IXYS IXFN38N80Q2 Hiperfet power mosfets q2-class Datasheet

HiPerFETTM
Power MOSFETs
Q2-Class
IXFK38N80Q2
IXFN38N80Q2
IXFX38N80Q2
VDSS
ID25
= 800V
= 38A
Ω
≤ 220mΩ
≤ 250ns
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
800
800
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
38
150
A
A
IA
EAS
TC = 25°C
TC = 25°C
38
4
A
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
735
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
20..120 /4.5..27
N/lb.
10
6
30
g
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
t = 1min
t = 1s
Md
Mounting torque
(TO-264)
Terminal connection torque (SOT-227B)
FC
Mounting force
Weight
TO-264
PLUS247
SOT-227B
(PLUS247)
Symbol
Test Conditions
BVDSS
VGS = 0V, ID = 3mA
800
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2008 IXYS CORPORATION,All rights reserved
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
TJ = 125°C
V
5.5
V
± 200
nA
50
2
μA
mA
220
mΩ
G
D
(TAB)
S
PLUS247 (IXFX)
(TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
G = Gate
S = Source
D
= Drain
TAB = Drain
Features
• Double metal process for low gate
resistance
• International standard packages
• Epoxy meet UL 94 V-0, flammability
classification
• Avalanche energy and current rated
• Fast intrinsic Rectifier
• miniBLOCK package version with
Aluminum Nitrate isolation
Advantages
• Easy to mount
• Space savings
• High power density
DS99150B(5/08)
IXFK38N80Q2 IXFN38N80Q2
IXFX38N80Q2
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS= 10V, ID = 0.5 • ID25, Note 1
25
Ciss
Coss
TO-264 (IXFK) Outline
37
S
9500
pF
VGS = 0V, VDS = 25V, f = 1MHz
Crss
888
pF
185
pF
td(on)
Resistive Switching Times
20
ns
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
16
ns
td(off)
RG = 1Ω (External)
60
ns
12
ns
190
nC
44
nC
88
nC
tf
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.17
RthCS
Symbol
Test Conditions
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
°C/W
0.15
Source-Drain Diode
°C/W
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
38
A
Repetitive, pulse width limited by TJM
150
A
IF = IS, VGS = 0V, Note 1
1.5
V
250
ns
μC
A
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1
10
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247TM (IXFX) Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
SOT-227B Outline
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFK38N80Q2 IXFN38N80Q2
IXFX38N80Q2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
40
90
VGS = 10V
35
70
30
6V
25
20
I D - Amperes
I D - Amperes
VGS = 10V
7V
80
5.5V
15
10
60
6V
50
40
30
5.5V
20
5
5V
5V
10
0
0
0
1
2
3
4
5
6
7
8
9
10
0
3
6
9
Fig. 3. Output Characteristics
@ 125ºC
18
21
24
27
30
3.2
VGS = 10V
6V
VGS = 10V
2.8
R D S ( o n ) - Normalized
35
30
I D - Amperes
15
Fig. 4. RDS(on) Normalized to 0.5 I D25 Value
vs. Junction Temperature
40
5.5V
25
20
5V
15
10
2.4
ID = 38A
2.0
ID = 19A
1.6
1.2
0.8
5
0
0.4
0
2
4
6
8
10
12
14
16
18
-50
20
-25
0
25
50
75
100
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to 0.5 I D25 Value
Fig. 6. Drain Current vs. Case
Temperature
vs. I D
2.8
125
150
125
150
45
2.6
40
VGS = 10V
2.4
TJ = 125ºC
35
2.2
I D - Amperes
R D S ( o n ) - Normalized
12
VD S - Volts
V D S - Volts
2.0
1.8
1.6
1.4
30
25
20
15
10
1.2
5
TJ = 25ºC
1.0
0.8
0
0
10
20
30
I
40
D
50
- Amperes
© 2008 IXYS CORPORATION,All rights reserved
60
70
80
90
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
IXFK38N80Q2 IXFN38N80Q2
IXFX38N80Q2
Fig. 7. Input Admittance
Fig. 8. Transconductance
80
60
55
60
45
TJ = 125ºC
25ºC
- 40ºC
40
35
g f s - Siemens
I D - Amperes
TJ = - 40ºC
70
50
30
25
20
50
25ºC
40
125ºC
30
15
20
10
10
5
0
0
3.5
4.0
4.5
5.0
5.5
6.0
0
6.5
10
20
V G S - Volts
Fig. 9. Source Current vs.Source-To-Drain
Voltage
10
110
9
VDS = 400V
8
ID = 19A
100
40
50
60
70
- Amperes
IG = 10m A
7
80
VG S - Volts
I S - Amperes
90
70
60
50
6
5
4
3
TJ = 125ºC
30
D
Fig. 10. Gate Charge
120
40
30
I
2
TJ = 25ºC
20
1
10
0
0
0.4
0.5
0.6
0.7
0.8
VS
D
0.9
1.0
1.1
1.2
0
1.3
20
40
- Volts
60
80
100 120 140 160 180 200
QG - nanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100000
1000
RDS(on) Lim it
100µs
C iss
10000
I D - Amperes
Capacitance - picoFarads
f = 1MHz
C oss
1000
25µs
1ms
100
10ms
10
TJ = 150ºC
C rss
TC = 25ºC
Single Pulse
100
DC
1
0
5
10
15
20
25
30
35
40
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
VD S - Volts
1000
IXFK38N80Q2 IXFN38N80Q2
IXFX38N80Q2
Fig. 13. Maximum Transient Thermal Impedance
Z( t h ) J C - ºC / W
1.00
0.10
0.01
1
10
100
1000
Pulse Width - milliseconds
© 2008 IXYS CORPORATION,All rights reserved
IXYS REF: F_38N80Q2(94)5-28-08-A
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