IXYS IXFX320N17T2 Gigamos trencht2 hiperfet power mosfet Datasheet

Advance Technical Information
IXFK320N17T2
IXFX320N17T2
GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
VDSS
ID25
=
=
170V
320A
Ω
5.2mΩ
150ns
RDS(on) ≤
≤
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
170
170
V
V
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
ID25
IL(RMS)
IDM
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
320
160
800
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
100
5
A
J
PD
TC = 25°C
1670
W
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
20
V/ns
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
20..120 /4.5..27
N/lb.
10
6
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque (TO-264)
FC
Mounting Force
Weight
TO-264
PLUS247
(PLUS247)
G
(TAB)
G = Gate
S = Source
BVDSS
VGS = 0V, ID = 3mA
170
VGS(th)
VDS = VGS, ID = 8mA
2.5
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
RDS(on)
VGS = 10V, ID = 60A, Note 1
5.0
± 200
z
z
z
z
z
TJ = 150°C
Easy to Mount
Space Savings
High Power Density
V
Applications
V
z
z
z
50 μA
5 mA
z
5.2 mΩ
z
z
z
z
© 2009 IXYS CORPORATION, All Rights Reserved
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
z
nA
D = Drain
TAB = Drain
Features
z
Characteristic Values
Min.
Typ.
Max.
(TAB)
S
PLUS247 (IXFX)
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
D
Synchronous Recification
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS100188(09/09)
IXFK320N17T2
IXFX320N17T2
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
120
VDS = 10V, ID = 60A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
td(on)
tr
td(off)
tf
Gate Input Resistance
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
190
S
45
nF
2890
pF
410
pF
1.96
Ω
46
ns
170
ns
115
ns
230
ns
640
nC
185
nC
175
nC
RthJC
0.09
RthCS
TO-264 (IXFK) Outline
°C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
Characteristic Values
Min.
Typ.
Max.
320
A
Repetitive, Pulse Width Limited by TJM
1280
A
IF = 100A, VGS = 0V, Note 1
1.25
V
150
IF = 160A, -di/dt = 100A/μs
VR = 60V, VGS = 0V
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
μC
9.00
A
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
5,049,961
5,063,307
5,187,117
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS 247TM (IXFX) Outline
Dim.
4,931,844
5,017,508
5,034,796
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
ns
0.53
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
Millimeter
Min.
Max.
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFK320N17T2
IXFX320N17T2
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ T J = 25ºC
@ T J = 25ºC
320
400
VGS = 15V
10V
8V
7V
280
240
VGS = 15V
10V
7V
350
300
ID - Amperes
ID - Amperes
6V
200
6V
160
120
250
200
150
5.5V
5.5V
100
80
5V
40
5V
50
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
VDS - Volts
Fig. 3. Output Characteristics
320
6
7
3.4
VGS = 15V
10V
7V
VGS = 10V
3.0
240
2.6
R DS(on) - Normalized
ID - Amperes
5
Fig. 4. RDS(on) Normalized to ID = 160A Value vs.
Junction Temperature
@ T J = 150ºC
280
4
VDS - Volts
6V
200
160
120
5V
80
40
I D = 320A
2.2
I D = 160A
1.8
1.4
1.0
0.6
4V
0.2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50
4.0
-25
0
25
VDS - Volts
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 160A Value vs.
Drain Current
Fig. 6. Drain Current vs. Case Temperature
180
3.4
VGS = 10V
3.0
160
External Lead Current Limit
TJ = 175ºC
2.6
120
ID - Amperes
R DS(on) - Normalized
140
2.2
1.8
100
80
60
1.4
40
TJ = 25ºC
1.0
20
0.6
0
0
50
100
150
200
250
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
300
350
400
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXFK320N17T2
IXFX320N17T2
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
400
TJ = - 40ºC
180
350
160
300
g f s - Siemens
ID - Amperes
140
120
100
TJ = 150ºC
80
25ºC
60
- 40ºC
25ºC
250
200
150ºC
150
100
40
50
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
20
40
60
80
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
120
140
160
180
200
Fig. 10. Gate Charge
10
400
VDS = 85V
9
350
I D = 160A
8
300
I G = 10mA
7
250
VGS - Volts
IS - Amperes
100
ID - Amperes
200
150
6
5
4
3
TJ = 150ºC
100
2
TJ = 25ºC
50
1
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
1.3
100
200
300
400
500
600
700
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1,000.0
100.0
RDS(on) Limit
External Lead Limit
100.0
100µs
10.0
ID - Amperes
Capacitance - NanoFarads
25µs
Ciss
Coss
10.0
1ms
1.0
1.0
100ms
TC = 25ºC
Crss
f = 1 MHz
10ms
TJ = 175ºC
DC
Single Pulse
0.1
0.1
0
5
10
15
20
25
30
35
40
VDS - Volts
1
10
100
1,000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_320N17T2(9V)9-02-09
IXFK320N17T2
IXFX320N17T2
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
360
380
RG = 1Ω , VGS = 10V
340
RG = 1Ω , VGS = 10V
320
VDS = 85V
I
D
VDS = 85V
= 200A
280
t r - Nanoseconds
t r - Nanoseconds
300
260
220
240
200
TJ = 125ºC
160
120
180
I
D
TJ = 25ºC
= 100A
80
140
40
0
100
25
35
45
55
65
75
85
95
105
115
40
125
60
80
100
TJ - Degrees Centigrade
700
td(on) - - - -
TJ = 125ºC, VGS = 10V
120
I D = 100A
300
80
200
40
100
t f - Nanoseconds
t r - Nanoseconds
400
3
4
5
6
7
8
9
td(off) - - - -
VDS = 85V
500
180
400
160
I D = 200A
300
100
100
25
10
35
45
200
700
180
TJ = 125ºC
160
VDS = 85V
300
140
TJ = 25ºC
120
100
100
0
40
60
80
100
75
85
95
105
115
80
125
120
140
160
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
180
80
200
800
tf
td(off) - - - -
700
TJ = 125ºC, VGS = 10V
I D = 200A
VDS = 85V
600
600
500
500
400
400
I D = 100A
300
300
200
200
100
100
1
2
3
4
5
6
RG - Ohms
7
8
9
10
t d(off) - Nanoseconds
500
t f - Nanoseconds
600
t d(off) - Nanoseconds
t f - Nanoseconds
800
200
65
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
220
RG = 1Ω, VGS = 10V
55
TJ - Degrees Centigrade
700
400
140
120
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
td(off) - - - -
I D = 100A
200
RG - Ohms
tf
200
RG = 1Ω, VGS = 10V
0
0
2
200
t d(off) - Nanoseconds
160
I D = 200A
t d(on) - Nanoseconds
VDS = 85V
1
180
220
tf
600
200
500
160
700
240
600
140
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
tr
120
ID - Amperes
IXFK320N17T2
IXFX320N17T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximium Transient Thermal Impedance
.sadgsfgsf
0.200
Z (th )JC - ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_320N17T2(9V)9-02-09
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