IXYS IXFT18N90P Polar power mosfet hiperfet Datasheet

PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH18N90P
IXFT18N90P
IXFV18N90P
IXFV18N90PS
VDSS
ID25
=
=
≤
≤
RDS(on)
trr
900V
18A
Ω
600mΩ
300ns
TO-247 (IXFH)
G
D
D (TAB)
S
TO-268 (IXFT)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
900
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
900
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
18
A
IDM
TC = 25°C, Pulse Width Limited by TJM
36
A
IA
TC = 25°C
9
A
EAS
TC = 25°C
800
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
15
V/ns
PD
TC = 25°C
540
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
G
S
D (TAB)
PLUS220 (IXFV)
G
D
S
D (TAB)
PLUS220SMD (IXFV_S)
G
G = Gate
S = Source
TL
Maximum Lead Temperature for Soldering
300
°C
TSOLD
Plastic Body for 10s
260
°C
Md
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
z
FC
Mounting Force (PLUS220)
11..65/2.5..14.6
N/lb.
z
Weight
TO-247
TO-268
PLUS220 types
6
4
4
g
g
g
S
D (TAB)
D
= Drain
TAB = Drain
Features
z
z
International Standard Packages
Avalanche Rated
Low Package Inductance
Fast Intrinsic Diode
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
900
VGS(th)
VDS = VGS, ID = 1mA
3.0
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
TJ = 125°C
© 2009 IXYS CORPORATION, All Rights Reserved
z
z
z
V
Applications
6.0
V
± 100
nA
z
25 μA
1.5 mA
z
600
mΩ
High Power Density
Easy to Mount
Space Savings
z
z
z
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS100057A(9/09)
IXFH18N90P IXFV18N90P
IXFT18N90P IXFV18N90PS
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
6
RGi
Gate Input Resistance
Ciss
Coss
10
S
1.2
Ω
5230
pF
366
pF
53
pF
40
ns
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
33
ns
60
ns
44
ns
97
nC
30
nC
40
nC
0.23 °C/W
RthJC
RthCS
(TO-247, PLUS220)
0.25
°C/W
Source-Drain Diode
Characteristic Values
Min.
Typ.
Max.
TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
18
A
ISM
Repetitive, Pulse Width Limited by TJM
72
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
300 ns
IF = 9A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1.0
μC
10.8
A
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFH18N90P IXFV18N90P
IXFT18N90P IXFV18N90PS
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ T J = 25ºC
18
VGS = 10V
9V
8V
16
VGS = 10V
9V
36
32
14
28
ID - Amperes
12
ID - Amperes
@ T J = 25ºC
40
7V
10
8
6
8V
24
20
7V
16
12
6V
4
8
6V
2
4
5V
5V
0
0
0
1
2
3
4
5
6
7
8
9
0
10
3
6
9
12
@ T J = 125ºC
21
24
27
30
3.0
VGS = 10V
9V
8V
16
18
Fig. 4. RDS(on) Normalized to ID = 9A Value vs.
Junction Temperature
Fig. 3. Output Characteristics
18
15
VDS - Volts
VDS - Volts
VGS = 10V
2.6
R DS(on) - Normalized
ID - Amperes
14
7V
12
10
8
6V
6
2.2
I D = 18A
1.8
I D = 9A
1.4
1.0
4
0.6
5V
2
0
0.2
0
2
4
6
8
10
12
14
16
18
20
22
-50
24
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 9A Value vs. Drain
Current
50
75
100
125
150
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
20
3.0
18
VGS = 10V
2.6
TJ = 125ºC
16
14
2.2
ID - Amperes
R DS(on) - Normalized
25
TJ - Degrees Centigrade
1.8
1.4
12
10
8
6
4
TJ = 25ºC
1.0
2
0.6
0
0
4
8
12
16
20
24
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
28
32
36
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFH18N90P IXFV18N90P
IXFT18N90P IXFV18N90PS
Fig. 8. Transconductance
Fig. 7. Input Admittance
32
18
28
16
14
24
25ºC
20
g f s - Siemens
ID - Amperes
TJ = - 40ºC
TJ = 125ºC
25ºC
- 40ºC
16
12
12
10
8
125ºC
8
6
4
4
2
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
0
4
8
12
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
20
24
28
32
Fig. 10. Gate Charge
60
10
VDS = 450V
9
50
I D = 9A
8
I G = 10mA
7
VGS - Volts
40
IS - Amperes
16
ID - Amperes
30
20
TJ = 125ºC
6
5
4
3
2
TJ = 25ºC
10
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
10
20
VSD - Volts
30
40
50
60
70
80
90
100
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
1.00
10,000
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
Ciss
Coss
0.10
100
Crss
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXFH18N90P IXFV18N90P
IXFT18N90P IXFV18N90PS
TO-247 (IXFH) Outline
PLUS220 (IXFV) Outline
E
E1
A
A1
L2
E1
D1
D
∅P
1
2
L3
3
L1
L
3X b
2X e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
A2
Terminals: 1-Gate 2-Drain
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
c
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
PLUS220SMD (IXFV_S) Outline
TO-268 (IXFT) Outline
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_18N90P(76)9-11-09-A
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