MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS(on) = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 12 A IDM T C = 25°C, pulse width limited by TJM 48 A PD T C = 25°C 300 W -55 ... +150 °C TJM 150 °C T stg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) G G = Gate, S = Source, D = Drain, TAB = Drain °C 300 Features l l l l l Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 VDC, VDS = 0 I DSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2 TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 4.5 V ±100 nA 250 1 µA mA 0.90 Ω International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91593E(5/96) 1-4 IXTH 12N90 IXTM 12N90 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss t d(on) 6 12 S 4500 pF 315 pF 65 pF 20 50 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 33 50 ns td(off) RG = 2 Ω, (External) 63 100 ns 32 50 ns 145 170 nC 30 45 nC 55 80 nC tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC 0.42 R thCK 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive; pulse width limited by TJM 48 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V TO-247 AD (IXTH) Outline 1 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AA (IXTM) Outline 900 V ns Pins Dim. 1 - Gate 2 - Source Case - Drain Millimeter Min. Max. 6.4 11.4 3.42 .97 1.09 22.22 10.67 11.17 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 L 7.93 ∅ p 3.84 4.19 ∅p 1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 A A1 ∅b ∅D e e1 © 2000 IXYS All rights reserved 2 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 12N90 IXTM 12N90 Fig. 1 Output Characteristics Fig. 2 Input Admittance 18 18 TJ = 25°C 16 ID - Amperes 14 VGS = 10V 8V 12 10 8 6 14 ID - Amperes 16 7V 12 10 TJ = 25°C 8 6 4 4 2 2 0 0 0 2 4 6 8 10 12 0 1 2 3 VDS - Volts 5 6 7 8 9 10 VGS - Volts Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance 1.4 2.50 TJ = 25°C 2.25 1.3 1.2 VGS = 10V 1.1 VGS = 15V 1.0 RDS(on) - Normalized RDS(on) - Normalized 4 2.00 1.75 1.50 ID = 6.5A 1.25 1.00 0.75 0.9 0.50 -50 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -25 0 ID - Amperes 75 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 18 16 BV/VG(th) - Normalized 1.1 14 ID - Amperes 50 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 12N90 12 10 10N90 8 6 4 BVCES VGS(th) 1.0 0.9 0.8 0.7 0.6 2 0 -50 25 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXTH 12N90 IXTM 12N90 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 10 ID - Amperes 8 VGE - Volts 10µs VDS = 450V ID = 13A IG = 10mA 6 4 100µs 10 Limited by RDS(on) 1ms 10ms 1 100ms 2 0 0.1 0 25 50 75 100 125 150 1 10 100 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage 4500 18 Ciss 4000 16 3500 14 3000 ID - Amperes Capacitance - pF 1000 f = 1 MHz VDS = 25V 2500 2000 1500 1000 5 10 8 TJ = 125°C 6 TJ = 25°C 2 Crss 0 0 10 4 Coss 500 12 15 20 0 0.0 25 0.2 VCE - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4