IXYS IXFA76N15T2 Trencht2 hiperfet power mosfet Datasheet

Advance Technical Information
IXFA76N15T2
IXFP76N15T2
TrenchT2TM HiperFETTM
Power MOSFET
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrnsic Rectifier
= 150V
= 76A
Ω
≤ 20mΩ
TO-263 AA (IXFA)
G
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
150
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
150
V
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
ID25
TC = 25°C
IDM
TC = 25°C, Pulse Width Limited by TJM
D (TAB)
76
A
200
A
IA
TC = 25°C
38
A
EAS
TC = 25°C
500
mJ
dV/dt
IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C
15
V/ns
PD
TC = 25°C
350
W
-55 ... +175
°C
TJ
TO-220AB (IXFP)
G
G = Gate
S = Source
TJM
175
°C
z
-55 ... +175
°C
z
300
260
°C
°C
1.13 / 10
Nm/lb.in.
2.5
3.0
g
g
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Md
Mounting Torque (TO-220)
Weight
TO-263
TO-220
z
z
z
z
z
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
150
VGS(th)
VDS = VGS, ID = 250μA
2.5
IGSS
VGS = ± 20V, VDS = 0V
±200 nA
IDSS
VDS = VDSS, VGS = 0V
5 μA
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
z
V
4.5
V
750 μA
20 mΩ
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Fast Intrinsic Rectifier
Dynamic dV/dt Rated
Low RDS(on)
Easy to Mount
Space Savings
High Power Density
Applications
z
z
z
z
z
z
z
© 2009 IXYS CORPORATION, All Rights Reserved
D
= Drain
TAB = Drain
Advantages
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
D (TAB)
Features
Tstg
TL
Tsold
DS
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS100176(08/09)
IXFA76N15T2
IXFP76N15T2
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min. Typ.
Max.
VDS = 10V, ID = 0.5 • ID25, Note 1
50
Ciss
Coss
80
S
5800
pF
490
pF
85
pF
17
ns
19
ns
25
ns
14
ns
97
nC
29
nC
30
nC
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.43 °C/W
RthJC
RthCH
TO-263 (IXFA) Outline
TO-220
°C/W
0.50
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, Pulse width limited by TJM
VSD
IF = 38A, VGS = 0V, Note 1
trr
IF = 38A, VGS = 0V
IRM
QRM
-di/dt = 100A/μs
VR = 75V
76
A
300
A
1.5
V
69
ns
5.7
A
197
nC
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Bottom
Side
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
TO-220 (IXFP) Outline
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFA76N15T2
IXFP76N15T2
Fig. 2. Extended Output Characteristics
@ 25ºC
Fig. 1. Output Characteristics
@ 25ºC
240
80
VGS = 15V
10V
VGS = 15V
10V
70
200
8V
160
7V
50
40
ID - Amperes
ID - Amperes
60
6V
30
7V
120
80
6V
20
40
10
5V
5V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
2
4
6
8
80
14
16
18
20
22
24
3.4
VGS = 15V
10V
7V
70
VGS = 10V
3.0
60
2.6
R DS(on) - Normalized
ID - Amperes
12
Fig. 4. RDS(on) Normalized to ID = 38A Value vs.
Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
6V
50
40
30
5V
20
I D = 76A
2.2
I D = 38A
1.8
1.4
1.0
10
0.6
4V
0
0.2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-50
-25
0
VDS - Volts
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 38A Value vs.
Drain Current
Fig. 6. Drain Current vs. Case Temperature
80
4.6
VGS = 10V
4.2
70
TJ = 175ºC
3.8
60
3.4
ID - Amperes
R DS(on) - Normalized
10
VDS - Volts
VDS - Volts
3.0
2.6
2.2
1.8
TJ = 25ºC
50
40
30
20
1.4
10
1.0
0.6
0
0
20
40
60
80
100
120
140
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
160
180
200
220
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
175
IXFA76N15T2
IXFP76N15T2
Fig. 7. Input Admittance
Fig. 8. Transconductance
140
140
120
120
TJ = - 40ºC
TJ = 150ºC
25ºC
- 40ºC
100
g f s - Siemens
ID - Amperes
100
80
60
25ºC
80
150ºC
60
40
40
20
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
7.0
20
40
60
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
100
120
140
160
Fig. 10. Gate Charge
10
240
VDS = 75V
9
200
I D = 38A
8
I G = 10mA
7
160
TJ = 150ºC
120
VGS - Volts
IS - Amperes
80
ID - Amperes
TJ = 25ºC
80
6
5
4
3
2
40
1
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
10
20
30
40
Fig. 11. Capacitance
60
70
80
90
100
Fig. 12. Forward-Bias Safe Operating Area
10,000
1,000.0
RDS(on) Limit
Ciss
25µs
100.0
1,000
ID - Amperes
Capacitance - PicoFarads
50
QG - NanoCoulombs
VSD - Volts
Coss
100µs
10.0
100
1ms
1.0
Crss
10ms
TJ = 175ºC
TC = 25ºC
Single Pulse
f = 1 MHz
DC
0.1
10
0
5
10
15
20
25
30
35
40
VDS - Volts
1
10
100
1000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_76N15T2(4V)7-02-09
IXFA76N15T2
IXFP76N15T2
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
22
22
RG = 5Ω
21
RG = 5Ω
VGS = 10V
t r - Nanoseconds
VDS = 75V
t r - Nanoseconds
VGS = 10V
21
20
19
18
I
D
= 152A
I
D
= 76A
VDS = 75V
20
TJ = 125ºC
TJ = 25ºC
19
18
17
17
16
25
35
45
55
65
75
85
95
105
115
30
125
40
50
60
70
80
TJ - Degrees Centigrade
22
20
16.0
19
15.5
16
I D = 76A, 152A
17
16
10
12
14
16
18
tf
14.5
24
14.0
22
I D = 76A, 152A
15
13.5
14
13.0
20
25
20
tf
td(off) - - - -
35
45
55
65
75
85
95
105
15
17
32
16
30
15
28
TJ = 125ºC
14
26
TJ = 25ºC
13
24
12
11
60
70
80
90
100
110 120
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
130
140 150
115
18
125
30
tf
td(off) - - - -
29
TJ = 125ºC, VGS = 10V
VDS = 75V
28
14
27
I D = 152A
13
I
D
26
= 76A
12
25
22
11
24
20
160
10
23
4
6
8
10
12
RG - Ohms
14
16
18
20
t d(off) - Nanoseconds
VDS = 75V
34
t d(off) - Nanoseconds
t f - Nanoseconds
26
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
RG = 5Ω, VGS = 10V
50
160
15.0
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
16
150
28
TJ - Degrees Centigrade
17
40
td(off) - - - -
RG - Ohms
18
30
t f - Nanoseconds
17
8
140
VDS = 75V
t f - Nanoseconds
t r - Nanoseconds
19
6
130
t d(off) - Nanoseconds
18
t d(on) - Nanoseconds
20
4
120
RG = 5Ω, VGS = 10V
VDS = 75V
18
110
30
td(on) - - - -
TJ = 125ºC, VGS = 10V
21
100
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
tr
90
ID - Amperes
IXFA76N15T2
IXFP76N15T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Z (th)JC - ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_76N15T2(4V)7-02-09
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