IXYS IXFN44N50U3 Hiperfet power mosfet Datasheet

HiPerFETTM
Power MOSFETs
VDSS
IXFN44N50U2 IXFN44N50U3 500 V
IXFN48N50U2 IXFN48N50U3 500 V
Buck & Boost Configurations for
PFC & Motor Control Circuits
ID (cont)
RDS(on)
trr
0.12 W 35 ns
0.10 W 35 ns
44 A
48 A
3
3
4
2
2
Preliminary data
4
1
1
HiPerFET MOSFET
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
500
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
44N50
48N50
44
48
A
A
IDM
TC = 25°C,
pulse width limited by max. TJM
44N50
48N50
176
192
A
A
DIODE
1
2
4
IAR
TC = 25°C
24
A
EAR
Repetitive
30
mJ
dv/dt
IS £ IDM, -di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
520
W
600
V
60
A
VRRM
IFAVM
TC = 70°C; rectangular, d = 0.5
IFRM
tp <10 ms; pulse width limited by TJ
800
A
PD
TC = 25°C
180
W
-40 ... +150
150
-40 ... +150
°C
°C
°C
2500
3000
V~
V~
TJ
TJM
Tstg
CASE
miniBLOC, SOT-227 B
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t=1s
Md
Mounting torque
Terminal connection torque (M4)
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
3
Features
· Popular Buck & Boost circuit
topologies
· International standard package
miniBLOC SOT-227B
· Aluminium nitride isolation
- high power dissipation
· Isolation voltage 3000 V~
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low drain-to-case capacitance
(<60 pF)
- reduced RFI
· Ultra-fast FRED diode with soft
reverse recovery
Applications
· Power factor controls and buck
regulators
· DC servo and robotic drives
· DC choppers
· Switch reluctance motor controls
Advantages
· Easy to mount with 2 screws
· Space savings
· Tightly coupled FRED
96535B (7/00)
1-5
IXFN44N50U2
IXFN44N50U3
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1 mA
500
VGS(th)
VDS = VGS, ID = 8 mA
2
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Symbol
gfs
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
±200
nA
TJ = 25°C
TJ = 125°C
400
2
mA
mA
44N50
48N50
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.12
0.10
W
W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V, ID = 0.5 ID25, pulse test
22
miniBLOC, SOT-227 B
V
4
Test Conditions
IXFN48N50U2
IXFN48N50U3
M4 screws (4x) supplied
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
42
S
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
8400
pF
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
900
pF
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
C rss
280
pF
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
td(on)
30
ns
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
60
ns
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
100
ns
30
ns
270
nC
60
nC
Qgd
135
nC
RthJC
0.24
K/W
RthCK
0.05
K/W
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
td(off)
RG = 1 W (External)
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Ultra-fast Diode
Symbol
IR
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
200
mA
100
mA
TJ= 125°C; VR= 0.8VRRM
14
mA
IF = 70A, VGS = 0 V, TJ= 150°C
1.5
V
1.8
V
35
50
ns
19
21
A
TJ= 25°C; VR= VRRM
VR= 0.8VRRM
VF
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t rr
IRM
TJ= 25°C
II = 1A, di/dt = -200 A/ms, VR = 30 V, TJ = 25°C
IF= 60A, di/dt = -480 A/ms, VR = 350 V, TJ = 100°C
RthJC
RthJK
© 2000 IXYS All rights reserved
0.05
0.7 K/W
K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-5
IXFN44N50U2
IXFN44N50U3
Fig.1 Output Characteristics
100
100
90
6V
80
80
70
70
ID - Amperes
ID - Amperes
Fig.2 Input Admittance
7V
VGS = 10V
TJ = 25°C
90
60
50
40
5V
30
TJ = 25°C
60
50
40
30
20
20
10
10
0
0
0
5
10
15
20
25
30
35
0
1
2
3
VDS - Volts
5
6
7
8
9
10
Fig.4 Temperature Dependence
of Drain to Source Resistance
1.6
2.50
TJ = 25°C
2.25
1.4
1.3
VGS = 10V
1.2
VGS = 15V
1.1
RDS(on) - Normalized
1.5
RDS(on) - Normalized
4
VGS - Volts
Fig.3 RDS(on) vs. Drain Current
1.0
2.00
1.75
ID = 24A
1.50
1.25
1.00
0.75
0.9
0
0.50
-50
10 20 30 40 50 60 70 80 90 100
-25
0
ID - Amperes
1.2
48N50
44N50
30
20
10
0
-50
75
100 125 150
VGS(th)
BVDSS
1.1
BV/VG(th) - Normalized
40
50
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
60
50
25
TJ - Degrees C
Fig.5 Drain Current vs.
Case Temperature
ID - Amperes
IXFN48N50U2
IXFN48N50U3
1.0
0.9
0.8
0.7
0.6
-25
0
25
50
75
TC - Degrees C
© 2000 IXYS All rights reserved
100 125 150
0.5
-50
-25
0
25
50
75
100 125 150
TJ - Degrees C
3-5
IXFN44N50U2
IXFN44N50U3
Fig.7 Gate Charge Characteristic Curve
Fig.8 Capacitance Curves
10
10000
VDS = 250V
9
9000
ID = 24A
6
5
4
3
7000
5000
4000
3000
2000
1
1000
0
0
50
f = 1 MHz
VDS = 25V
6000
2
0
Ciss
8000
Capacitance - pF
8 I = 10mA
G
7
VGE - Volts
IXFN48N50U2
IXFN48N50U3
100 150 200 250 300 350 400
Coss
Crss
0
5
Gate Charge - nCoulombs
10
15
20
25
VDS - Volts
Fig.9 Source Current vs. Source
to Drain Voltage
100
90
ID - Amperes
80
70
60
50
TJ = 125°C
40
30
TJ = 25°C
20
10
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD - Volt
Thermal Response - K/W
Fig.10 Transient Thermal Impedance
0.1
0.01
0.001
0.01
0.1
1
Time - Seconds
© 2000 IXYS All rights reserved
4-5
IXFN44N50U2
IXFN44N50U3
IXFN48N50U2
IXFN48N50U3
Fig. 11. Forward voltage drop.
Fig. 12. Recovery charge versus -diF/dt.
Fig. 13. Peak reverse current vs. -diF/dt.
Fig. 14. Dynamic parameters versus
junction temperature.
Fig. 15. Recovery time versus -diF/dt.
Fig. 16. Peak forward voltage and forward
recovery time vs. diF/dt.
Fig. 17. Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
5-5
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