IXYS IXGA20N120A3 Genx3 1200v igbt Datasheet

GenX3TM 1200V IGBTs
VCES = 1200V
IC110 = 20A
VCE(sat) ≤ 2.5V
IXGA20N120A3
IXGP20N120A3
IXGH20N120A3
Ultra-Low Vsat PT IGBTs for
up to 3 kHz Switching
TO-263 AA (IXGA)
G
E
C (Tab)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
TO-220AB (IXGP)
1200
1200
V
V
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
40
20
120
A
A
A
SSOA
(RBSOA)
VGE = 15V, TJ = 125°C, RG = 10Ω
Clamped Inductive Load
ICM = 40
@VCE ≤ 960
A
V
PC
TC = 25°C
TJ
TJM
Tstg
Md
FC
Mounting Torque (TO-247 & TO-220)
Mounting Force (TO-263)
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Weight
TO-263
TO-220
TO-247
180
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10
10..65 / 2.2..14.6
Nm/lb.in.
N/lb.
300
260
°C
°C
2.5
3.0
6.0
g
g
g
G
CE
C (Tab)
TO-247 (IXGH)
G
C
E
G = Gate
E = Emitter
C (Tab)
C = Collector
Tab = Collector
Features
z
z
Optimized for Low Conduction Losses
International Standard Packages
Advantages
z
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250μA, VGE = 0V
1200
VGE(th)
IC
= 250μA, VCE = VGE
2.5
ICES
VCE = VCES, VGE = 0V
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 20A, VGE = 15V, Note 1
TJ = 125°C
Applications
V
TJ = 125°C
IGES
2.3
2.5
5.0
V
25
1
μA
mA
±100
nA
2.5
V
V
z
z
z
z
z
z
z
z
z
© 2009 IXYS CORPORATION, All Rights Reserved
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
DS100046A(11/09)
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Characteristic Values
Min.
Typ.
Max.
7
12
S
1075
80
27
pF
pF
pF
50
nC
7.3
nC
23
nC
16
44
2.85
290
715
ns
ns
mJ
ns
ns
6.47
mJ
16
50
5.53
310
1220
10.10
ns
ns
mJ
ns
ns
mJ
0.50
0.21
0.69 °C/W
°C/W
°C/W
Qg
Qge
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Inductive Load, TJ = 25°°C
IC = 20A, VGE = 15V
VCE = 960V, RG = 10Ω
Note 2
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°°C
IC = 20A, VGE = 15V
VCE = 960V, RG = 10Ω
Note 2
RthJC
RthCK
TO-247 (IXGH) AD Outline
TO-220
TO-247
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-220 (IXGP) Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-263 (IXGA) Outline
Pins:
1 - Gate
3 - Emitter
2 - Collector
4 - Collector
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
140
40
VGE = 15V
13V
11V
35
VGE = 15V
120
100
25
IC - Amperes
IC - Amperes
30
9V
20
15
7V
13V
80
11V
60
9V
40
10
20
5
5V
7V
0
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
3.6
4
8
12
20
24
28
32
125
150
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
1.8
40
VGE = 15V
13V
11V
35
VGE = 15V
1.6
VCE(sat) - Normalized
30
IC - Amperes
16
VCE - Volts
VCE - Volts
25
9V
20
15
7V
I
= 40A
C
1.4
1.2
I
C
= 20A
I
C
= 10A
1.0
10
0.8
5
5V
0
0.6
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
-50
4.0
-25
0
25
VCE - Volts
50
75
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
45
7.5
TJ = 25ºC
40
TJ = - 40ºC
25ºC
125ºC
6.5
35
I
4.5
C
IC - Amperes
5.5
VCE - Volts
100
TJ - Degrees Centigrade
= 40A
20A
3.5
30
25
20
15
10A
10
2.5
5
0
1.5
5
6
7
8
9
10
11
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
VGE - Volts
7.0
7.5
8.0
8.5
9.0
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
16
TJ = - 40ºC
14
14
VCE = 600V
12
12
I G = 10 mA
25ºC
10
VGE - Volts
g f s - Siemens
