IXYS IXFK16N90Q Hiperfet power mosfets q-class Datasheet

Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFH 16N90Q
IXFK 16N90Q
IXFT 16N90Q
Q-Class
VDSS
= 900 V
=
16 A
ID25
RDS(on) = 0.65 W
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
900
900
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
16
64
16
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
TJ
TJM
Tstg
360
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
G
D
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
TO-247
TO-264
Weight
TO-247
TO-268
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6
4
10
G = Gate
S = Source
D (TAB)
S
TAB = Drain
g
g
g
Features
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 mA
900
VGS(th)
VDS = VGS, ID = 4 mA
3.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V
5.0
V
±200
nA
TJ = 25°C
TJ = 125°C
50
2
mA
mA
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.65
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
W
• IXYS advanced low Qg process
• International standard packages
• Epoxy meet UL 94 V-0, flammability
classification
• Low RDS (on) low Qg
• Avalanche energy and current rated
• Fast intrinsic rectifier
Advantages
• Easy to mount
• Space savings
• High power density
98668 (11/99)
1-2
IXFH 16N90Q IXFK 16N90Q
IXFT 16N90Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
10
17
S
4000
pF
430
pF
C rss
155
pF
td(on)
21
ns
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
24
ns
td(off)
RG = 2.0 W (External),
56
ns
14
tf
Qg(on)
Qgs
133
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
ns
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
nC
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
67
nC
0.25
0.15
Inches
Min. Max.
A
B
nC
0.35
TO-247
TO-264
Dim. Millimeter
Min. Max.
25
RthJC
RthCK
170
TO-247 AD (IXFH) Outline
K/W
K/W
K/W
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
TO-264 AA (IXFK) Outline
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
16
A
ISM
Repetitive; pulse width limited by TJM
60
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
250
ns
mC
A
t rr
QRM
IRM
1
8
IF = IS -di/dt = 100 A/ms, VR = 100 V
TO-268AA (IXFT) (D3 PAK)
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
BSC
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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