IXYS IXFR24N50 Hiperfet power mosfets isoplus247 (electrically isolated back surface) Datasheet

Advanced Technical Information
HiPerFETTM Power MOSFETs
IXFR 26N50
ISOPLUS247TM
VDSS
ID25
500 V
24 A
500 V
22 A
trr £ 250 ns
IXFR 24N50
(Electrically Isolated Back Surface)
RDS(on)
0.20 W
0.23 W
N-Channel Enhancement Mode
High dV/dt, Low trr, HDMOSTM Family
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
IDM
TC = 25°C, Pulse width limited by TJM
IAR
TC = 25°C
26
24
104
96
26
24
A
A
A
A
A
A
EAR
TC = 25°C
30
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
PD
Maximum Ratings
26N50
24N50
26N50
24N50
26N50
24N50
TJ
TJM
Tstg
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS
250
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
2500
V~
6
g
t = 1 minute leads-to-tab
Weight
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 250uA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Notes 1 & 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500
2
V
4
V
±100
nA
TJ = 25°C
TJ = 125°C
200
1
mA
mA
26N50
24N50
0.20
0.23
W
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
TC = 25°C
TL
ISOPLUS 247TM
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
98526A (2/99)
1-2
IXFR 24N50
IXFR 26N50
Symbol
Test Conditions
gfs
VDS = 15 V; ID = IT
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note 1
11
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
21
S
4200
pF
450
pF
135
pF
16
25
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
33
45
ns
td(off)
RG = 1 W (External),
65
80
ns
30
40
ns
135
160
nC
28
40
nC
62
85
nC
0.50
K/W
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
RthJC
RthCK
0.15
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
26
A
Repetitive; pulse width limited by TJM
104
A
IF = IS, VGS = 0 V, Note 1
1.5
V
t rr
QRM
K/W
IF = Is, -di/dt = 100 A/ms,
VR = 100 V
IRM
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
1
2
10
15
250
400
1.5
ISOPLUS 247 (IXFR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim.
Millimeter
Min. Max.
A
4.83
5.21
A1
2.29
2.54
A2
1.91
2.16
b
1.14
1.40
1.91
2.13
b1
b2
2.92
3.12
C
0.61
0.80
D 20.80 21.34
E
15.75 16.13
e
5.45 BSC
L
19.81 20.32
L1
3.81
4.32
Q
5.59
6.20
R
4.32
4.83
S
13.21 13.72
T
15.75 16.26
U
1.65
3.03
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
ns
ns
mC
mC
A
A
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
IT = 13A
2. IT test current: IXFR26N50
IXFR24N50
IT = 12A
3.See IXFH26N50 data sheet for characteristic curves.
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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