IXYS IXTH13N80 Megamosfet Datasheet

VDSS
IXTH / IXTM 11N80 800 V
IXTH / IXTM 13N80 800 V
MegaMOSTMFET
I D25
RDS(on)
11 A 0.95 Ω
13 A 0.80 Ω
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
V DSS
TJ = 25°C to 150°C
800
V
V DGR
TJ = 25°C to 150°C; RGS = 1 MΩ
800
V
V GS
Continuous
±20
V
V GSM
Transient
±30
V
I D25
TC = 25°C
I DM
TC = 25°C, pulse width limited by TJM
11
13
44
52
A
A
A
A
PD
TC = 25°C
300
W
-55 ... +150
°C
T JM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
11N80
13N80
11N80
13N80
Mounting torque
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G
G = Gate,
S = Source,
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
°C
300
Features
●
●
●
●
●
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
V GS(th)
VDS = VGS, ID = 250 µA
I GSS
VGS = ±20 VDC, VDS = 0
I DSS
VDS = 0.8 • VDSS
VGS = 0 V
R DS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs,
800
2
TJ = 25°C
TJ = 125°C
11N80
13N80
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
V
4.5
V
±100
nA
250
1
µA
mA
0.95
0.80
Ω
Ω
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Applications
●
●
V DSS
D = Drain,
TAB = Drain
●
●
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
●
●
●
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
915380F (5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
IXTH 11N80 IXTH 13N80
IXTM 11N80 IXTM 13N80
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = 10 V; ID = 0.5 • ID25, pulse test
14
S
4500
pF
310
pF
Crss
65
pF
td(on)
20
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
8
50
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
33
50
ns
td(off)
RG = 2 Ω, (External)
63
100
ns
32
50
ns
145
170
nC
30
45
nC
55
80
nC
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Qgd
RthJC
0.42
RthCK
0.25
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
11N80
13N80
11
13
A
A
I SM
Repetitive;
pulse width limited by TJM
11N80
13N80
44
52
A
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
800
1
2
3
ns
tr
tf
TO-247 AD (IXTH) Outline
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
TO-204AA (IXTM) Outline
ns
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Millimeter
Min. Max.
A
6.4
11.4
A1
3.42
∅b
.97
1.09
∅D
22.22
e
10.67 11.17
e1
5.21
5.71
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
L
7.93
∅p
3.84
4.19
∅p1 3.84
4.19
q
30.15 BSC
R
13.33
R1
4.77
s
16.64 17.14
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675
IXTH 11N80
IXTM 11N80
Fig. 2 Input Admittance
18
18
16
16
14
14
12
12
ID - Amperes
ID - Amperes
Fig. 1 Output Characteristics
10
8
6
TJ = 25°C
VDS = 10V
10
8
6
4
4
2
2
0
0
0
2
4
6
8
10
12
0
1
2
3
VDS - Volts
1.40
6
7
8
9
10
2.50
2.25
RDS(on) - Normalized
1.30
RDS(on) - Ohms
5
Fig. 4 Temperature Dependence
of Drain to Source Resistance
TJ = 25°C
1.35
4
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.25
1.20
VGS = 10V
1.15
1.10
1.05
1.00
2.00
1.75
1.50
1.25
1.00
0.75
0.95
0.90
0
2
4
6
0.50
-50
8 10 12 14 16 18 20 22 24 26
-25
0
Fig. 5 Drain Current vs.
Case Temperature
50
75
100
125
150
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
18
1.2
16
1.1
BV/VG(th) - Normalized
V GS(th)
14
12
10
8
6
4
1.0
0.9
0.8
0.7
0.6
2
0
-50
25
TJ - Degrees C
ID - Amperes
ID - Amperes
IXTH 13N80
IXTM 13N80
-25
0
25
50
75
100
125
150
TC - Degrees C
0.5
-50
-25
0
25
50
75
100
125
150
TJ - Degrees C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
IXTH 11N80
IXTM 11N80
Fig.7 Gate Charge Characteristic Curve
IXTH 13N80
IXTM 13N80
Fig.8 Forward Bias Safe Operating Area
10
10µs
100µs
ID - Amperes
8
VGE - Volts
Limited by RDS(on)
V DS = 400V
ID = 13A
IG = 10mA
6
4
10
1ms
10ms
1
100ms
2
0
0.1
0
25
50
75
100
125
150
1
10
Gate Charge - nCoulombs
1000
VDS - Volts
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
4500
18
Ciss
4000
16
3500
14
3000
ID - Amperes
Capacitance - pF
100
f = 1 MHz
V DS = 25V
2500
2000
1500
1000
5
10
8
6
T J = 125°C
TJ = 25°C
2
Crss
0
0
10
4
Coss
500
12
15
20
0
0.0
25
0.2
VCE - Volts
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
1
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
0.1
1
10
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