IXYS IXFA14N60P Polarhv hiperfet power mosfet Datasheet

IXFA14N60P
IXFP14N60P
IXFH14N60P
PolarHVTM HiperFET
Power MOSFET
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
= 600V
= 14A
Ω
≤ 550mΩ
≤ 200ns
TO-263
G
S
(TAB)
TO-220
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C RGS = 1MΩ
600
600
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
14
42
A
A
IA
EAS
TC = 25°C
TC = 25°C
14
900
A
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 150°C
10
V/ns
PD
TC = 25°C
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
(TO-220 & TO-247)
1.13 / 10
(TO-263)
10..65 / 2.2..14.6
Nmlb.in.
N/lb.
2.5
3.0
6.0
g
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Md
FC
Mounting Torque
Mounting Force
Weight
TO-263
TO-220
TO-247
G
TO-247
G
BVDSS
VGS = 0V, ID = 250μA
600
VGS(th)
VDS = VGS, ID = 2.5mA
3.0
z
z
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2008 IXYS CORPORATION, All rights reserved
z
V
5 μA
500 μA
450
International standard packages
Avalanche rated
Easy to mount
Space savings
High power density
Applications:
± 100 nA
TJ = 125°C
D = Drain
TAB = Drain
Advantages
z
V
5.5
(TAB)
S
Features
z
Characteristic Values
Min.
Typ.
Max.
D
G = Gate
S = Source
z
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
(TAB)
D S
z
z
z
z
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
550 mΩ
DS99389F(12/08)
IXFA14N60P
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
gfs
7
VDS= 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25
Qgd
13
S
2500
pF
215
pF
13
pF
23
ns
27
ns
70
ns
26
ns
36
nC
16
nC
12
nC
TO-220 (IXFP) Outline
Pins:
1 - Gate
2 - Drain
0.42 °C/W
RthJC
RthCH
IXFP14N60P
IXFH14N60P
(TO-220)
0.50
°C/W
(TO-247)
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
14
A
ISM
Repetitive, pulse width limited by TJM
42
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
IRM
QRM
IF = 14A, -di/dt = 100A/μs
200
ns
A
nC
6.0
0.6
VR = 100V, VGS = 0V
TO-247 (IXFH) Outline
1
2
3
∅P
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-263 (IXFA) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFA14N60P
Fig. 1. Output Characteristics
@ 25ºC
IXFP14N60P
IXFH14N60P
Fig. 2. Extended Output Characteristics
@ 25ºC
30
14
VGS = 10V
9V
12
VGS = 10V
9V
27
24
21
ID - Amperes
ID - Amperes
10
8V
8
6
18
8V
15
12
9
4
7V
6
2
3
0
7V
0
0
1
2
3
4
5
6
7
8
0
3
6
9
15
18
21
24
27
30
Fig. 4. RDS(on) Normalized to ID = 7A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
14
3.2
VGS = 10V
8V
VGS = 10V
2.8
RDS(on) - Normalized
12
10
ID - Amperes
12
VDS - Volts
VDS - Volts
7V
8
6
4
2.4
I D = 14A
2.0
I D = 7A
1.6
1.2
0.8
2
6V
0.4
0
0
2
4
6
8
10
12
14
16
-50
18
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 7A Value
vs. Drain Current
50
75
100
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
16
3.4
VGS = 10V
14
3.0
TJ = 125ºC
12
2.6
ID - Amperes
RDS(on) - Normalized
25
TJ - Degrees Centigrade
2.2
1.8
1.4
TJ = 25ºC
10
8
6
4
1.0
2
0
0.6
0
3
6
9
12
15
18
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
21
24
27
30
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
IXYS REF: F_14N60P(5J)12-22-08-G
IXFA14N60P
Fig. 8. Transconductance
Fig. 7. Input Admittance
50
27
45
24
40
21
g f s - Siemens
ID - Amperes
35
TJ = 125ºC
25ºC
- 40ºC
30
25
IXFP14N60P
IXFH14N60P
20
TJ = - 40ºC
25ºC
125ºC
18
15
12
9
15
10
6
5
3
0
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
0
5
10
15
VGS - Volts
20
25
30
35
40
45
50
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
50
10
45
9
VDS = 300V
40
8
35
7
VGS - Volts
IS - Amperes
I D = 7A
30
25
TJ = 125ºC
20
I G = 10mA
6
5
4
3
15
2
TJ = 25ºC
10
5
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
4
8
VSD - Volts
12
16
20
24
28
32
36
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100
10,000
RDS(on) Limit
Ciss
1,000
100
ID - Amperes
Capacitance - PicoFarads
f = 1 MHz
Coss
25µs
100µs
10
1ms
10ms
10
TJ = 150ºC
Crss
TC = 25ºC
DC
Single Pulse
1
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
VDS - Volts
1000
IXFA14N60P
IXFP14N60P
IXFH14N60P
Fig. 13. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1.00
0.10
0.01
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: F_14N60P(5J)12-22-08-G
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