Advance Technical Information IXFT50N30Q3 IXFH50N30Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 300V = 50A Ω ≤ 80mΩ TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA 50 A 150 A TC = 25°C 50 A EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 690 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 4.0 6.0 g g TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-268 TO-247 TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2011 IXYS CORPORATION, All Rights Reserved z V 6.5 V ±100 nA 10 μA 500 μA 80 mΩ High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100336(05/11) IXFT50N30Q3 IXFH50N30Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 19 Ciss Coss 29 S 3160 pF 600 pF 60 pF 0.17 Ω 14 ns VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr Gate Input Resistance Resistive Switching Times td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 tf RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 15 ns 24 ns 9 ns 65 nC 22 nC 32 nC Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.18 °C/W RthJC RthCS TO-268 Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 50 A Repetitive, Pulse Width Limited by TJM 200 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 11.8 A 940 nC TO-247 Outline 1 2 ∅P 3 e Note Terminals: 1 - Gate 3 - Source 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT50N30Q3 IXFH50N30Q3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 90 50 VGS = 10V VGS = 10V 45 80 40 70 9V 9.5V 60 ID - Amperes ID - Amperes 35 30 25 8.5V 20 50 9V 40 30 15 8.5V 8V 20 10 5 8V 10 7V 7V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4.5 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 50 3.0 VGS = 10V 45 VGS = 10V 2.6 40 R DS(on) - Normalized 9V ID - Amperes 35 30 25 8V 20 15 2.2 I D = 50A 1.8 I D = 25A 1.4 1.0 7V 10 0.6 5 6V 0 0.2 0 1 2 3 4 5 6 7 8 9 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 60 3.0 VGS = 10V 2.8 50 2.6 2.4 40 2.2 ID - Amperes R DS(on) - Normalized -25 VDS - Volts TJ = 125ºC 2.0 1.8 1.6 30 20 1.4 1.2 10 TJ = 25ºC 1.0 0 0.8 0 10 20 30 40 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT50N30Q3 IXFH50N30Q3 Fig. 8. Transconductance Fig. 7. Input Admittance 50 55 TJ = - 40ºC 50 45 40 25ºC g f s - Siemens ID - Amperes 40 35 TJ = 125ºC 30 25ºC 25 - 40ºC 20 30 125ºC 20 15 10 10 5 0 0 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 0 10 10 20 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 50 60 Fig. 10. Gate Charge 160 16 140 14 120 12 100 10 VGS - Volts IS - Amperes 30 ID - Amperes 80 60 VDS = 150V I D = 25A I G = 10mA 8 6 TJ = 125ºC 40 4 TJ = 25ºC 20 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 VSD - Volts 40 50 60 70 80 90 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 10000 RDS(on) Limit Ciss 25µs 100 1000 ID - Amperes Capacitance - PicoFarads 30 Coss 100 100µs 10 TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 1ms 10 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT50N30Q3 IXFH50N30Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_50N30Q3(Q6)05-12-11