IXYS IXFK32N50Q Hiperfet power mosfets q-class Datasheet

VDSS
IXFK 32N50Q
IXFX 32N50Q
HiPerFETTM
Power MOSFETs
Q-Class
trr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
IDM
32
120
A
A
IAR
TC = 25°C
TC = 25°C,
pulse width limited by TJM
TC = 25°C
32
A
EAR
TC = 25°C
45
mJ
1500
mJ
5
V/ns
416
W
-55 ... + 150
150
-55 ... + 150
°C
°C
°C
300
°C
1.13/10
Nm/lb.in.
6
4
g
g
EAS
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
PLUS 247TM
(IXFX)
G
G
G = Gate
S = Source
VDSS
VGS = 0 V, ID = 250 uA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
© 2004 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
500
2.5
z
z
TJ = 25°C
TJ = 125°C
z
z
V
4.5
V
±100
nA
100
1
µA
mA
0.16
Ω
D
(TAB)
S
D = Drain
TAB = Drain
Features
z
Test Conditions
(TAB)
D
TO-264 AA (IXFK)
z
Symbol
RDS(on)
500 V 32 A 0.16 Ω
500 V 32 A 0.16 Ω
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
dv/dt
ID25
IXYS advanced low Qg process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low RDS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
z
z
PLUS 247TM package for clip or spring
mounting
Space savings
High power density
DS98604E(01/04)
IXFK 32N50Q
IXFX 32N50Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25
Note 1
28
S
3950
pF
640
pF
Crss
210
pF
td(on)
35
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
18
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
42
ns
td(off)
RG = 2 Ω (External),
75
ns
20
ns
150
nC
26
nC
85
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.3
RthCK
0.15
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
t rr
QRM
K/W
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
IRM
32
A
128
A
1.5
V
250
ns
0.75
µC
7.5
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXFK 32N50Q
IXFX 32N50Q
Figure 1. Output Characteristics at 25OC
80
TJ = 125OC
6V
50
40
30
20
30
5V
20
4V
0
0
4
8
12
16
0
20
0
4
8
VDS - Volts
16
20
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
2.8
2.8
VGS = 10V
VGS = 10V
2.4
RDS(ON) - Normalized
RDS(ON) - Normalized
12
VDS - Volts
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
Tj=1250 C
2.0
1.6
Tj=250 C
1.2
0
10
20
30
40
50
2.4
ID = 32A
2.0
1.2
0.8
25
60
ID = 16A
1.6
50
Figure 5. Drain Current vs. Case Temperature
32
40
ID - Amperes
50
24
16
8
-50
0
25
50
75
TC - Degrees C
© 2004 IXYS All rights reserved
125
150
30
20
100 125 150
0
TJ = 25oC
TJ = 125oC
10
-25
100
Figure 6. Admittance Curves
40
0
75
TJ - Degrees C
ID - Amperes
ID - Amperes
6V
10
5V
10
0.8
VGS= 9V
8V
7V
40
ID - Amperes
60
ID - Amperes
50
VGS=10V
9V
8V
7V
TJ = 25OC
70
Figure 2. Output Characteristics at 125OC
2
3
4
VGS - Volts
5
6
IXFK 32N50Q
IXFX 32N50Q
Figure 7. Gate Charge
Figure 8. Capacitance Curves
14
10000
Vds=300V
ID=16A
IG=10mA
VGS - Volts
10
F = 1MHz
Ciss
Capacitance - pF
12
8
6
4
Coss
1000
Crss
2
0
0
50
100
150
200
100
250
0
Gate Charge - nC
5
10
15
20
25
VDS - Volts
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
100
VGS= 0V
ID - Amperes
80
60
TJ=125OC
40
20
TJ=25OC
0
0.4
0.6
0.8
1.0
1.2
VSD - Volts
Figure 10. Transient Thermal Resistance
0.40
R(th)JC - K/W
0.20
0.10
0.08
0.06
0.04
0.02
0.01
10-3
10-2
10-1
100
101
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
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