IXYS IXFM10N90 Hiperfet power mosfet Datasheet

HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFM 10 N90
IXFH/IXFM 12 N90
IXFH13 N90
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
900
900
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
IDM
TC = 25°C,
pulse width limited by TJM
IAR
TC = 25°C
10
12
13
40
48
13
10
12
13
A
A
A
A
A
A
A
A
A
EAR
TC = 25°C
30
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
10N90
12N90
13N90
10N90
12N90
13N90
10N90
12N90
13N90
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Symbol
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
VDSS
VGS(th)
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
900
2.0
RDS(on)
900 V
900 V
900 V
10 A
12 A
13 A
1.1 W
0.9 W
0.8 W
4.5
V
V
±100
nA
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
G
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
l
l
l
l
l
l
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
l
l
l
l
l
l
l
TJ = 25°C
TJ = 125°C
10N90
12N90
13N90
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
ID25
trr £ 250 ns
Symbol
TJ
TJM
Tstg
VDSS
25
1
mA
mA
1.1
0.9
0.8
W
W
W
l
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
l
l
l
91530G (3/98)
1-4
IXFH 10N90 IXFH 12N90 IXFH 13N90
IXFM 10N90 IXFM 12N90
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
6
12
S
4200
pF
315
pF
90
pF
TO-247 AD (IXFH) Outline
18
50
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
12
50
ns
td(off)
RG = 2 W (External)
51
100
ns
18
50
ns
123
155
nC
27
45
nC
49
80
nC
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
K/W
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.42
RthCK
0.25
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
10N90
12N90
13N90
10
12
13
A
A
A
ISM
Repetitive;
pulse width limited by TJM
10N90
12N90
13N90
40
48
52
A
A
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
TJ = 25°C
TJ = 125°C
250
400
ns
ns
t rr
QRM
IF = IS
-di/dt = 100 A/ms,
VR = 100 V
IRM
TJ = 25°C
TJ = 125°C
1
2
mC
mC
TJ = 25°C
TJ = 125°C
10
15
A
A
Dim. Millimeter
Min. Max.
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
TO-204 AA (IXFM) Outline
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
© 2000 IXYS All rights reserved
Inches
Min. Max.
Millimeter
Min. Max.
38.61 39.12
19.43 19.94
6.40 9.14
0.97 1.09
1.53 2.92
30.15 BSC
10.67 11.17
5.21 5.71
16.64 17.14
11.18 12.19
3.84 4.19
25.16 25.90
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
1.520 1.540
- 0.785
0.252 0.360
0.038 0.043
0.060 0.115
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.020
2-4
IXFH 10N90 IXFH 12N90 IXFH 13N90
IXFM 10N90 IXFM 12N90
Fig. 1 Output Characteristics
20
TJ = 25°C
18
Fig. 2 Input Admittance
20
VGS = 10V
18
7V
16
6V
14
ID - Amperes
ID - Amperes
16
12
10
8
6
5V
14
12
TJ = 25°C
10
8
6
4
4
2
2
0
0
0
5
10
15
20
0
1
2
3
VDS - Volts
6
7
8
9
10
Fig. 4 Temperature Dependence
of Drain to Source Resistance
1.5
2.50
TJ = 25°C
2.25
RDS(on) - Normalized
1.4
RDS(on) - Normalized
5
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.3
1.2
VGS = 10V
1.1
VGS = 15V
1.0
2.00
1.75
1.50
ID = 6A
1.25
1.00
0.75
0.9
0
5
10
15
20
0.50
-50
25
-25
0
ID - Amperes
50
75
100 125 150
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
20
VGS(th)
18
BVDSS
1.1
14
BV/VG(th) - Normalized
16
12N90
12
10
10N90
8
6
4
1.0
0.9
0.8
0.7
0.6
2
0
-50
25
TJ - Degrees C
Fig. 5 Drain Current vs.
Case Temperature
ID - Amperes
4
-25
0
25
50
75
TC - Degrees C
© 2000 IXYS All rights reserved
100 125 150
0.5
-50
-25
0
25
50
75
100 125 150
TJ - Degrees C
3-4
IXFH 10N90 IXFH 12N90 IXFH 13N90
IXFM 10N90 IXFM 12N90
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
10
ID - Amperes
8
VGE - Volts
10µs
VDS = 450V
ID = 13A
IG = 10mA
6
4
100µs
10 Limited by RDS(on)
1ms
10ms
1
100ms
2
0
0.1
0
25
50
75
100
125
150
1
10
100
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
Fig.10Source Current vs. Source
to Drain Voltage
4500
18
Ciss
4000
16
3500
14
3000
ID - Amperes
Capacitance - pF
1000
f = 1 MHz
VDS = 25V
2500
2000
1500
1000
0
5
10
8
TJ = 125°C
6
TJ = 25°C
2
Crss
0
10
4
Coss
500
12
15
20
0
0.0
25
0.2
VCE - Volts
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
1
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4-4
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