IXYS IXGH10N60 Low vce(sat) igbt, high speed igbt Datasheet

Preliminary data
VCES
Low VCE(sat) IGBT
High speed IGBT
IXGA/IXGP/IXGH10N60
600 V
IXGA/IXGP/IXGH10N60A 600 V
IC25
VCE(sat)
20 A
20 A
2.5 V
3.0 V
TO-220AB(IXGP)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
I C25
TC = 25°C
20
A
I C90
TC = 90°C
10
A
I CM
TC = 25°C, 1 ms
40
A
SSOA
(RBSOA)
VGE = 15 V, T VJ = 125°C, RG = 150 Ω
Clamped inductive load, L = 300 µH
ICM = 20
@ 0.8 VCES
A
PC
TC = 25°C
100
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TJ
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque, TO-247 AD
Weight
Symbol
1.13/10 Nm/lb.in.
TO-263 AA
TO-247 AD
Test Conditions
IC
= 250 µA, VGE = 0 V
600
VGE(th)
IC
= 250 µA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
I GES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
© 1996 IXYS All rights reserved
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
= IC90, VGE = 15 V
2
6
TJ = 25°C
TJ = 125°C
10N60
10N60A
V
5
V
200
1
µA
mA
±100
nA
2.5
3.0
V
V
G C
E
TO-263 AA (IXGA)
G
E
C (TAB)
TO-247 AD (IXGH)
G
C (TAB)
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l
International standard packages
JEDEC TO-263 AA surface
mountable and JEDEC TO-247 AD
l
2nd generation HDMOSTM process
Low VCE(sat)
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
Space savings, TO-263 AA
l
Facilitates automated assembly
l
Reduces assembly time and cost
l
Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
l
High power density
l
91510G (9/96 )
IXGA/ IXGP/
IXGA/ IXGP/
Symbol
Test Conditions
gfs
I C = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
8
S
750
pF
100
pF
Cres
30
pF
Qg
50
70
nC
15
25
nC
25
45
nC
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
Eoff
Inductive load, TJ = 25°°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES,
RG = Roff = 150 Ω
Remarks: Switching times
may increase for VCE
10N60A
(Clamp) > 0.8 • VCES ,
higher TJ or increased RG
10N60A
td(on)
Inductive load, TJ = 125°°C
100
ns
tri
IC = IC90, VGE = 15 V,
L = 100 µH
200
ns
1
mJ
td(on)
tri
Eon
td(off)
tfi
Eon
td(off)
tfi
Eoff
TO-220 AB Outline
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
4
VCE = 0.8 VCES ,
RG = Roff = 150 Ω
10N60
Remarks: Switching times
10N60A
may increase for V CE
(Clamp) > 0.8 • V CES, higher 10N60
10N60A
TJ or increased RG
IXGH10N60
IXGH10N60A
100
ns
200
ns
0.4
mJ
600
ns
300
ns
0.6
mJ
900
1500
ns
570
360
2000
600
ns
ns
2.0
1.2
Dim.
A
B
Millimeter
Min.
Max.
12.70
14.93
14.23
16.50
Inches
Min.
Max.
0.500
0.580
0.560
0.650
C
D
9.66
3.54
10.66
4.08
0.380
0.139
0.420
0.161
E
F
5.85
2.29
6.85
2.79
0.230
0.090
0.270
0.110
G
H
J
K
M
N
1.15
2.79
0.64
2.54
4.32
0.64
1.77
6.35
0.89
BSC
4.82
1.39
0.045
0.110
0.025
0.100
0.170
0.025
0.070
0.250
0.035
BSC
0.190
0.055
Q
R
0.51
2.04
0.76
2.49
0.020
0.080
0.030
0.115
TO-263 AA Outline
mJ
mJ
1.
2.
3.
4.
1.25 K/W
RthJC
RthCK
0.25
K/W
IXGA/P/IXGH 10N60 / 10N60A characteristic curves are located in the
IXGH 10N60U1 and IXGH 10N60AU1 data sheet.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-247 AD Outline
Dim.
∅P
e
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min.
Max.
4.7
5.3
2.2
2.54
2.2
2.6
1.0
1.4
1.65
2.13
2.87
3.12
.4
.8
20.80
21.46
15.75
16.26
5.20
5.72
19.81
20.32
4.50
3.55
3.65
5.89
6.40
4.32
5.49
6.15
BSC
Dim.
Inches
Min.
Max.
.185
.209
.087
.102
.059
.098
.040
.055
.065
.084
.113
.123
.016
.031
.819
.845
.610
.640
0.205 0.225
.780
.800
.177
.140
.144
0.232 0.252
.170
.216
242
BSC
Millimeter
Min.
Max.
4.06
4.83
2.03
2.79
0.51
0.99
1.14
1.40
0.46
0.74
1.14
1.40
8.64
9.65
7.11
8.13
9.65
10.29
6.86
8.13
2.54
BSC
14.61
15.88
2.29
2.79
1.02
1.40
1.27
1.78
0
0.38
0.46
0.74
Gate
Collector
Emitter
Collector Bottom Side
Inches
Min. Max.
.160
.190
.080
.110
.020
.039
.045
.055
.018
.029
.045
.055
.340
.380
.280
.320
.380
.405
.270
.320
.100 BSC
.575
.625
.090
.110
.040
.055
.050
.070
0
.015
.018
.029
Min. Recommended Footprint
(Dimensions in inches and (mm))
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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