IXYS IXFH5N100P Polar power mosfet hiperfet Datasheet

Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
IXFA5N100P
IXFH5N100P
IXFP5N100P
VDSS
ID25
= 1000V
= 5A
≤ 2.8Ω
Ω
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-263 (IXFA)
G
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
5
A
IDM
TC = 25°C, pulse width limited by TJM
10
A
IA
TC = 25°C
5
A
EAS
TC = 25°C
300
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
PD
TC = 25°C
250
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
TL
1.6mm (0.062) from case for 10s
300
°C
TSOLD
Plastic body for 10s
260
°C
Md
Mounting torque
1.13 / 10
Nm/lb.in.
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
(TO-220,TO-247)
G
G
VGS = 0V, ID = 250μA
1000
VGS(th)
VDS = VGS, ID = 250μA
3.0
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
z
z
z
z
V
±100 nA
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
10 μA
750 μA
2.8
Ω
z
D = Drain
TAB = Drain
International standard packages
Dynamic dv/dt Rating
Avalanche Rated
Low RDS(ON), rugged PolarTM process
Low QG
Low Drain-to-Tab capacitance
Low package inductance
Easy to mount
Space savings
Applications:
z
z
z
z
z
z
© 2008 IXYS CORPORATION, All rights reserved
(TAB)
Advantages
V
6.0
DS
Features
z
BVDSS
(TAB)
S
G = Gate
S = Source
z
Characteristic Values
Min. Typ.
Max.
D
TO-220 (IXFP)
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
(TAB)
TO-247 (IXFH)
z
RDS(on)
S
Maximum Ratings
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
Uninterrupted power supplies
AC motor control
High speed power switching
applications
DS99923(07/08)
IXFA5N100P IXFH5N100P
IXFP5N100P
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
2.4
RGi
Gate input resistance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
tr
td(off)
tf
Qgs
Ω
pF
20
pF
12
ns
13
ns
30
ns
37
ns
33.4
nC
10.6
nC
14.4
nC
RG = 5Ω (External)
Qgd
1.6
pF
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
S
113
Resistive Switching Times
Qg(on)
4.0
1830
Crss
td(on)
(TO-220)
(TO-247)
Symbol
Test Conditions
IS
VGS = 0V
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
ISM
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
5
A
Repetitive, pulse width limited by TJM
20
A
VSD
IF = IS, VGS = 0V, Note 1
1.3
V
trr
IF = 5A, VGS = 0V
200
ns
QRM
e
°C/W
°C/W
0.50
0.25
Source-Drain Diode
IRM
∅P
0.50 °C/W
RthJC
RthCS
RthCS
TO-247 (IXFH) Outline
-di/dt = 100A/μs
VR = 100V
7.4
A
0.43
μC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-220 (IXFP) Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-263 (IXFA) Outline
Pins:
1 - Gate
2 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXFA5N100P IXFH5N100P
IXFP5N100P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
8
5.0
VGS = 10V
8V
4.5
VGS = 10V
9V
8V
7
4.0
6
7V
ID - Amperes
ID - Amperes
3.5
3.0
2.5
2.0
5
7V
4
3
1.5
2
6V
1.0
6V
1
0.5
5V
0.0
0
0
2
4
6
8
10
12
14
0
5
10
VDS - Volts
20
25
30
Fig. 4. RDS(on) Normalized to ID = 2.5A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
5.0
2.8
VGS = 10V
8V
4.5
VGS = 10V
2.4
RDS(on) - Normalized
4.0
7V
3.5
ID - Amperes
15
VDS - Volts
3.0
2.5
2.0
6V
1.5
1.0
2.0
I D = 5A
I D = 2.5A
1.6
1.2
0.8
5V
0.5
0.0
0.4
0
3
6
9
12
15
18
21
24
27
30
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 2.5A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
5.5
2.6
VGS = 10V
2.4
5.0
TJ = 125ºC
4.5
4.0
2.0
ID - Amperes
RDS(on) - Normalized
2.2
1.8
1.6
1.4
3.5
3.0
2.5
2.0
1.5
1.2
1.0
TJ = 25ºC
1.0
0.5
0.8
0.0
0
1
2
3
4
5
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
6
7
8
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFA5N100P IXFH5N100P
IXFP5N100P
Fig. 7. Input Admittance
6.0
4.0
5.5
TJ = 125ºC
25ºC
- 40ºC
3.5
TJ = - 40ºC
5.0
25ºC
4.5
3.0
g f s - Siemens
ID - Amperes
Fig. 8. Transconductance
4.5
2.5
2.0
1.5
4.0
125ºC
3.5
3.0
2.5
2.0
1.5
1.0
1.0
0.5
0.5
0.0
0.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0.0
0.5
1.0
VGS - Volts
1.5
2.0
2.5
3.0
3.5
4.0
4.5
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
10
14
9
VDS = 500V
8
I G = 10mA
I D = 2.5A
12
VGS - Volts
IS - Amperes
7
10
8
6
TJ = 125ºC
5
4
3
TJ = 25ºC
4
6
2
2
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1.2
4
VSD - Volts
8
12
16
20
24
28
32
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1.00
Ciss
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
Coss
100
0.10
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_5N100P(55-744)6-27-08
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