IXYS IXFK80N50Q3 Hiperfet power mosfets q3-class Datasheet

Advance Technical Information
IXFK80N50Q3
IXFX80N50Q3
HiperFETTM
Power MOSFETs
Q3-Class
VDSS
ID25
=
=
≤
≤
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
500V
80A
Ω
65mΩ
250ns
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
500
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
IDM
TC = 25°C, Pulse Width Limited by TJM
IA
G
D
S
Tab
PLUS247 (IXFX)
80
A
240
A
TC = 25°C
80
A
EAS
TC = 25°C
5
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
50
V/ns
PD
TC = 25°C
1250
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
z
1.13/10
Nm/lb.in.
z
20..120 /4.5..27
N/lb.
z
10
6
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque (TO-264)
FC
Mounting Force
Weight
TO-264
PLUS247
(PLUS247)
G
z
VGS = 0V, ID = 3mA
500
VGS(th)
VDS = VGS, ID = 8mA
3.5
IGSS
VGS = ±30V, VDS = 0V
±200 nA
IDSS
VDS = VDSS, VGS = 0V
50 μA
2 mA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
TJ = 125°C
© 2011 IXYS CORPORATION, All Rights Reserved
High Power Density
Easy to Mount
Space Savings
Applications
V
6.5
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
z
BVDSS
D = Drain
Tab = Drain
Features
z
Characteristic Values
Min.
Typ.
Max.
Tab
S
G = Gate
S = Source
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
D
V
z
z
z
z
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
65 mΩ
DS100299(02/11)
IXFK80N50Q3
IXFX80N50Q3
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
35
VDS = 20V, ID = 0.5 • ID25, Note 1
55
S
10
nF
1260
pF
115
pF
0.15
Ω
30
ns
20
ns
43
ns
Dim.
15
ns
200
nC
77
nC
90
nC
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
TO-264 AA Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.10 °C/W
RthJC
RthCS
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
Note
Characteristic Values
Min.
Typ.
Max.
80
A
Repetitive, Pulse Width Limited by TJM
320
A
IF = IS, VGS = 0V, Note 1
1.4
V
IF = 40A, -di/dt = 100A/μs
1.8
15.6
VR = 100V, VGS = 0V
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS 247TM Outline
250 ns
μC
A
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFK80N50Q3
IXFX80N50Q3
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
80
180
VGS = 10V
VGS = 10V
160
70
60
140
9V
ID - Amperes
ID - Amperes
120
50
40
30
8V
9V
100
80
60
20
40
10
8V
20
7V
7V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
25
30
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
80
3.4
VGS = 10V
9V
70
R DS(on) - Normalized
50
8V
40
30
20
VGS = 10V
3.0
60
ID - Amperes
20
VDS - Volts
VDS - Volts
2.6
I D = 80A
2.2
I D = 40A
1.8
1.4
1.0
7V
10
0.6
6V
0
0.2
0
2
4
6
8
10
12
-50
-25
0
VDS - Volts
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 40A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.0
90
VGS = 10V
2.8
80
TJ = 125ºC
2.6
60
2.2
ID - Amperes
R DS(on) - Normalized
70
2.4
2.0
1.8
1.6
50
40
30
1.4
20
TJ = 25ºC
1.2
10
1.0
0.8
0
0
20
40
60
80
100
120
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
140
160
180
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFK80N50Q3
IXFX80N50Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
120
100
TJ = - 40ºC
100
80
25ºC
g f s - Siemens
ID - Amperes
80
TJ = 125ºC
25ºC
- 40ºC
60
60
125ºC
40
40
20
20
0
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0
20
40
VGS - Volts
60
80
100
120
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
240
16
VDS = 250V
14
I D = 40A
200
I G = 10mA
160
VGS - Volts
IS - Amperes
12
120
10
8
6
80
TJ = 125ºC
4
TJ = 25ºC
40
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
40
VSD - Volts
80
120
160
200
240
280
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1000
100,000
f = 1 MHz
100µs
100
10,000
ID - Amperes
Capacitance - PicoFarads
RDS(on) Limit
Ciss
1,000
Coss
100
10
1
TJ = 150ºC
Crss
TC = 25ºC
Single Pulse
10
1ms
0.1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFK80N50Q3
IXFX80N50Q3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
aaaaa
0.2
Z(th)JC - ºC / W
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_80N50Q3(Q8)02-18-11
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