IXYS IXFK64N60P N-channel enhancement mode avalanche rated fast intrinsic diode Datasheet

PolarHVTM HiPerFET
Power MOSFET
IXFK 64N60P
IXFX 64N60P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
VDSS
TJ = 25° C to 150° C
600
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
600
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25° C
64
A
IDM
TC = 25° C, pulse width limited by TJM
150
A
IAR
TC = 25° C
64
A
EAR
TC = 25° C
80
mJ
EAS
TC = 25° C
3.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 2 Ω
20
V/ns
PD
TC = 25° C
1040
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
600
64
96
200
V
A
Ω
mΩ
ns
Maximum Ratings
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
FC
Mounting force (PLUS247)
Md
Mounting torque (TO-264)
Weight
TO-264
PLUS247
300
260
°C
°C
20..120/4.5..25
N/lb
1.13/10 Nm/lb.in.
10
6
g
g
TO-264 (IXFK)
G
D
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 3 mA
600
VGS(th)
VDS = VGS, ID = 8 mA
3.0
IGSS
V
5.0
V
VGS = ±30 VDC, VDS = 0
±200
nA
IDSS
VDS = VDSS
VGS = 0 V
25
1000
µA
µA
(TAB)
G = Gate
S = Source
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
96
mΩ
D = Drain
Tab = Drain
Features
l
l
l
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
TJ = 125° C
(TAB)
S
PLUS247 (IXFX)
l
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
© 2006 IXYS All rights reserved
=
=
≤
≤
l
l
Easy to mount
Space savings
High power density
DS99442E(01/06)
IXFK 64N60P
IXFX 64N60P
Symbol
Test Conditions
gfs
VDS = 20 V; ID = 0.5 ID25, Note 1
40
63
S
12
nF
1150
pF
80
pF
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
Crss
td(on)
28
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
23
ns
td(off)
RG = 1 Ω (External)
79
ns
24
ns
200
nC
70
nC
68
nC
tf
Qg(on)
Qgs
PLUS 247TM Outline
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
0.12 ° C/W
RthJC
° C/W
0.15
RthCS
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
64
A
ISM
Repetitive
150
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
IRM
VR = 100V
0.6
6.0
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 Outline
µC
A
Notes:
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFK 64N60P
IXFX 64N60P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
65
160
V GS = 10V
8V
7V
60
55
V GS = 10V
8V
140
50
120
I D - Amperes
I D - Amperes
45
40
35
30
6V
25
7V
100
80
60
20
6V
40
15
10
20
5V
5
5V
0
0
0
1
2
3
4
5
6
7
0
2
4
6
65
12
14
16
18
20
3.1
V GS = 10V
7V
60
55
V GS = 10V
2.8
2.5
R DS(on) - Normalized
50
45
I D - Amperes
10
Fig. 4. R DS(on) Normalized to ID = 32A v s.
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
6V
40
35
30
25
20
5V
15
2.2
I D = 64A
1.9
1.6
I D = 32A
1.3
1
10
0.7
5
0
0.4
0
2
4
6
8
10
12
-50
14
-25
V DS - Volts
0
25
50
75
100
125
150
T J - Degrees Centigrade
Fig. 5. R DS(on) Normalized to ID = 32A v s.
Drain Current
Fig. 6. Maximum Drain Current v s.
Case Temperature
70
3.2
3
V GS = 10V
TJ = 125ºC
2.8
60
2.6
50
2.4
I D - Amperes
R DS(on) - Normalized
8
V DS - Volts
V DS - Volts
2.2
2
1.8
40
30
1.6
20
1.4
TJ = 25ºC
1.2
10
1
0.8
0
0
20
40
60
80
I D - Amperes
© 2006 IXYS All rights reserved
100
120
140
160
-50
-25
0
25
50
75
T J - Degrees Centigrade
100
125
150
IXFK 64N60P
IXFX 64N60P
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
130
120
90
110
80
100
g f s - Siemens
I D - Amperes
70
60
50
TJ = 125ºC
25ºC
- 40ºC
40
90
80
TJ = - 40ºC
25ºC
125ºC
70
60
50
40
30
30
20
20
10
10
0
0
3.5
4
4.5
5
5.5
6
6.5
7
0
10
20
30
V GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
50
70
80
90
100
160
180
200
Fig. 10. Gate Charge
V DS = 300V
9
120
I D = 32A
8
100
I G = 10mA
V GS - Volts
7
80
60
TJ = 125ºC
6
5
4
3
40
TJ = 25ºC
2
20
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
1.2
20
40
V SD - Volts
60
80
100
120
140
Q G - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
1,000
f = 1 MHz
TJ = 150ºC
TC = 25ºC
C iss
Capacitance - PicoFarads
60
10
140
I S - Amperes
40
I D - Amperes
RDS(on) Limit
I D - Amperes
10,000
1,000
C oss
100
25µs
100µ
1ms
10
100
DC
10ms
C rss
10
1
0
5
10
15
20
25
30
35
40
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V DS - Volts
1000
Fig. 13. Maximum Transient Thermal Resistance
R (th)JC - ºC / W
1.000
0.100
0.010
0.001
0.0001
0.001
0.01
Pulse W idth - Seconds
© 2006 IXYS All rights reserved
0.1
1
10
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