I C = 20A
125ºC
8
10
8
6
6
4
4
2
2
0
0
0
5
10
15
20
25
30
35
40
0
45
5
10
15
Fig. 9. Capacitance
25
30
35
40
45
50
Fig. 10. Reverse-Bias Safe Operating Area
45
10,000
40
f = 1MHz
35
Cies
30
1,000
IC - Amperes
Capacitance - PicoFarads
20
QG - NanoCoulombs
IC - Amperes
Coes
100
25
20
15
10
5
Cres
0
200
10
0
5
10
15
20
25
30
35
40
TJ = 125ºC
RG = 10Ω
dv / dt < 10V / ns
300
400
500
VCE - Volts
600
700
800
900
1000
1100
1200
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
10
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
26
---
TJ = 125ºC , VGE = 15V
22
18
22
Eoff
20
RG = 10Ω , VGE = 15V
16
20
14
I
18
= 40A
C
12
16
10
14
8
I C = 20A
12
10
8
10
15
20
25
30
35
40
45
12
Eon
18
9
16
8
TJ = 125ºC
14
7
12
6
TJ = 25ºC
10
8
4
4
6
3
2
4
2
20
50
22
24
26
11
1700
10
1600
9
1500
14
7
I C = 40A
12
6
10
5
8
4
I C = 20A
6
2
35
45
55
65
75
85
95
105
115
tfi
550
I
1300
450
1100
400
1000
350
I
900
C
= 40A
300
200
1
125
600
150
10
15
20
25
td(off) - - - -
360
1400
350
1300
45
50
tfi
TJ = 25ºC
700
600
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
36
340
38
40
t f i - Nanoseconds
330
VCE = 960V
1100
320
1000
310
I C = 40A
900
I
C
300
= 20A
800
290
290
700
280
280
600
300
34
td(off) - - - -
25
35
45
55
65
75
85
TJ - Degrees Centigrade
95
105
115
270
125
t d(off) - Nanoseconds
310
t d(off) - Nanoseconds
t f i - Nanoseconds
40
350
1200
340
900
32
35
RG = 10Ω , VGE = 15V
320
30
30
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
330
28
500
1200
250
TJ = 125ºC
26
= 20A
700
1100
24
C
2
VCE = 960V
22
600
VCE = 960V
1400
RG = 10Ω , VGE = 15V
20
650
td(off) - - - -
RG - Ohms
tfi
800
40
800
1400
1000
38
TJ = 125ºC, VGE = 15V
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
1200
36
700
TJ - Degrees Centigrade
1300
34
3
4
25
32
t d(off) - Nanoseconds
8
E on - MilliJoules
E off - MilliJoules
----
VCE = 960V
16
30
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
t f - Nanoseconds
18
Eon
28
IC - Amperes
22
RG = 10Ω , VGE = 15V
5
6
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
Eoff
10
VCE = 960V
RG - Ohms
20
11
----
E on - MilliJoules
VCE = 960V
E on - MilliJoules
E off - MilliJoules
Eon -
Eoff
24
E off - MilliJoules
24
20
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 19. Inductive Turn-on Switching Times
vs. Collector Current
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
160
55
tri
160
TJ = 125ºC, VGE = 15V
50
td(on) - - - -
40
120
35
I
100
C
= 40A
30
80
I
C
25
= 20A
60
20
40
15
20
10
0
15
20
25
30
35
40
45
td(on) - - - -
22
RG = 10Ω , VGE = 15V
5
10
tri
140
120
21
VCE = 960V
100
20
TJ = 125ºC
80
19
TJ = 25ºC
60
18
40
17
20
16
0
15
20
50
t d(on) - Nanoseconds
VCE = 960V
140
23
45
t r i - Nanoseconds
180
t d(on) - Nanoseconds
t r i - Nanoseconds
200
22
24
26
28
30
32
34
36
38
40
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times
vs. Junction Temperature
28
140
tri
td(on) - - - -
120
VCE = 960V
26
RG = 10Ω , VGE = 15V
24
100
22
I C = 40A
80
20
60
18
40
I
C
16
= 20A
20
25
35
45
55
65
75
85
95
t d(on) - Nanoseconds
t r i - Nanoseconds
160
105
115
14
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_20N120A3(4L)10-01-08
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