Preliminary Technical Information IXTH240N055T IXTQ240N055T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ VGSM 55 55 V V Transient ± 20 V ID25 ILRMS IDM TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM 240 75 650 A A A IAR E AS TC = 25° C TC = 25° C 25 1.0 A J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤175° C, RG = 5 Ω 3 V/ns PD TC = 25° C 480 W -55 ... +175 175 -40 ... +175 °C °C °C 300 260 °C °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque Weight TO-3P TO-247 1.13 / 10 Nm/lb.in. 5.5 6 Symbol Test Conditions (TJ = 25° C unless otherwise specified) G D (TAB) S TO-3P (IXTQ) TJ TJM Tstg TL TSOLD TO-247 (IXTH) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 55 VGS(th) VDS = VGS, ID = 250 µA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 V TJ = 150° C 2.7 4.0 V ± 200 nA 5 250 µA µA 3.6 mΩ G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS99715 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTH240N055T IXTQ240N055T Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 75 132 S 7600 pF Ciss Coss TO-247AD Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Max. 1240 pF 260 pF 40 ns Crss td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 54 ns td(off) RG = 5 Ω (External) 63 ns 75 ns 170 nC 32 nC 48 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 1 RthCS Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Source-Drain Diode Symbol Test Conditions TJ = 25° C unless otherwise specified) Min. Characteristic Values Typ. Max. IS VGS = 0 V 240 A ISM Pulse width limited by TJM 650 A VSD IF = 50 A, VGS = 0 V, Note 1 1.2 V t rr IF = 25 A, -di/dt = 100 A/µs 70 ns 2 - Drain Tab - Drain Dim. °C/W 0.25 3 Terminals: 1 - Gate 3 - Source 0.31 °C/W RthJC 2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline VR = 25 V, VGS = 0 V Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: PRELIMINARY TECHNICAL INFORMATION 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTH240N055T IXTQ240N055T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 330 VGS = 10V 9V 8V 7V 180 160 270 7V 240 ID - Amperes 140 ID - Amperes VGS = 10V 8V 300 120 100 6V 80 60 6V 180 150 120 90 5V 40 210 60 20 5V 30 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.7 0.5 1 1.5 2.5 3 3.5 4 4.5 5 Fig. 4. RDS(on) Normalized to ID = 120A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 2.2 200 VGS = 10V 9V 8V 7V 160 140 120 6V 100 VGS = 10V 2.0 RDS(on) - Normalized 180 ID - Amperes 2 VDS - Volts VDS - Volts 80 5V 60 1.8 1.6 I D = 240A 1.4 I D = 120A 1.2 1.0 40 0.8 20 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 120A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.2 140 2 120 External Lead Current Limit for TO-263 (7-Lead) 1.8 100 VGS = 10V 15V - - - - ID - Amperes RDS(on) - Normalized TJ = 175ºC 1.6 1.4 1.2 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 60 40 TJ = 25ºC 20 1 0 0.8 0 40 80 120 160 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH240N055T IXTQ240N055T Fig. 8. Transconductance Fig. 7. Input Admittance 270 200 240 180 160 210 180 g f s - Siemens ID - Amperes TJ = - 40ºC 150 120 TJ = 150ºC 25ºC - 40ºC 90 25ºC 140 120 150ºC 100 80 60 60 40 30 20 0 0 3 3.5 4 4.5 5 5.5 6 6.5 0 40 80 120 VGS - Volts 200 240 280 Fig. 10. Gate Charge 300 10 270 9 240 8 210 7 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 180 150 160 I D - Amperes TJ = 150ºC 120 TJ = 25ºC 90 VDS = 27.5V I D = 25A I G = 10mA 6 5 4 3 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads C iss C oss 0.10 C rss f = 1 MHz 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH240N055T IXTQ240N055T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 57 60 RG = 5Ω 54 57 VGS = 10V 54 VDS = 30V t r - Nanoseconds t r - Nanoseconds 51 48 45 42 I D = 50A 39 TJ = 25ºC 51 RG = 5Ω 48 VGS = 10V VDS = 30V 45 42 39 I D = 25A 36 36 33 TJ = 125ºC 33 30 30 25 35 45 55 65 75 85 95 105 115 125 25 30 35 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 66 VDS = 30V t r - Nanoseconds 74 58 120 54 100 50 80 46 I D = 50A 25A 60 42 40 t d ( o n ) - Nanoseconds 140 38 20 34 4 6 8 10 12 14 16 18 72 88 70 84 68 66 76 64 62 68 60 64 58 25 20 35 45 85 95 105 115 60 125 92 72 88 TJ = 25ºC, 125ºC 84 td(off) - - - - 80 76 VDS = 30V 72 TJ = 25ºC, 125ºC 340 td(off) - - - - tf TJ = 125ºC, VGS = 10V 200 300 I D = 25A VDS = 30V 175 260 t f - Nanoseconds t f - Nanoseconds 74 62 75 t d ( o f f ) - Nanoseconds 96 64 65 225 t d ( o f f ) - Nanoseconds 76 RG = 5Ω, VGS = 10V 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 100 66 72 I D = 50A TJ - Degrees Centigrade 78 tf 80 I D = 25A Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 68 92 VDS = 30V RG - Ohms 70 96 RG = 5Ω, VGS = 10V t d ( o f f ) - Nanoseconds I D = 50A 25A 100 td(off) - - - - tf 76 62 TJ = 125ºC, VGS = 10V 50 78 td(on) - - - - t f - Nanoseconds 160 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 180 tr 40 I D - Amperes 150 220 I D = 50A 125 180 100 140 75 100 68 60 64 58 60 24 28 32 36 40 44 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 48 50 60 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_240N055T (61) 11-16-06-B.xls