IXYS IXFH42N20 Hiperfet power mosfet Datasheet

HiPerFETTM
Power MOSFETs
VDSS
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
ID25
200 V
200 V
200 V
RDS(on)
42 A 60mW
50 A 45mW
58 A 40mW
trr £ 200 ns
TO-247 AD (IXFH)
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
200
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
200
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
IDM
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
42
50
58
168
200
232
42
50
58
A
A
A
A
A
A
A
A
A
30
mJ
5
V/ns
300
W
EAR
TC = 25°C
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
PD
TC = 25°C
42N20
50N20
58N20
42N20
50N20
58N20
42N20
50N20
58N20
-55 ... +150
°C
150
°C
Tstg
-55 ... +150
°C
300
°C
TJ
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
VDSS
VGS = 0 V, ID = 250 mA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
200
2
TJ = 25°C
TJ = 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
TO-268 (D3) Case Style
G
TJM
Symbol
(TAB)
Maximum Ratings
V
4
V
±100
nA
200
1
mA
mA
S
TO-204 AE (IXFM)
(TAB)
S
D
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
91522H (2/98)
1-4
IXFH/IXFM42N20
IXFH/IXFM50N20
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Min.
IXFH/IXFM58N20 IXFT50N20
IXFT58N20
Characteristic Values
Typ.
Max.
0.060 W
0.045 W
0.040 W
RDS(on)
42N20
50N20
58N20
Pulse test, t £ 300 ms, duty cycle d £ 2 %
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
C iss
Coss
C rss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
R G = 1 W (External)
18
15
72
16
25
20
90
25
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
190
35
95
220
50
110
(TO-247 and TO-204 Case styles)
0.25
Qg(on)
Qgs
Qgd
RthJC
RthCK
VGS = 10 V, ID = 0.5 ID25
Source-Drain Diode
20
32
S
4400
800
285
pF
pF
pF
0.780 0.800
0.819 0.845
nC
nC
nC
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
0.42 K/W
K/W
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
IS
VGS = 0 V
42N20
50N20
58N20
42
50
58
A
A
A
ISM
Repetitive;
pulse width limited by TJM
42N20
50N20
58N20
168
200
232
A
A
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
200
300
ns
ns
QRM
IRM
TO-268AA (D3 PAK)
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
1.5
2.6
mC
mC
TJ = 25°C
TJ = 125°C
19
23
A
A
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
19.81 20.32
20.80 21.46
Test Conditions
IF = 25A,
-di/dt = 100 A/ms,
VR = 100 V
Dim. Millimeter
Min. Max.
A
B
Symbol
t rr
TO-247 AD (IXFH) Outline
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
TO-204 AE (IXFM) Outline
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
Millimeter
Min. Max.
38.61 39.12
- 22.22
6.40 11.40
1.45 1.60
1.52 3.43
30.15 BSC
10.67 11.17
5.21 5.71
16.64 17.14
11.18 12.19
3.84 4.19
25.16 26.66
Inches
Min. Max.
1.520 1.540
- 0.875
0.252 0.449
0.057 0.063
0.060 0.135
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.050
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXFH/IXFM42N20
IXFH/IXFM50N20
Fig. 1 Output Characteristics
100
Fig. 2 Input Admittance
90
9V
8V
7V
70
80
ID - Amperes
80
ID - Amperes
100
VGS = 10V
TJ = 25°C
90
IXFH/IXFM58N20 IXFT50N20
IXFT58N20
6V
60
50
40
30
5V
20
70
TJ = 25°C
60
50
40
30
20
10
10
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
VDS - Volts
4
5
6
7
8
9
10
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.6
2.25
RDS(on) - Normalized
RDS(on) - Normalized
2.4
2.2
2.0
1.8
1.6
1.4
VGS = 10V
1.2
VGS = 15V
1.0
25
50
75
100
125
1.75
ID = 25A
1.50
1.25
1.00
0.75
0.8
0
2.00
150
0.50
-50
175
-25
0
ID - Amperes
1.2
70
1.1
BV/VG(th) - Normalized
ID - Amperes
VGS(th)
58N20
50N20
42N20
40
30
20
100 125 150
BVDSS
1.0
0.9
0.8
0.7
0.6
10
0
-50
75
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
80
50
50
TJ - Degrees C
Fig. 5 Drain Current vs.
Case Temperature
60
25
-25
0
25
50
75
TC - Degrees C
© 2000 IXYS All rights reserved
100 125 150
0.5
-50
-25
0
25
50
75
100 125 150
TJ - Degrees C
3-4
IXFH/IXFM42N20
IXFH/IXFM50N20
IXFH/IXFM58N20 IXFT50N20
IXFT58N20
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
14 VDS = 100V
ID = 50A
10
ID - Amperes
VGE - Volts
10µs
100 Limited by R
DS(on)
12 I = 10mA
G
8
6
100µs
1ms
10
10ms
4
100ms
2
0
1
0
25
50
75
100 125 150 175 200
1
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
4500
50
40
3500
f = 1MHz
VDS = 25V
3000
ID - Amperes
Capacitance - pF
Fig.10 Source Current vs. Source
to Drain Voltage
Ciss
4000
100 200
10
2500
2000
1500
Coss
1000
0
0
5
10
20
TJ = 25°C
10
Crss
500
TJ = 125°C
30
15
20
0
0.4
25
0.6
VDS - Volts
0.8
1.0
1.2
1.4
VSD - Volts
Thermal Response - K/W
Fig.11 Transient Thermal Impedance
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
4-4
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