Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 40 A I C90 TC = 90°C 20 A I CM TC = 25°C, 1 ms 80 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH ICM = 40 @ 0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V TO-247 AD (IXGH) G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V V 5 V l l l TJ = 25°C TJ = 125°C 20N60 20N60A 200 1 µA mA ±100 nA 2.5 3.0 V V l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density l l © 1996 IXYS All rights reserved 91511F (3/96) IXGH 20N60 IXGM 20N60 IXGH 20N60A IXGM 20N60A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 6 14 S 1500 pF 200 pF Cres 40 pF Qg 100 120 nC 20 30 nC 60 90 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc Eoff Inductive load, T J = 25°°C IC = IC90 , VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 82 Ω Switching times may increase for VCE (Clamp) > 0.8 • V CES, 20N60A higher TJ or increased RG 20N60A td(on) Inductive load, TJ = 25°°C 100 ns tri IC = IC90, VGE = 15 V, L = 300 µH 200 ns 2 mJ td(on) tri td(off) tfi Eon td(off) tfi Eoff VCE = 0.8 VCES, RG = R off = 82 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • V CES, higher TJ or increased RG 100 ns 200 ns 600 ns 200 ns 1.5 mJ 900 1500 ns 20N60 20N60A 530 250 2000 600 ns ns 20N60 20N60A 3.2 2.0 RthCK 1 = Gate 2 = Collector 3 = Emitter Tab = Collector mJ mJ 0.83 K/W RthJC TO-247 AD Outline 0.25 TO-204AE Outline K/W IXGH 20N60 and IXGH 20N60A characteristic curves are located on the IXGH 20N60U1 and IXGH 20N60AU1 data sheets. 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025