IXYS IXFM13N80 Hiperfet power mosfet Datasheet

HiPerFETTM
Power MOSFETs
VDSS
IXFH/IXFM 11 N80
IXFH/IXFM 13 N80
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
800
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
800
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
11N80
13N80
11
13
A
A
IDM
TC = 25°C, pulse width limited by TJM
11N80
13N80
44
52
A
A
IAR
TC = 25°C
11N80
13N80
11
13
A
A
EAR
TC = 25°C
30
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
PD
TC = 25°C
TJ
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
VDSS
VGS(th)
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
800
2.0
TJ = 25°C
TJ = 125°C
11N80
13N80
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
4.5
V
V
±100
nA
250
1
mA
mA
0.95
0.80
W
W
ID25
RDS(on)
800 V 11 A
800 V 13 A
trr £ 250 ns
0.95 W
0.80 W
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
D
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
91528F(7/97)
1-4
IXFH 11N80
IXFM 11N80
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
8
14
S
4200
pF
360
pF
100
pF
IXFH 13N80
IXFM 13N80
TO-247 AD (IXFH) Outline
20
50
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
33
50
ns
td(off)
RG = 2 W (External)
63
100
ns
32
50
ns
128
155
nC
30
45
nC
55
80
nC
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
K/W
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.42
RthCK
0.25
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
11N80
13N80
11
13
A
A
ISM
Repetitive;
pulse width limited by TJM
11N80
13N80
44
52
A
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
TJ = 25°C
TJ = 125°C
250
400
ns
ns
t rr
QRM
IF = IS
-di/dt = 100 A/ms,
VR = 100 V
IRM
1
mC
8.5
A
Dim. Millimeter
Min. Max.
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
TO-204 AA (IXFM) Outline
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
© 2000 IXYS All rights reserved
Inches
Min. Max.
Millimeter
Min. Max.
38.61 39.12
19.43 19.94
6.40 9.14
0.97 1.09
1.53 2.92
30.15 BSC
10.67 11.17
5.21 5.71
16.64 17.14
11.18 12.19
3.84 4.19
25.16 25.90
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
1.520 1.540
- 0.785
0.252 0.360
0.038 0.043
0.060 0.115
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.020
2-4
IXFH 11N80
IXFM 11N80
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
18
18
TJ = 25°C
16
8V
10
8
6
VDS = 10V
14
VGS = 10V
12
ID - Amperes
ID - Amperes
TJ = 25°C
16
14
7V
12
10
8
6
4
4
2
2
0
0
0
2
4
6
8
10
12
0
1
2
3
VDS - Volts
1.40
6
7
8
9
10
2.50
2.25
RDS(on) - Normalized
1.30
RDS(on) - Ohms
5
Fig. 4 Temperature Dependence
of Drain to Source Resistance
TJ = 25°C
1.35
4
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.25
1.20
VGS = 10V
1.15
1.10
VGS = 15V
1.05
1.00
2.00
1.75
1.50
ID = 6.5A
1.25
1.00
0.75
0.95
0.90
0
2
4
6
0.50
-50
8 10 12 14 16 18 20 22 24 26
-25
0
Fig. 5 Drain Current vs.
Case Temperature
1.2
16
1.1
BV/VG(th) - Normalized
13N80
11N80
8
6
4
100
125
150
BVDSS
1.0
0.9
0.8
0.7
0.6
2
0
-50
75
VGS(th)
12
10
50
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
18
14
25
TJ - Degrees C
ID - Amperes
ID - Amperes
IXFH 13N80
IXFM 13N80
-25
0
25
50
75
TC - Degrees C
© 2000 IXYS All rights reserved
100
125
150
0.5
-50
-25
0
25
50
75
100
125
150
TJ - Degrees C
3-4
IXFH 11N80
IXFM 11N80
Fig.7 Gate Charge Characteristic Curve
IXFH 13N80
IXFM 13N80
Fig.8 Forward Bias Safe Operating Area
10
10µs
100µs
ID - Amperes
8
VGE - Volts
Limited by RDS(on)
VDS = 400V
ID = 13A
IG = 10mA
6
4
10
1ms
10ms
1
100ms
2
0
0.1
0
25
50
75
100
125
150
1
10
Gate Charge - nCoulombs
1000
VDS - Volts
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
4500
18
Ciss
4000
16
3500
14
3000
ID - Amperes
Capacitance - pF
100
f = 1 MHz
VDS = 25V
2500
2000
1500
1000
0
5
10
8
6
TJ = 125°C
TJ = 25°C
2
Crss
0
10
4
Coss
500
12
15
20
0
0.0
25
0.2
VCE - Volts
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
1
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4-4
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