IXYS IXFK220N15P Polar power mosfet hiperfet Datasheet

PolarTM Power MOSFET
HiperFETTM
IXFK220N15P
IXFX220N15P
VDSS
ID25
=
=
≤
≤
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
150V
220A
Ω
9mΩ
200ns
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
150
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
150
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C (Chip Capability)
220
A
ILRMS
IDM
Leads Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
160
600
A
A
IA
TC = 25°C
50
A
EAS
TC = 25°C
3
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
20
V/ns
PD
TC = 25°C
1250
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
20..120 /4.5..27
N/lb.
10
6
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque (TO-264)
FC
Mounting Force
Weight
TO-264
PLUS247
(PLUS247)
G
D
S
Tab
PLUS247 (IXFX)
G
D
Tab
S
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z
z
z
z
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
z
z
z
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
150
VGS(th)
VDS = VGS, ID = 8mA
2.5
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
DC-DC Converters
Battery Chargers
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC Choppers
z
AC and DC Motor Drives
z
Uninterrupted Power Supplies
z
High Speed Power Switching
Applications
z
z
TJ = 150°C
© 2011 IXYS CORPORATION, All Rights Reserved
V
4.5
V
±200
nA
50 μA
1.5 mA
9 mΩ
DS100017A(01/11)
IXFK220N15P
IXFX220N15P
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
50
VDS = 10V, ID = 60A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
85
S
15.4
nF
3040
pF
35
pF
35
ns
28
ns
56
ns
17
ns
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
162
nC
58
nC
56
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.12 °C/W
RthJC
RthCS
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
220
A
ISM
Repetitive, Pulse Width Limited by TJM
800
A
VSD
IF = 110A, VGS = 0V, Note 1
1.4
V
trr
QRM
IRM
IF = 110A, -di/dt = 150A/μs
Note
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Dim.
Qg(on)
Qgs
TO-264 Outline
1.32
18.8
VR = 75V, VGS = 0V
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
Inches
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247TM Outline
200 ns
μC
A
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFK220N15P
IXFX220N15P
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
220
350
VGS = 15V
10V
9V
200
180
160
8V
250
ID - Amperes
ID - Amperes
VGS = 15V
10V
9V
300
140
120
7V
100
80
8V
200
150
7V
100
60
6V
40
50
20
6V
5V
0
5V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
1
2
3
4
6
7
8
9
10
Fig. 4. RDS(on) Normalized to ID = 110A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 150ºC
220
3.2
VGS = 15V
10V
9V
8V
200
180
VGS = 10V
2.8
R DS(on) - Normalized
160
ID - Amperes
5
VDS - Volts
VDS - Volts
140
7V
120
100
6V
80
60
40
I D = 220A
2.0
I D = 110A
1.6
1.2
0.8
5V
20
2.4
0
0.4
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
VDS - Volts
25
50
75
100
125
150
175
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 110A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
180
3.2
External Lead Current Limit
VGS = 10V
15V - - - - -
140
TJ = 175ºC
2.4
ID - Amperes
R DS(on) - Normalized
2.8
160
2.0
1.6
120
100
80
60
40
TJ = 25ºC
1.2
20
0.8
0
0
50
100
150
200
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
250
300
350
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
IXFK220N15P
IXFX220N15P
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
140
TJ = - 40ºC
180
120
160
TJ = 150ºC
25ºC
- 40ºC
120
g f s - Siemens
ID - Amperes
25ºC
100
140
100
80
60
80
150ºC
60
40
40
20
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
20
40
60
80
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
120
140
160
180
200
Fig. 10. Gate Charge
10
350
VDS = 75V
9
300
I D = 110A
8
250
I G = 10mA
7
VGS - Volts
IS - Amperes
100
ID - Amperes
200
150
TJ = 150ºC
100
6
5
4
3
2
TJ = 25ºC
50
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
1.5
20
40
60
VSD - Volts
80
100
120
140
160
180
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
1,000
f = 1 MHz
RDS(on) Limit
25µs
10,000
100µs
100
Coss
1,000
External Lead Limit
ID - Amperes
Capacitance - PicoFarads
Cisss
1ms
10
100
TJ = 175ºC
Crss
TC = 25ºC
Single Pulse
10
10ms
DC
100ms
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10
100
VDS - Volts
1000
IXFK220N15P
IXFX220N15P
Fig. 13. Maximum Transient Thermal Impedance
1
Z (th )JC - ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_220N15P(93)01-07-11-A
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