IXYS IXFH340N075T2 Trencht2 hiperfet power mosfet Datasheet

Advance Technical Information
IXFH340N075T2
IXFT340N075T2
TrenchT2TM HiPerFETTM
Power MOSFET
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXFH)
G
Symbol
Test Conditions
VDSS
TJ = 25°C to 175°C
75
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
75
V
VGSM
Transient
± 20
V
ID25
TC = 25°C (Chip Capability)
340
A
Maximum Ratings
ILRMS
Lead Current Limit, RMS
160
A
IDM
TC = 25°C, Pulse Width Limited by TJM
850
A
IA
TC = 25°C
170
A
EAS
TC = 25°C
960
mJ
PD
TC = 25°C
935
W
-55 ... +175
°C
TJM
175
°C
Tstg
-55 ... +175
°C
300
260
°C
°C
1.13 / 10
Nm/lb.in.
6
4
g
g
TJ
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Md
Mounting Torque (TO-247)
Weight
TO-247
TO-268
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
75
VGS(th)
VDS = VGS, ID = 3mA
2.0
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
= 75V
= 340A
Ω
≤ 3.2mΩ
VGS = 10V, ID = 100A, Note 1
© 2009 IXYS CORPORATION, All Rights Reserved
D
D (TAB)
S
TO-268 (IXFT)
G
S
D (TAB)
G = Gate
S = Source
D
= Drain
TAB = Drain
Features
z
International Standard Packages
175°C Operating Temperature
z
High Current Handling Capability
z
Avalanche Rated
z
Fast Intrinsic Diode
z
Low RDS(on)
z
Advantages
z
V
4.0
V
±200
nA
25
μA
1.5 mA
3.2 mΩ
z
z
Easy to Mount
Space Savings
High Power Density
Applications
z
z
z
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching Applications
DS100194(9/09)
IXFH340N075T2
IXFT340N075T2
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 10V, ID = 60A, Note 1
65
110
S
19
nF
2230
pF
490
pF
1.7
Ω
26
ns
50
ns
60
ns
35
ns
300
nC
68
nC
70
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
td(off)
RG = 1Ω (External)
tf
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.16 °C/W
RthJC
RthCH
TO-247 (IXFH) Outline
TO-247
°C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IF = 170A, VGS = 0V
IRM
QRM
75
-di/dt = 100A/μs
VR = 37.5V
340
A
1360
A
1.3
V
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXFT) Outline
ns
4.4
A
165
nC
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFH340N075T2
IXFT340N075T2
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ T J = 25ºC
@ T J = 25ºC
400
350
VGS = 15V
10V
9V
8V
300
7V
300
250
7V
200
ID - Amperes
ID - Amperes
VGS = 15V
10V
8V
350
6V
150
250
6V
200
150
5V
5V
100
100
50
50
4V
0
4V
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.0
1.0
0.5
1.0
1.5
VDS - Volts
Fig. 3. Output Characteristics
2.5
3.0
3.5
4.0
4.5
Fig. 4. RDS(on) Normalized to ID = 170A Value vs.
Junction Temperature
@ T J = 150ºC
350
2.4
VGS = 15V
10V
9V
8V
VGS = 10V
2.2
2.0
7V
250
R DS(on) - Normalized
300
ID - Amperes
2.0
VDS - Volts
6V
200
150
5V
100
I D = 340A
1.8
1.6
I D = 170A
1.4
1.2
1.0
50
0.8
4V
0.6
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
2.0
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 170A Value vs.
Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.4
180
2.2
160
External Lead Current Limit
140
TJ = 175ºC
120
1.8
1.6
ID - Amperes
R DS(on) - Normalized
2.0
VGS = 10V
15V - - - - -
1.4
1.2
100
80
60
TJ = 25ºC
1.0
40
0.8
20
0.6
0
0
40
80
120
160
200
240
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
280
320
360
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXFH340N075T2
IXFT340N075T2
Fig. 7. Input Admittance
Fig. 8. Transconductance
240
200
TJ = - 40ºC
180
200
160
g f s - Siemens
ID - Amperes
140
120
100
80
TJ = 150ºC
25ºC
- 40ºC
60
25ºC
160
150ºC
120
80
40
40
20
0
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
20
40
60
80
VGS - Volts
100
120
140
160
180
200
220
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
300
VDS = 37.5V
9
250
I D = 170A
8
I G = 10mA
VGS - Volts
IS - Amperes
7
200
150
TJ = 150ºC
100
6
5
4
3
TJ = 25ºC
50
2
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
50
100
VSD - Volts
Fig. 11. Capacitance
200
250
300
Fig. 12. Forward-Bias Safe Operating Area
1,000
100,000
RDS(on) Limit
f = 1 MHz
25µs
Ciss
10,000
Coss
1,000
External Lead Current Limit
100
100µs
ID - Amperes
Capacitance - PicoFarads
150
QG - NanoCoulombs
100ms
1ms
DC
10
TJ = 175ºC
Crss
10ms
TC = 25ºC
Single Pulse
100
1
0
5
10
15
20
25
30
35
40
VDS - Volts
1
10
100
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_340N075T2(V8)9-15-09
IXFH340N075T2
IXFT340N075T2
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
70
RG = 1Ω , VGS = 10V
RG = 1Ω , VGS = 10V
VDS = 37.5V
65
VDS = 37.5V
65
t r - Nanoseconds
t r - Nanoseconds
TJ = 125ºC
60
I
D
= 200A
55
50
I
D
= 100A
60
55
50
TJ = 25ºC
45
45
40
100
40
25
35
45
55
65
75
85
95
105
115
125
110
120
130
140
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
90
td(on) - - - -
TJ = 125ºC , VGS = 10V
80
45
70
40
60
200
50
I D = 100A
150
40
7
8
9
10
11
12
13
14
75
25
15
35
45
55
RG - Ohms
65
TJ = 25ºC, 125ºC
28
60
24
55
150
115
50
125
160
170
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
180
190
tf
50
200
td(off) - - - -
360
320
VDS = 37.5V
350
280
300
240
250
200
I D = 200A
200
160
I D = 100A
150
120
100
80
50
40
0
0
1
2
3
4
5
6
7
8
9
RG - Ohms
10
11
12
13
14
15
t d(off) - Nanoseconds
70
140
105
TJ = 125ºC , VGS = 10V
400
75
36
130
95
400
450
80
t d(off) - Nanoseconds
VDS = 37.5V
40
t f - Nanoseconds
td(off) - - - -
RG = 1Ω , VGS = 10V
t f - Nanoseconds
tf
44
120
85
500
85
110
75
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
48
20
100
65
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
32
70
I D = 100A, 200A
55
10
6
80
60
10
5
VDS = 37.5V
20
15
4
85
RG = 1Ω , VGS = 10V
65
20
0
td(off) - - - -
25
50
3
200
90
tf
30
30
2
190
35
100
1
180
t d(off) - Nanoseconds
250
t d(on) - Nanoseconds
t r - Nanoseconds
I D = 200A
VDS = 37.5V
300
170
50
t f - Nanoseconds
350
160
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
400
tr
150
ID - Amperes
IXFH340N075T2
IXFT340N075T2
Fig. 19. Maximum Transient Thermal Impedance
1.00
Fig. 19. Maximum Transient Thermal Impedance
afaf
0.20
Z (th)JC - ºC / W
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_340N075T2(V8)9-15-09
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