Preliminary Technical Information IXTH130N20T TrenchHVTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1MΩ 200 200 V V VGSM Transient ± 30 V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 130 75 320 A A A IA EAS TC = 25°C TC = 25°C 4 1.0 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns Pd TC = 25°C 830 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque Weight = 200V = 130A Ω ≤ 16mΩ TO-247 G D G = Gate S = Source (TAB) S D = Drain TAB = Drain Features z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages Easy to mount z Space savings z High Power density z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1 TJ = 150°C © 2007 IXYS CORPORATION, All rights reserved V 5.0 V ± 200 nA 25 500 μA μA 16 mΩ Applications z DC-DC converters z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor control z High speed power switching applications z DC choppers z Battery chargers DS99846(06/07) IXTH130N20T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10V; ID = 60A, Note 1 70 Ciss Coss TO-247 Outline 120 S 8800 pF 970 pF 122 pF VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching, 25°°C 25 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18 ns td(off) RG = 2.0Ω (External) 57 ns 22 ns 150 nC 44 nC 42 nC tf Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 25A Qgd 0.18 °C/W RthJC RthCS °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C unless otherwise specified) Min. Characteristic Values Typ. Max. IS VGS = 0V 130 A ISM Pulse width limited by TJM 320 A VSD IF = 50A, VGS = 0V, Note 1 1.0 V trr IF = 65A, -di/dt = 100A/μs 150 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC ns VR = 100V, VGS = 0V Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %; PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH130N20T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 280 130 VGS = 10V 8V 7V 120 110 VGS = 10V 9V 8V 240 100 ID - Amperes ID - Amperes 7V 200 90 80 70 6V 60 50 40 160 120 6V 80 30 20 40 5V 10 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2.2 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 150ºC Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature 20 3.5 130 VGS = 10V 8V 7V 120 110 VGS = 10V 3.0 RDS(on) - Normalized 100 ID - Amperes 90 6V 80 70 60 50 40 5V 2.5 I D = 130A 2.0 I D = 65A 1.5 30 1.0 20 10 0 0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -50 6 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 4.0 VGS = 10V 3.5 External Lead Current Limit 80 TJ = 175ºC 60 ID - Amperes RDS(on) - Normalized 70 3.0 2.5 2.0 50 40 30 1.5 20 1.0 TJ = 25ºC 10 0 0.5 0 40 80 120 160 I D - Amperes © 2007 IXYS CORPORATION, All rights reserved 200 240 280 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH130N20T Fig. 7. Input Admittance Fig. 8. Transconductance 160 180 140 160 TJ = - 40ºC 140 120 g f s - Siemens ID - Amperes 25ºC TJ = 150ºC 25ºC - 40ºC 100 80 60 120 100 80 150ºC 60 40 40 20 20 0 0 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 0 6.6 20 40 60 VGS - Volts 80 100 120 140 160 180 135 150 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 VDS = 100V 9 250 I D = 25A 8 VGS - Volts IS - Amperes I G = 10mA 7 200 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 15 30 45 60 75 90 105 120 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1.00 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.10 0.01 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.00 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH130N20T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 20 20 RG = 2Ω 19 19 VGS = 15V 18 TJ = 25ºC 18 t r - Nanoseconds t r - Nanoseconds VDS = 100V 17 16 15 14 I D = 130A 13 I D = 65A 17 16 V GS = 15V 14 V DS = 100V 13 12 12 11 11 10 RG = 2Ω 15 TJ = 125ºC 10 25 35 45 55 65 75 85 95 105 115 125 30 40 50 60 70 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 30 29 120 130 80 27 25 26 20 25 15 24 VDS = 100V 75 21 70 I D = 130A 20 65 19 18 I D = 65A 17 60 16 15 - Nanoseconds I D = 130A, 65A RG = 2Ω, V GS = 15V 22 d( of f ) 28 23 t 35 t d ( o n ) - Nanoseconds VDS = 100V t r - Nanoseconds 110 td(off) - - - - tf 24 TJ = 125ºC, V GS = 15V 30 100 25 td(on) - - - - t f - Nanoseconds 40 90 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 45 tr 80 I D - Amperes 55 I D = 130A 14 10 23 2 3 4 5 6 7 8 9 13 10 25 35 45 RG - Ohms 28 95 50 115 125 105 200 td(off) - - - - tf 80 70 22 75 70 18 60 140 I D = 65A, 130A 120 40 100 30 80 55 20 60 50 130 10 65 60 14 160 50 TJ = 125ºC 16 VDS = 100V - Nanoseconds 20 180 TJ = 125ºC, VGS = 15V d( of f ) TJ = 25ºC t f - Nanoseconds 80 t V DS = 100V 85 t d ( o f f ) - Nanoseconds t f - Nanoseconds 85 90 td(off) - - - - RG = 2Ω, VGS = 15V 24 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 90 26 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 55 TJ = 25ºC 12 30 40 50 60 70 80 90 100 I D - Amperes © 2007 IXYS CORPORATION, All rights reserved 110 120 40 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_130N20T(8W) 06-07-07