IXYS IXFR32N50Q Hiperfet power mosfets isoplus247 Datasheet

HiPerFETTM Power MOSFETs
ISOPLUS247TM
VDSS
(Electrically Isolated Back Surface)
IXFR 30N50Q
IXFR 32N50Q
ID25
500 V
29 A
500 V
30 A
trr £ 250 ns
RDS(on)
0.16 W
0.15 W
N-Channel Enhancement Mode
High dV/dt, Low trr, HDMOSTM Family
Preliminary data
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
30
A
IDM
TC = 25°C, Pulse width limited by TJM
120
A
IAR
TC = 25°C
30
A
EAS
EAR
TC = 25°C
TC = 25°C
1.5
45
J
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
PD
Maximum Ratings
30N50
32N50
30N50
32N50
30N50
32N50
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
2500
V~
6
g
Weight
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
310
t = 1 minute leads-to-tab
ISOPLUS 247TM
E 153432
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 1mA
500
VGS(th)
VDS = VGS, ID = 4mA
2
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Notes 1, 2
4
V
±100
nA
TJ = 25°C
TJ = 125°C
100
1
mA
mA
30N50
32N50
0.16
0.15
W
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
98608B (7/00)
1-4
IXFR 30N50Q
IXFR 32N50Q
Symbol
Test Conditions
gfs
VDS = 10 V; ID = IT
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note 2
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
18
28
S
3950
pF
640
pF
210
pF
35
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
42
ns
td(off)
RG = 1 W (External),
75
ns
20
ns
150
nC
26
nC
85
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
RthJC
0.40
RthCK
0.15
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
Note: 2.
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
32
A
Repetitive; pulse width limited by TJM
128
A
IF = IS, VGS = 0 V, Note 1
1.5
V
250
IF = Is,
-di/dt = 100 A/ms,
VR = 100 V
IRM
Note: 1.
K/W
ISOPLUS 247 (IXFR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim.
Millimeter
Min. Max.
A
4.83
5.21
A1
2.29
2.54
A2
1.91
2.16
b
1.14
1.40
1.91
2.13
b1
b2
2.92
3.12
C
0.61
0.80
D 20.80 21.34
E
15.75 16.13
e
5.45 BSC
L
19.81 20.32
L1
3.81
4.32
Q
5.59
6.20
R
4.32
4.83
S
13.21 13.72
T
15.75 16.26
U
1.65
3.03
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
ns
0.75
mC
7.5
A
IT test condition:
IXFR30N50: IT = 15A
IXFR32N50: IT = 16A
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXFR 30N50Q
IXFR 32N50Q
Figure 1. Output Characteristics at 25OC
80
TJ = 125OC
6V
50
40
30
20
30
5V
20
4V
0
0
4
8
12
16
0
20
0
4
8
VDS - Volts
16
20
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
2.8
2.8
VGS = 10V
VGS = 10V
2.4
RDS(ON) - Normalized
RDS(ON) - Normalized
12
VDS - Volts
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
Tj=1250 C
2.0
1.6
Tj=250 C
1.2
0
10
20
30
40
50
2.4
ID = 32A
2.0
ID = 16A
1.6
1.2
0.8
25
60
50
Figure 5. Drain Current vs. Case Temperature
32
40
ID - Amperes
50
24
16
8
-50
0
25
50
75
TC - Degrees C
© 2000 IXYS All rights reserved
125
150
30
20
100 125 150
0
TJ = 25oC
TJ = 125oC
10
-25
100
Figure 6. Admittance Curves
40
0
75
TJ - Degrees C
ID - Amperes
ID - Amperes
6V
10
5V
10
0.8
VGS= 9V
8V
7V
40
ID - Amperes
60
ID - Amperes
50
VGS=10V
9V
8V
7V
TJ = 25OC
70
Figure 2. Output Characteristics at 125OC
2
3
4
5
6
VGS - Volts
3-4
IXFR 30N50Q
IXFR 32N50Q
Figure 7. Gate Charge
Figure 8. Capacitance Curves
14
10000
12
Vds=300V
=30A
ID=16A
IG=10mA
Capacitance - pF
VGS - Volts
10
F = 1MHz
Ciss
8
6
4
Coss
1000
Crss
2
0
0
50
100
150
200
100
250
0
Gate Charge - nC
5
10
15
20
25
VDS - Volts
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
100
VGS= 0V
ID - Amperes
80
60
TJ=125OC
40
20
TJ=25OC
0
0.4
0.6
0.8
1.0
1.2
VSD - Volts
Figure 10. Transient Thermal Resistance
0.60
0.40
R(th)JC - K/W
0.20
0.10
0.08
0.06
0.04
0.02
0.01
10-3
10-2
10-1
100
101
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4-4
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