IXYS IXFK66N50Q2 Hiperfet power mosfets q2-class Datasheet

HiPerFETTM
Power MOSFETs
Q2-Class
IXFK66N50Q2
IXFX66N50Q2
VDSS
ID25
= 500V
= 66A
Ω
≤ 80mΩ
≤ 250ns
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
500
500
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
66
264
A
A
IA
EAS
TC = 25°C
TC = 25°C
66
4
A
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
735
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Md
Mounting torque
(IXFK)
1.13/10
Nm/lb.in.
FC
Mounting force
(IXFX)
20..120 /4.5..27
N/lb.
Weight
TO-264
PLUS247
10
6
g
g
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
500
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2008 IXYS CORPORATION,All rights reserved
TJ = 125°C
V
5.5
V
± 200
nA
25
3
μA
mA
80
mΩ
G
D
(TAB)
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Double metal process for low gate
resistance
• International standard packages
• Epoxy meet UL 94 V-0, flammability
classification
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
DS98983B(5/08)
IXFK66N50Q2
IXFX66N50Q2
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS= 10V, ID = 0.5 • ID25, Note 1
30
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
TO-264 (IXFK) Outline
44
S
9125
pF
1200
pF
318
pF
Crss
td(on)
Resistive Switching Times
32
ns
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
16
ns
td(off)
RG = 1Ω (External)
60
ns
10
ns
200
nC
47
nC
98
nC
tf
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.17
RthCS
Symbol
Test Conditions
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
°C/W
0.15
Source-Drain Diode
°C/W
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
66
A
Repetitive, pulse width limited by TJM
264
A
IF = IS, VGS = 0V, Note 1
1.5
V
250
ns
μC
A
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1
10
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247TM (IXFX) Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFK66N50Q2
IXFX66N50Q2
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25° C
@ 25° C
70
160
VGS = 10V
VGS = 10V
140
8V
7V
6V
I D - Amperes
50
40
5.5V
30
20
5V
10
8V
120
I D - Amperes
60
4.5V
0
100
7V
80
60
40
6V
20
5V
0
0
1
2
3
4
5
6
7
0
2
4
6
V D S - Volts
12
14
16
18
20
Fig. 4. RDS(on) Normalized to 0.5 I D25 Value
vs. Junction Temperature
@ 125° C
70
3.0
VGS = 10V
60
R D S ( o n ) - Normalized
7V
50
I D - Amperes
10
V D S - Volts
Fig. 3. Output Characteristics
6V
40
5V
30
20
4.5V
10
3.5V
0
2.8
2.6
2.4
VGS = 10V
2.2
2.0
1.8
I D = 66A
1.6
1.4
1.2
I D = 33A
1.0
0.8
0.6
0.4
0
2
4
6
8
10
12
14
-50
-25
0
VD S - Volts
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to 0.5 I D25 Value
Fig. 6. Drain Current vs. Case
Temperature
vs. I D
70
3.0
2.8
60
VGS = 10V
2.6
TJ = 125 °C
2.4
50
I D - Amperes
R D S ( o n ) - Normalized
8
2.2
2.0
1.8
1.6
40
30
20
1.4
1.2
10
TJ = 25°C
1.0
0.8
0
0
20
40
60
I
D
80
100
- Amperes
© 2008 IXYS CORPORATION,All rights reserved
120
140
160
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
IXFK66N50Q2
IXFX66N50Q2
Fig. 8. Transconductance
100
90
90
80
80
70
70
60
TJ = 125°C
50
25°C
40
- 40°C
g f s - Siemens
I D - Amperes
Fig. 7. Input Admittance
30
TJ = - 40 °C
25°C
60
125°C
50
40
30
20
20
10
10
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
7.0
20
40
V G S - Volts
80
100
120
140
D - Amperes
Fig. 10. Gate Charge
180
10
160
9
VDS = 250V
140
8
ID = 33A
7
IG = 10m A
120
VG S - Volts
I S - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
100
80
60
60
I
TJ = 125 °C
6
5
4
3
40
2
TJ = 25°C
20
1
0
0
0.4
0.5
0.6
0.7
0.8
VS
D
0.9
1.0
1.1
1.2
1.3
0
20
40
- Volts
60
Q
80
G
100 120 140 160 180 200
- nanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100000
1000
RDS(on) Limit
Ciss
I D - Amperes
Capacitance - picoFarads
f = 1MHz
10000
Coss
1000
100
25µs
100µs
1ms
10m s
10
TJ = 150ºC
DC
TC = 25ºC
Crss
Single Pulse
1
100
0
5
10
15
20
25
30
35
40
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
VD S - Volts
1000
IXFK66N50Q2
IXFX66N50Q2
Fig. 13. Maximum Transient Thermal Impedance
Z ( t h ) J C - ºC / W
1.00
0.10
0.01
0.00
0.1
1
10
100
1000
10000
Pulse Width - milliseconds
© 2008 IXYS CORPORATION,All rights reserved
IXYS REF: F_66N50Q2(94)5-28-08-C
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