IXYS IXGA12N120A2 Igbt optimized for switching up to 5khz Datasheet

IGBT
Optimized for
IXGA 12N120A2
IXGP 12N120A2
VCES
= 1200 V
=
24 A
IC25
VCE(sat) = 3.0 V
switching up to 5KHz
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1200
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
24
A
IC90
TC = 90°C
12
A
ICM
TC = 25°C, 1 ms
48
A
SSOA
VGE = 15 V, TVJ = 125°C, RG = 100 Ω
ICM = 24
A
(RBSOA)
Clamped inductive load
PC
TC = 25°C
TO-220AB (IXGP)
G C
E
TO-263 AA (IXGA)
@ 0.8 VCES
G
75
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TJ
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
Weight
TO-220
TO-263
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
4
2
g
g
E
C (TAB)
Features
• International
standard packages
JEDEC TO-220AB and TO-263AA
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC = 250 µA, VGE = 0 V
1200
VGE(th)
IC = 250 µA, VCE = VGE
2.5
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = IC90, VGE = 15V
© 2004 IXYS All rights reserved
V
5.0
V
TJ = 25°C
25
µA
TJ = 125°C
250
µA
±100
nA
3.0
V
2.4
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
discharge
• Capacitor
Advantages
• Easy to mount with one screw
• Reduces assembly time and cost
• High power density
DS99199(8/04)
IXGA12N120A2
IXGP12N120A2
TO-220 AB Dimensions
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min. Typ. Max.
IC = IC90 VCE = 10 V
4.0
7.8
S
35
A
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC(on)
VGE = 10 V, VCE = 10V
530
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
pF
30
pF
4
pF
24
nC
5.5
nC
8.8
nC
td(on)
Inductive load, TJ = 25°°C
15
ns
tri
IC
= IC90, VGE = 15 V
30
ns
td(off)
VCE = 960 V, RG = Roff = 100 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
ns
650 1000
ns
5.4
Inductive load, TJ = 125°°C
IC
680 1000
= IC90, VGE = 15 V
VCE = 960 V, RG = Roff = 100 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
ns
30
ns
0.5
mJ
700
ns
1050
ns
7.7
mJ
1.66
TO-220
0.5
2 - Collector
4 - Collector
Bottom Side
mJ
15
RthJC
RthCK
9.0
Pins: 1 - Gate
3 - Emitter
TO-263 AA Outline
K/W
K/W
1.
2.
3.
4.
Min. Recommended Footprint
(Dimensions in inches and mm)
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Gate
Collector
Emitter
Collector
Bottom Side
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXGA12N120A2
IXGP12N120A2
Fig. 1. Output Characteristics
@ 25 ºC
Fig. 2. Extended Output Characteristics
@ 25 ºC
70
24
22
VGE = 15V
20
13V
11V
13V
50
16
9V
14
I C - Amperes
I C - Amperes
18
VGE = 15V
60
12
10
7V
8
11V
40
9V
30
20
6
7V
4
10
2
5V
0
5V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
5
10
V C E - Volts
25
30
1.7
24
VGE = 15V
20
13V
11V
VGE = 15V
1.6
1.5
VC E (sat)- Normalized
22
18
I C - Amperes
20
Fig. 4. Dependence of V CE(sat) on
Tem perature
Fig. 3. Output Characteristics
@ 125 ºC
16
14
9V
12
10
7V
8
6
I C = 24A
1.4
1.3
1.2
I C = 12A
1.1
1.0
0.9
4
I C = 6A
0.8
5V
2
0.7
0
0.5
1
1.5
2
2.5
3
V CE - Volts
3.5
4
4.5
-50
5
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
Fig. 6. Input Adm ittance
8
24
TJ = 25ºC
7
21
18
I C = 24A
6
12A
6A
5
I C - Amperes
VC E - Volts
15
V C E - Volts
4
3
15
12
9
TJ = 125ºC
6
2
25ºC
-40ºC
3
0
1
6
7
8
9
10
11
12
V G E - Volts
© 2004 IXYS All rights reserved
13
14
15
16
4
4.5
5
5.5
6
6.5
7
V G E - Volts
7.5
8
8.5
9
IXGA12N120A2
IXGP12N120A2
Fig. 8. Dependence of Turn-off
Fig. 7. Transconductance
Energy Loss on RG
11
18
10
16
9
14
E o f f - milliJoules
g f s - Siemens
8
7
6
TJ = -40ºC
5
25ºC
4
125ºC
3
I C = 24A
TJ = 25ºC
12
VGE = 15V
10
VCE = 960V
8
6
4
2
I C = 6A
2
1
0
0
0
3
6
9
12
15
18
21
24
0
27
200
400
I C - Amperes
Energy Loss on IC
t d ( o f f ) - microseconds
E o f f - MilliJoules
VCE = 960V
TJ = 25ºC
8
6
4
1.8
1.5
1.2
0
0.6
12
15
I C - Amperes
18
21
0
24
Current Fall Tim e on RG
0.65
I C = 12A
0.55
VGE = 15V
0.50
VCE = 960V
0.45
TJ = 25ºC
I C = 6A
0.40
0.35
Switching Time -microseconds
0.70
0.60
400
600
800
R G - Ohms
1000
Sw itching Tim e on IC
0.85
I C = 24A
0.75
200
Fig. 12. Dependence of Turn-off
Fig. 11. Dependence of Turn-off
0.80
12A
24A
TJ = 25ºC
2.1
0.9
9
I C = 6A
VCE = 960V
2.4
2
6
VGE = 15V
2.7
VGE = 15V
10
1000
Delay Tim e on RG
3
R G =100Ω
12
800
Fig. 10. Dependence of Turn-off
16
14
600
R G - Ohms
Fig. 9. Dependence of Turn-Off
t f i - microseconds
I C = 12A
0.80
0.75
0.70
td(off)
0.65
tfi - - - - -
0.60
R G = 100Ω
0.55
VGE = 15V
VCE = 960V
0.50
TJ = 25ºC
0.45
0
200
400
600
R G - Ohms
800
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
6
8
10
12
14
16
I C - Amperes
18
20
22
24
IXGA12N120A2
IXGP12N120A2
Fig. 14. Reverse-Bias Safe
Operating Area
Fig. 13. Gate Charge
16
30
VCE = 600V
14
12
I G = 10mA
I C - Amperes
VG E - Volts
25
I C = 12A
10
8
6
20
15
10
TJ = 125ºC
4
R G = 100Ω
5
2
dV/dT < 10V/ns
0
0
0
2
4
6
8
10
12
14
16
Q G - nanoCoulombs
18
20
22
100
24
300
500
700
900
1100
1300
V C E - Volts
Fig. 15. Capacitance
1000
Capacitance - p F
C ies
100
C oes
10
C res
f = 1 MHz
1
0
5
10
15
20
25
V C E - Volts
30
35
40
Fig. 17. Maxim um Transient Therm al Resistance
R ( t h ) J C - ºC / W
10.00
1.00
0.10
0.1
© 2004 IXYS All rights reserved
1
10
Pulse Width - milliseconds
100
1000
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