IXYS IXST30N60C

VCES
High Speed IGBT
IXSH/IXST 30N60B
IXSH/IXST 30N60C
ICES
tfi
600 V 2.0 V 140 ns
600 V 2.5 V 70 ns
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
55
A
IC90
TC = 90°C
ICM
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7 Ω
Clamped inductive load, VCC= 0.8 VCES
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 Ω, non repetitive
PC
TC = 25°C
30
A
110
A
ICM = 60
@ 0.8 VCES
A
10
µs
200
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
G
G = Gate
S = Source
TO-247
TO-268
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
6
4
g
g
300
°C
l
l
l
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
IC
= 250 µA, VGE = 0 V
600
VGE(th)
IC
= 2.5 mA, VCE = VGE
4
ICES
VCE = 0.8 VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
VGE = 15 V; IC = IC90
© 2001 IXYS All rights reserved
International standard packages
Short Circuit SOA capability
High frequency IGBT
New generation HDMOSTM process
Applications
l
Symbol
TAB = Drain
Features
l
Weight
(TAB)
S
TJ = 25°C
TJ = 125°C
30N60B
30N60C
l
l
l
l
V
7
V
100
1
µA
mA
±100
nA
l
2.0
2.5
V
V
l
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
l
l
Easy to mount with 1 screw
(isolated mounting screw hole)
Surface mountable, high power case
style
Reduce assembly time and cost
High power density
98519B (11/01)
IXSH/IXST 30N60B
IXSH/IXST 30N60C
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC
= IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
10
S
3100
pF
240
pF
30
pF
100
nC
30
nC
Qgc
38
nC
td(on)
30
ns
30
ns
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
IC
= IC90, VGE = 15 V, VCE = 0.5 VCES
tri
Inductive load, TJ = 25°°C
td(off)
IC
= IC90, VGE = 15 V
VCE = 0.8 VCES, RG = 4.7 Ω
Note 1
30N60B
30N60C
150
90
270
150
ns
ns
30N60B
30N60C
140
70
270
120
ns
ns
30N60B
30N60C
1.5
0.7
2.5 mJ
1.2 mJ
35
ns
35
ns
0.5
mJ
30N60B
30N60C
270
150
ns
ns
tfi
30N60B
30N60C
250
140
ns
Eoff
30N60B
30N60C
2.5
1.2
mJ
mJ
tfi
Eoff
td(on)
tri
Eon
td(off)
Inductive load, TJ = 125°°C
IC
= IC90, VGE = 15 V
VCE = 0.8 VCES, RG = 4.7 Ω
Note 1
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-268 Outline
0.62 K/W
RthJC
RthCK
TO-247 AD Outline
(TO-247)
0.25
K/W
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG.
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXSH/IXST 30N60B
IXSH/IXST 30N60C
Fig.1 Saturation Characteristics
Fig.2 Output Characterstics
200
100
VGE = 15V
TJ = 25°C
TJ = 25°C VGE = 15V
13V
160
IC - Amperes
80
IC - Amperes
11V
13V
11V
60
40
9V
120
80
7V
9V
40
20
7V
5V
0
0
0
1
2
3
4
0
5
2
4
8
10
125
150
VCE - Volts
VCE - Volts
Fig.3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
Fig.4 Temperature Dependence
of Output Saturation Voltage
1.6
120
VGS=15V
TJ = 125°C
VCE (sat) - Normalized
80
11V
60
40
IC = 60A
VGE = 15V
13V
100
IC - Amperes
6
9V
20
1.4
1.2
IC = 30A
1.0
IC = 15A
0.8
7V
0.6
0
0
2
4
6
8
25
10
50
75
VCE - Volts
TJ - Degrees C
Fig.5 Input Admittance
140
100
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
10000
VCE = 10V
f = 1Mhz
Capacitance - pF
IC - Amperes
120
100
80
60
TJ = 125°C
40
20
Ciss
1000
Coss
100
Crss
TJ = 25°C
10
0
4
6
8
10
VGE - Volts
© 2001 IXYS All rights reserved
12
14
16
0
5
10
15
20
25
VCE-Volts
30
35
40
IXSH/IXST 30N60B
IXSH/IXST 30N60C
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
1.5
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on RG
7.5
2.0
TJ = 125°C
E(ON)
E(OFF)
0.5
2.5
E(ON) - millijoules
E(ON) - millijoules
5.0
IC = 60A
1.5
6
E(ON)
1.0
4
E(ON)
IC = 30A
E(OFF)
0.5
2
E(ON)
E(OFF)
IC = 15A
0.0
0
20
40
0.0
0.0
80
60
0
0
10
Fig.9 Gate Charge Characteristic Curve
30
40
50
Fig.10 Turn-Off Safe Operating Area
100
IC =30A
VCE = 300V
IC - Amperes
12
VGE - Volts
20
RG - Ohms
IC - Amperes
15
E(OFF) - millijoules
1.0
E(OFF) - milliJoules
RG = 10Ω
8
E(OFF)
TJ = 125°C
9
6
TJ = 125°C
10
RG = 4.7Ω
dV/dt < 5V/ns
1
3
0
0.1
0
25
50
75
100
125
0
100
Qg - nanocoulombs
200
300
400
500
600
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
ZthJC (K/W)
D=0.2
0.1 D=0.1
D=0.05
D=0.02
0.01
D=0.01
D = Duty Cycle
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025