Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 28N50F VDSS IXFT 28N50F ID25 RDS(on) = 500V = 28A Ω = 190mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 28 112 28 A A A EAR EAS TC = 25°C TC = 25°C 35 1.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 315 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C (TAB) TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque TO-247 1.13/10 Nm/lb.in. TO-247 TO-268 Weight 6 4 Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 2.0 IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2002 IXYS All rights reserved g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 4.0 V ±100 nA TJ = 125°C 50 µA 1.5 mA TO-268 (IXFT) Case Style G (TAB) S G = Gate, S = Source, D = Drain, TAB = Drain Features l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l Space savings l High power density 190 mΩ 98883 (1/02) IXFH 28N50F IXFT 28N50F Symbol Test Conditions 18 S 3000 pF 500 pF Crss 130 pF td(on) 15 ns gfs V DS = 10 V; ID = 0.5 ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 12 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 13 ns td(off) RG = 2.0 Ω (External) 41 ns 8 ns 95 nC 20 nC 38 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.39 RthJC RthCK (TO-247) Source-Drain Diode Symbol Test Conditions IS V GS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 28 A 112 A 1.5 V 250 ns 1 2 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 3 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline trr QRM K/W TO-247 AD Outline IF = IS,-di/dt = 100 A/µs, VR = 100 V 1.0 µC 12 A IRM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Dim. Min Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1