IXYS IXGH12N120A3 Genx3 1200v igbt Datasheet

IXGA12N120A3
IXGP12N120A3
IXGH12N120A3
GenX3TM 1200V
IGBTs
High Surge Current
VCES = 1200V
= 12A
IC90
VCE(sat) ≤ 3.0V
Ultra-Low Vsat PT IGBTs for
up to 3kHz Switching
TO-263 AA (IXGA)
G
S
D (Tab)
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped Inductive Load
PC
TC = 25°C
TO-220AB (IXGP)
Maximum Ratings
1200
1200
V
V
±20
±30
V
V
22
12
60
A
A
A
ICM = 24
VCE ≤ 0.8 • VCES
A
100
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
10..65 / 2.2..14.6
1.13 / 10
N/lb.
Nm/lb.in.
2.5
3.0
6.0
g
g
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
Weight
TO-263
TO-220
TO-247
G
G
BVCES
IC
= 250μA, VGE = 0V
1200
VGE(th)
IC
= 250μA, VCE = VGE
2.5
ICES
VCE = VCES, VGE = 0V
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= IC90, VGE = 15V, Note 1
TJ = 125°C
2.40
2.75
D (Tab)
D
= Drain
Tab = Drain
Features
z
z
Optimized for Low Conduction Losses
International Standard Packages
Advantages
5.0
V
10
275
μA
μA
±100
nA
3.0
V
V
z
z
z
z
z
z
z
z
z
© 2010 IXYS CORPORATION, All Rights Reserved
S
High Power Density
Low Gate Drive Requirement
Applications
V
TJ = 125°C
D
G = Gate
S = Source
z
Characteristic Values
Min.
Typ.
Max.
D (Tab)
TO-247 (IXGH)
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified
DS
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
DS100212B(11/10)
IXGA12N120A3 IXGP12N120A3
IXGH12N120A3
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
IC = IC90, VCE = 10V, Note 1
IC(on)
VGE = 10V, VCE = 10V, Note 1
Characteristic Values
Min.
Typ.
Max.
5.2
Cies
Coes
S
44
A
550
pF
VCE = 25V, VGE = 0V, f = 1MHz
30
pF
8
pF
20.4
nC
3.1
nC
8.5
nC
35
140
62
1035
ns
ns
ns
ns
35
ns
VCE = 960V, RG = 10Ω
167
70
1475
ns
ns
ns
TO-247
TO-220
0.21
0.50
Cres
Qg
Qge
IC = IC90, VGE = 15V, VCE = 600V
Qgc
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
td(on)
Resistive Switching Times, TJ = 125°C
tr
td(off)
tf
IC = IC90, VGE = 15V
VCE = 960V, RG = 10Ω
IC = IC90, VGE = 15V
RthJC
RthCS
Note
TO-263 Outline
8.8
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
1.25 °C/W
°C/W
°C/W
TO-220 Outline
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
TO-247 Outline
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Emitted
2 - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1 = Gate
2 = Collector
Pins: 1 - Gate
3 = Emitter
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGA12N120A3 IXGP12N120A3
IXGH12N120A3
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
24
70
VGE = 15V
13V
11V
10V
9V
20
VGE = 15V
60
8V
13V
50
IC - Amperes
IC - Amperes
16
7V
12
8
6V
11V
40
10V
9V
30
8V
20
7V
4
10
5V
0
6V
5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5
10
15
VCE - Volts
25
30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
24
1.8
VGE = 15V
13V
11V
10V
9V
VGE = 15V
I
= 24A
C
1.6
8V
VCE(sat) - Normalized
20
IC - Amperes
20
16
7V
12
8
6V
4
1.4
1.2
I
C
= 12A
1.0
0.8
I
C
= 6A
5V
0
0.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-50
-25
0
VCE - Volts
25
50
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
100
125
150
Fig. 6. Input Admittance
35
6.5
TJ = 25ºC
6.0
30
TJ = - 40ºC
25ºC
125ºC
5.5
25
4.5
I
C
IC - Amperes
5.0
VCE - Volts
75
TJ - Degrees Centigrade
= 24A
4.0
3.5
12A
3.0
20
15
10
6A
2.5
5
2.0
1.5
0
5
6
7
8
9
10
11
12
VGE - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
13
14
15
3
4
5
6
VGE - Volts
7
8
9
IXGA12N120A3 IXGP12N120A3
IXGH12N120A3
Fig. 7. Transconductance
Fig. 8. Gate Charge
12
16
TJ = - 40ºC
10
8
125ºC
VGE - Volts
g f s - Siemens
25ºC
6
4
14
VCE = 600V
12
I G = 10mA
I C = 12A
10
8
6
4
2
2
0
0
0
5
10
15
20
25
30
35
40
0
2
4
6
IC - Amperes
8
10
12
14
16
Fig. 9. Reverse-Bias Safe Operating Area
22
Fig. 10. Capacitance
24
Capacitance - PicoFarads
Cies
20
IC - Amperes
20
1,000
28
16
12
8
TJ = 125ºC
4
18
QG - NanoCoulombs
100
Coes
10
Cres
RG = 10Ω
dv / dt < 10V / ns
0
200
f = 1 MHz
1
300
400
500
600
700
VCE - Volts
800
900
1000
1100
1200
0
5
10
Fig. 11. Maximum Transient Thermal Impedance
15
20
25
30
35
40
VCE - Volts
10.00
Fig. 11. Maximum Transient Thermal Impedance
aaaaaa
3.00
Z(th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
IXGA12N120A3 IXGP12N120A3
IXGH12N120A3
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
240
240
RG = 10Ω , VGE = 15V
RG = 10Ω , VGE = 15V
220
VCE = 960V
200
I
C
t r - Nanoseconds
t r - Nanoseconds
220
= 24A
180
160
I
140
C = 12A
VCE = 960V
200
TJ = 125ºC
180
160
TJ = 25ºC
140
120
120
100
100
25
35
45
55
65
75
85
95
105
115
6
125
8
10
12
14
260
td(on) - - - 120
TJ = 125ºC, VGE = 15V
100
I C = 24A
80
I
C
= 12A
180
60
160
40
t f - Nanoseconds
220
t d(on) - Nanoseconds
t r - Nanoseconds
22
24
100
1500
tf
td(off) - - - -
1400
VCE = 960V
90
RG = 10Ω, VGE = 15V
80
1300
70
I C = 12A
1200
60
1100
50
I C = 24A
1000
40
900
140
0
30
60
90
120
150
180
210
240
270
20
300
30
800
25
35
45
55
RG - Ohms
RG = 10Ω, VGE = 15V
1800
100
1700
80
1400
70
TJ = 25ºC
1200
60
30
1100
14
16
18
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
20
22
24
td(off) - - - -
20
125
600
TJ = 125ºC, VGE = 15V
I
C
500
= 12A
400
300
I C = 24A
1300
1200
600
tf
1400
40
12
115
1500
800
10
105
700
1600
50
8
95
VCE = 960V
1000
6
85
200
t d(off) - Nanoseconds
90
VCE = 960V
TJ = 125ºC
t d(off) - Nanoseconds
t f - Nanoseconds
td(off) - - - -
110
t f - Nanoseconds
tf
1600
75
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
2200
1800
65
TJ - Degrees Centigrade
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
2000
t d(off) - Nanoseconds
VCE = 960V
200
20
1600
140
tr
18
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
240
16
IC - Amperes
TJ - Degrees Centigrade
100
0
30
60
90
120
150
180
210
240
270
0
300
RG - Ohms
IXYS REF: G_12N120A3(2M)02-11-10
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