IXYS IXFV26N50P Avalanche rated fast instrinsic diode Datasheet

PolarHVTM
Power MOSFET
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
VDSS
ID25
RDS(on)
trr
=
=
≤
≤
500 V
26 A
Ω
230 mΩ
200 ns
Avalanche Rated
Fast Instrinsic Diode
Preliminary Data Sheet
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGSS
Continuos
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
26
A
IDM
TC = 25°C, pulse width limited by TJM
78
A
IAR
TC = 25°C
26
A
EAR
TC = 25°C
40
mJ
EAS
TC = 25°C
1.0
J
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
10
V/ns
dv/dt
Maximum Ratings
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Md
Mounting torque
(TO-247)
FC
Mounting force
(PLUS220SMD)
Weight
TO-3P
PLUS220 & PLUS220SMD
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
PLUS220 (IXFV)
G
11..65/2.5..15
N/lb
6
5
g
g
3.0
V
5.0
V
±100
nA
25
250
µA
µA
230
mΩ
D (TAB)
S
PLUS220SMD (IXFV_S)
G
D (TAB)
S
1.13/10 Nm/lb.in.
500
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
400
Characteristic Values
Min. Typ.
Max.
TJ = 125°C
D (TAB)
D
TJ ≤ 150°C, RG = 4 Ω
PD
TO-247 (IXFH)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
International standard packages
z
Fast intrinsic diode
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99276A(09/05)
IXFH 26N50P
Symbol
Test Conditions
gfs
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
16
26
S
3600
pF
370
pF
C rss
57
pF
td(on)
20
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
IXFV 26N50P
IXFV 26N50PS
TO-247 AD (IXFH) Outline
1
2
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
3
tr
VGS = 10 V, VDS = 0.5 ID25
25
ns
td(off)
RG = 4 Ω (External)
58
ns
tf
20
ns
Dim.
Qg(on)
60
nC
20
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
25
nC
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
0.31
RthCK
0.21
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
26
A
ISM
Repetitive
104
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25A, -di/dt = 100 A/µs
QRM
VR = 100V
Millimeter
Min.
Max.
PLUS220 (IXFV) Outline
E
E1
300
ns
3.3
µC
Inches
Min.
Max.
A
A1
L2
E1
D1
D
L3
L1
PLUS220SMD (IXFV_S) Outline
E
E1
A
A1
L2
L
E1
3X b
D
A3
L3
L4
L
L1
2X b
e
c
A2
Terminals: 1 - Gate
3 - Source
2X e
A
A1
A2
A3
b
c
D
D1
E
E1
e
L
L1
L2
L3
L4
2 - Drain
TAB - Drain
c
A2
Terminals: 1 - Gate
3 - Source
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
2 - Drain
TAB - Drain
IXFH 26N50P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
30
60
27
VGS = 10V
24
7V
6V
VGS = 10V
I D - Amperes
I D - Amperes
7V
50
21
18
15
5.5V
12
9
40
6V
30
20
5.5V
5V
6
3
10
5V
4.5V
0
0
0
1
2
3
4
5
6
7
0
8
3
6
9
Fig. 3. Output Characteristics
@ 125ºC
15
18
21
24
27
30
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
30
3.1
VGS = 10V
27
2.8
21
R D S ( o n ) - Normalized
7V
6V
24
I D - Amperes
12
V D S - Volts
V D S - Volts
5.5V
18
15
12
5V
9
6
3
VGS = 10V
2.5
2.2
1.9
I D = 26A
1.6
I D = 13A
1.3
1
0.7
4.5V
0
0.4
0
2
4
6
8
10
12
14
16
18
20
-50
0
25
50
75
100
125
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
Fig. 6. Drain Current vs. Case
Tem perature
150
27
3.4
24
VGS = 10V
3
-25
V D S - Volts
0.5 ID25 Value vs. ID
21
TJ = 125∫C
2.6
I D - Amperes
R D S ( o n ) - Normalized
IXFV 26N50P
IXFV 26N50PS
2.2
1.8
18
15
12
9
1.4
6
TJ = 25∫C
1
3
0.6
0
0
5
10
15
20
25
30
35
I D - Amperes
© 2005 IXYS All rights reserved
40
45
50
55
60
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFH 26N50P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
55
40
50
35
g f s - Siemens
I D - Amperes
30
25
20
15
TJ = 125∫C
45
TJ = -40∫C
40
25∫C
125∫C
35
30
25
20
15
25∫C
-40∫C
10
10
5
5
0
0
3.5
4
4.5
5
5.5
6
0
6.5
5
10
15
V G S - Volts
20
25
30
35
40
45
90
100
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
70
VDS = 250V
9
60
VG S - Volts
50
I S - Amperes
IXFV 26N50P
IXFV 26N50PS
40
30
I D = 13A
7
I G = 10mA
6
5
4
3
TJ = 125∫C
20
8
2
TJ = 25∫C
10
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
0
10
20
30
V S D - Volts
40
50
60
70
80
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
100
10000
C iss
I D - Amperes
Capacitance - picoFarads
R DS(on) Limit
1000
C oss
25µs
100µs
10
1ms
100
TJ = 150∫C
C rss
f = 1MHz
DC
10ms
TC = 25∫C
1
10
0
5
10
15
20
25
30
35
40
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
1000
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
Fig. 13. Maxim um Transient Thermal Resistance
R ( t h ) J C - ∫C / W
1.00
0.10
0.01
0.1
1
10
Pulse Width - milliseconds
© 2005 IXYS All rights reserved
100
1000
Similar pages