HiPerFASTTM IGBTs B2-Class High Speed VCES = IC110 = VCE(sat) ≤ tfi(typ) = IXGA16N60B2 IXGP16N60B2 600V 16A 2.3V 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 40 16 100 A A A SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 22Ω Clamped Inductive load ICM = 32 VCE ≤ VCES A PC TC = 25°C 150 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 10..65 / 2.2..14.6 Nm/lb.in. N/lb. TJ TJM Tstg Md FC Mounting Torque (TO-220) Mounting Force (TO-263) TL TSOLD Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Weight TO-263 TO-220 G 300 260 °C °C 2.5 3.0 g g E C (Tab) TO-220AB (IXGP) G CE G = Gate E = Emitter C (Tab) C = Collector Tab = Collector Features z z z Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Advantages z z High Power Density Low Gate Drive Requirement Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC 3.0 ICES VCE = VCES,VGE = 0V = 250μA, VCE = VGE 5.5 VCE = 0V, VGE = ±20V VCE(sat) IC z V 15 μA 250 μA TJ = 125°C IGES z ±100 nA = 12A, VGE = 15V, Note1 2.30 TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved 1.65 z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS99141B(08/10) IXGA16N60B2 IXGP16N60B2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC = 12A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 8 S Qg(on) Qge IC = 12A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°C IC = 12A, VGE = 15V VCE = 400V, RG = 22Ω Note 2 Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-263 (IXGA) Outline Inductive load, TJ = 125°C IC = 12A, VGE = 15V VCE = 400V, RG = 22Ω Note 2 TO-220 675 60 20 pF pF pF 24 nC 5 nC 13 nC 18 20 0.16 73 70 ns ns mJ ns ns 0.12 0.22 mJ 17 20 0.26 140 125 0.38 ns ns mJ ns ns mJ 0.50 0.83 °C/W °C/W 1 = Gate 2 = Collector 3 = Emitter 4 = Collector TO-220 (IXGP) Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. 1 = Gate 2 = Collector Pins: 1 - Gate 3 = Emitter 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA16N60B2 IXGP16N60B2 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 24 100 VGE = 15V 13V 12V 90 VGE = 15V 11V 80 14V 70 16 IC - Amperes IC - Amperes 20 10V 12 9V 8 60 13V 50 12V 40 11V 30 10V 20 4 8V 10 7V 0 0 0.5 1 1.5 2 2.5 9V 8V 0 3 0 5 10 15 24 30 125 150 1.4 VGE = 15V 13V 12V 16 10V 12 9V 8 6V 0.5 1 1.5 2 2.5 I C = 24A I C = 12A 1.1 1.0 0.9 0.7 7V 0 1.2 0.8 8V 4 0 VGE = 15V 1.3 11V VCE(sat) - Normalized 20 IC - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC I C = 6A 0.6 3 0 25 50 VCE - Volts 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 35 5.0 TJ = 25ºC 4.5 30 4.0 25 3.5 3.0 I C IC - Amperes VCE - Volts 20 VCE - Volts VCE - Volts = 24A 2.5 1.5 TJ = - 40ºC 25ºC 125ºC 15 10 12A 2.0 20 5 6A 1.0 0 8 9 10 11 12 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 12 IXGA16N60B2 IXGP16N60B2 Fig. 8. Gate Charge Fig. 7. Transconductance 18 16 TJ = - 40ºC 16 125ºC 10 I C = 12A I G = 10mA 12 25ºC VGE - Volts g f s - Siemens 14 12 VCE = 300V 14 8 6 10 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 0 35 5 10 15 20 25 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 35 10,000 f = 1 MHz 25 Cies 1,000 IC - Amperes Capacitance - PicoFarads 30 Coes 100 20 15 10 TJ = 125ºC 5 Cres 10 0 5 10 15 20 25 30 35 0 100 40 RG = 22Ω dv / dt < 10V / ns 150 200 250 VCE - Volts 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGA16N60B2 IXGP16N60B2 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eon - Eoff 1.1 --- TJ = 125ºC , VGE = 15V 1.0 VCE = 400V 0.8 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.7 0.6 0.6 0.5 0.5 0.4 I C 30 40 50 60 70 80 90 ---- 0.7 0.6 0.6 TJ = 125ºC 0.5 0.3 0.3 0.3 0.2 0.2 0.1 0.1 100 0 0.1 0 12 13 14 15 16 17 1 190 0.9 180 0.8 0.6 0.6 I C = 24A 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 I C = 12A 0.1 0 45 55 65 75 85 95 105 115 tfi 270 160 240 150 210 I 140 C 130 90 160 30 40 50 100 80 80 TJ = 25ºC 60 40 40 16 17 18 19 60 70 80 90 60 100 20 21 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 22 23 24 180 tfi td(on) - - - - 160 RG = 22Ω , VGE = 15V VCE = 400V 140 120 140 120 I C = 24A, 12A 100 100 80 80 60 60 40 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 40 125 t d(off) - Nanoseconds 120 t f i - Nanoseconds 180 100 15 150 110 180 160 TJ = 125ºC 14 = 12A 120 200 140 13 C 120 20 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - 140 12 180 I Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature VCE = 400V 60 = 24A RG - Ohms RG = 22Ω , VGE = 15V 120 24 300 100 0 125 200 160 23 VCE = 400V Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 22 td(off) - - - - TJ - Degrees Centigrade 180 21 330 170 t f i - Nanoseconds 0.7 35 20 t d(off) - Nanoseconds 0.7 25 19 TJ = 125ºC, VGE = 15V Eon - MilliJoules Eoff - MilliJoules ---- VCE = 400V 0.1 18 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance RG = 22Ω , VGE = 15V 0.8 0.2 TJ = 25ºC IC - Amperes 1 Eon 0.5 0.4 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.8 VCE = 400V RG - Ohms 0.9 0.9 0.4 0.3 20 Eon RG = 22Ω , VGE = 15V 0.4 = 12A 0.2 Eoff 1 Eon - MilliJoules I C = 24A 1 Eon - MilliJoules Eoff - MilliJoules 0.9 1.1 Eoff - MilliJoules 1.2 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXGA16N60B2 IXGP16N60B2 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 90 70 50 50 45 60 40 50 35 40 I C 30 I C = 12A 0 20 30 40 50 60 70 80 90 22 VCE = 400V 45 21 TJ = 25ºC, 125ºC 40 20 30 18 25 17 15 20 16 10 100 15 20 10 td(on) - - - - 19 25 20 tri RG = 22Ω , VGE = 15V 35 30 = 24A 23 t d(on) - Nanoseconds VCE = 400V t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V 55 t r i - Nanoseconds tri 80 55 15 12 13 14 15 16 17 18 19 20 21 22 23 24 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 24 55 tri 50 RG = 22Ω , VGE = 15V td(on) - - - - 23 22 VCE = 400V 45 21 I 40 C = 24A 20 35 19 30 18 25 17 I C = 12A 20 16 15 15 10 25 35 45 55 65 75 85 95 105 115 t d(on) - Nanoseconds t r i - Nanoseconds 60 14 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXG_16N60B3D1(3D)8-02-10