PolarTM Power MOSFET HiPerFETTM IXFN36N110P VDSS = ID25 = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS VGSM 1100V 36A Ω 240mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 1100 1100 V V Continuous Transient ±30 ±40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 36 110 A A IAR TC = 25°C 18 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1000 W -55 ... +150 150 -55 ... +150 °C °C °C Features 300 °C • International standard package • Encapsulating epoxy meets 2500 3000 V~ V~ • miniBLOC with Aluminium nitride TJ TJM Tstg TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60Hz, RMS IISOL ≤ 1mA Md t = 1min t = 1s Mounting torque Terminal connection torque Weight 1.5/13 1.3/ 11.5 Nm/lb.in. Nm/lb.in. 30 g S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. UL 94 V-0, flammability classification isolation • Fast recovery diode • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) • Easy to mount • Space savings • High power density Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1100 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V Applications: 6.5 V ±300 nA z μA mA z TJ = 125°C 50 4 VGS = 10V, ID = 0.5 • ID25, Note 1 240 mΩ z z z © 2008 IXYS Corporation, All rights reserved High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99902A (04/08) IXFN36N110P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 20 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd SOT-227B Outline 32 S 23 nF 1240 pF 110 pF 0.85 Ω 60 ns 54 ns 94 ns 45 ns 350 nC 117 nC 157 nC 0.125 °C/W RthJC RthCS °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 36 A Repetitive, pulse width limited by TJM 144 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 20A, -di/dt = 100A/μs 2.3 16 VR= 100V, VGS = 0V μC A Notes1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN36N110P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 90 VGS = 10V 7V 35 70 30 60 25 ID - Amperes ID - Amperes VGS = 10V 8V 80 20 6V 15 10 7V 50 40 30 6V 20 5 5V 10 0 5V 0 0 1 2 3 4 5 6 7 8 9 0 5 10 VDS - Volts 40 25 30 3.0 VGS = 10V 8V 35 2.8 RDS(on) - Normalized 7V 25 VGS = 10V 2.6 30 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 18A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 20 15 6V 10 2.4 2.2 2.0 I D = 36A 1.8 1.6 I D = 18A 1.4 1.2 1.0 5 0.8 5V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 18A Value vs. Drain Current 40 2.6 VGS = 10V 2.4 TJ = 125ºC 35 2.2 30 2.0 ID - Amperes RDS(on) - Normalized 15 VDS - Volts 1.8 1.6 25 20 15 1.4 10 1.2 TJ = 25ºC 5 1.0 0 0.8 0 10 20 30 40 50 ID - Amperes © 2008 IXYS Corporation, All rights reserved 60 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN36N110P Fig. 7. Input Admittance Fig. 8. Transconductance 65 80 60 70 55 50 40 g f s - Siemens ID - Amperes 45 TJ = - 40ºC 60 TJ = 125ºC 25ºC - 40ºC 35 30 25 50 25ºC 40 125ºC 30 20 20 15 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 10 20 30 VGS - Volts 40 50 60 70 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 16 90 14 VDS = 550V I D = 18A 80 I G = 10mA 12 VGS - Volts IS - Amperes 70 60 50 40 10 8 6 TJ = 125ºC 30 4 20 TJ = 25ºC 2 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 VSD - Volts 200 250 300 350 400 450 500 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads 150 1,000 Coss 0.100 0.010 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_36N110P(99) 04-01-08-A