IXYS IXFH76N07-12 Hiperfet power mosfet Datasheet

HiPerFETTM
Power MOSFETs
IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on)
60 V
60 V
70 V
70 V
76 A
76 A
76 A
76 A
11 mW
12 mW
11 mW
12 mW
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
VDGR
TJ = 25°C to 175°C; RGS = 10 kW
N06
N07
N06
N07
60
70
60
70
V
V
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID119
IDM
IAR
TC
TC
TC
TC
76
76
304
100
A
A
A
A
EAR
EAS
TC = 25°C
30
2
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
= 25°C (Chip capability = 125 A)
= 119°C, limited by external leads
= 25°C, pulse width limited by TJM
= 25°C
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
(TAB)
G = Gate,
S = Source,
360
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300
°C
●
●
●
●
●
6
g
Applications
●
Test Conditions
VDSS
VGS = 0 V, ID = 250 mA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 40 A
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
N06
N07
60
70
2.0
TJ = 25°C
TJ = 125°C
3.4
V
V
V
±100
nA
100
500
mA
mA
11
12
mW
mW
●
●
●
●
●
●
IXYS reserves the right to change limits, test conditions, and dimensions.
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
●
76 N06/N07-11
76 N06/N07-12
Pulse test, t £ 300 ms, duty cycle d £ 2 %
© 2000 IXYS All rights reserved
International standard package
JEDEC TO-247 AD
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
1.15/10 Nm/lb.in.
Weight
Symbol
D = Drain,
TAB = Drain
Features
●
TC = 25°C
TJ
TJM
Tstg
TO-247 AD
●
●
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
92785H (12/98)
1-4
IXFH 76 N06-11
IXFH 76 N06-12
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 40 A, pulse test
40
S
4400
pF
2000
pF
C rss
1200
pF
td(on)
40
ns
70
ns
130
ns
55
ns
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 50 V, ID = 30 A
td(off)
RG = 1 W (External)
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 40 A
Qgd
30
nC
30
nC
120
nC
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
K/W
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
0.42
0.25
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
76
A
Repetitive; pulse width limited by TJM
304
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
t rr
IF = 25 A, -di/dt = 100 A/ms, TJ = 25°C
VR = 25 V
TJ = 125°C
250
ns
ns
© 2000 IXYS All rights reserved
TO-247 AD (IXFH) Outline
240
RthJC
RthCK
IXFH 76 N07-11
IXFH 76 N07-12
150
Dim. Millimeter
Min. Max.
Inches
Min. Max.
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXFH 76 N06-11
IXFH 76 N06-12
Fig. 2 Input Admittance
Fig.1 Output Characteristics
80
ID - Amperes
300
VGS=10V
9V
8V
TJ = 25°C
90
7V
6V
250
70
60
50
5V
40
30
ID - Amperes
100
IXFH 76 N07-11
IXFH 76 N07-12
20
TJ=25°C
200
TJ=150°C
150
TJ=100°C
100
50
10
0
0
0.0
0.5
1.0
1.5
2.0
2
4
6
Fig. 3 Rds(on) vs. Drain Current
12
Fig. 4 RDS(ON) Temperature Dependence
2.25
1.4
TJ = 25°C
ID = 38A
VGS = 10V
2.00
RDS(ON) - Normalized
1.3
RDS(ON) - Normalized
10
VGS - Volts
VDS - Volts
1.2
VGS = 10V
1.1
1.0
VGS = 15V
0.9
1.75
1.50
1.25
1.00
0.75
0.50
-50 -25
0.8
0
50
100
150
200
250
300
0
Fig. 5 ID vs. Case Temperature
50
75 100 125 150 175
Fig. 6 Transconductance
90
Transconductance - Siemens
80
80
70
60
50
40
30
20
10
0
-50
25
TJ - Degrees C
ID - Amperes
ID - Amperes
8
VGS=10V
TJ = 25°C
70
60
TJ = 100°C
50
40
TJ = 150°C
30
20
10
0
-25
0
25
50
75
100 125 150
Case Temperature - °C
© 2000 IXYS All rights reserved
0
50
100
150
200
250
300
ID - Amperes
3-4
IXFH 76 N06-11
IXFH 76 N06-12
Fig. 8 Forward Bias Safe Operating Area
Fig. 7 Gate Charge
16
1000
14
Limited by Rds(on)
ID - Amperes
VDS = 40V
ID = 38A
IG = 1mA
12
VGS - Volts
IXFH 76 N07-11
IXFH 76 N07-12
10
8
6
10ms
100ms
100
1ms
10ms
10
100ms
DC
4
2
TC = 25°C
0
1
0
50
100
150
200
250
300
350
1
10
Gate Charge - nCoulombs
100
VDS - Volts
Fig. 10 Source Current vs.
Source to Drain Voltage
Fig. 9 Capacitance Curves
6000
200
f = 1MHz
TJ =150°C
150
Ciss
4000
ID - Amperes
Capacitance - pF
5000
3000
Coss
2000
TJ =25° C
TJ =150°C
50
Crss
1000
100
TJ =100°C
0
0
10
20
30
0
0.0
40
0.5
VDS - Volts
1.0
1.5
2.0
VSD - Volts
Thermal Response - K/W
Fig. 11 Transient Thermal Impedance
D=0.5
0.100
D=0.2
D=0.1
0.010
D=0.05
D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
4-4
Similar pages