IXYS IXFH80N085 Hiperfettm power mosfet Datasheet

HiPerFETTM
Power MOSFETs
IXFH 80N085
IXFT 80N085
VDSS = 85 V
= 80 A
ID25
RDS(on) = 9 mW
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
trr £ 200 ns
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
85
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
85
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
80
A
IL(RMS)
Lead current limit
IDM
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
EAR
TC = 25°C
75
A
320
A
80
A
50
mJ
2.5
J
5
V/ns
300
W
-55 to +150
°C
TJM
150
°C
Tstg
-55 to +150
°C
300
°C
1.13/10
Nm/lb.in.
6
4
g
g
EAS
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
PD
TC = 25°C
TJ
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
(TAB)
S
G = Gate
D
= Drain
S = Source TAB = Drain
Features
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
VDSS
VGS = 0 V, ID = 1 mA
85
VGS(th)
VDS = VGS, ID = 4 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
TJ = 25°C
TJ = 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
4.0
V
±100
nA
50
1
mA
mA
9
mW
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
switching (UIS)
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
98709 (03/24/00)
1-2
IXFH 80N085
IXFT 80N085
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25, pulse test
35
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
55
S
4800
pF
1675
pF
590
pF
TO-247 AD (IXFH) Outline
50
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
75
ns
td(off)
RG = 4.7 W (External),
95
ns
31
ns
180
nC
42
nC
75
nC
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
K/W
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
0.42
(TO-247)
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
80
A
Repetitive; pulse width limited by TJM
320
A
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
200
ns
mC
A
IF = 25A, -di/dt = 100 A/ms, VR = 100 V
TO-268AA (D3 PAK)
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
0.5
6
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Dim. Millimeter
Min. Max.
Inches
Min. Max.
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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