IXYS IXFH90N20Q Hiperfettm power mosfets q-class Datasheet

Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFX 90N20Q
IXFK 90N20Q
VDSS
ID25
=
=
=
200 V
90 A
Ω
22 mΩ
Q-CLASS
RDS(on)
Single MOSFET Die
trr ≤ 200 µs
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low trr
PLUS 247TM (IXFX)
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
300
300
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
73
292
73
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
500
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
G
Maximum Ratings
(TAB)
D
TO-264 AA (IXFK)
G
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
TO-264
0.4/6
PLUS 247
TO-264
Weight
6
10
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 4mA
300
2.0
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
© 2000 IXYS All rights reserved
Nm/lb.in.
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
4.0 V
±100 nA
TJ = 125°C
100 µA
2 mA
22 mΩ
D
G = Gate
S = Source
(TAB)
S
D = Drain
TAB = Drain
Features
l
IXYS advanced low Qg process
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
l
Low RDS (on)
l
Rated for unclamped Inductive load
switching (UIS) rated
l
Molding epoxies meet UL 94 V-0
flammability classification
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
Advantages
PLUS 247TM package for clip or spring
mounting
l
Space savings
l
High power density
l
98676A (03/24/00)
IXFK 90N20Q
IXFX 90N20Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 ID25
Note 1
40
Ciss
S
6800
pF
1620
pF
Crss
480
pF
td(on)
35
ns
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
50
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
31
ns
td(off)
RG = 1 Ω (External),
82
ns
12
ns
190
nC
40
nC
90
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.26
RthJC
0.15
RthCK
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
trr
QRM
K/W
IF = 45A,-di/dt = 100 A/µs, VR = 100 V
IRM
90
A
360
A
1.3
V
200
ns
1.4
µC
10
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
Similar pages