IXYS IXTH450P2 Polar2tm power mosfets n-channel enhancement mode avalanche rated Datasheet

IXTP450P2
IXTQ450P2
IXTH450P2
Polar2TM
Power MOSFETs
VDSS
ID25
=
=
≤
=
RDS(on)
trr(typ)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
500V
16A
Ω
330mΩ
400ns
TO-220AB (IXTP)
G
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
500
500
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
16
48
A
A
IA
EAS
TC = 25°C
TC = 25°C
16
750
A
mJ
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
PD
TC = 25°C
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
3.0
5.5
6.0
g
g
g
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Md
Mounting Torque
Weight
TO-220
TO-3P
TO-247
Tab
TO-3P (IXTQ)
Symbol
TJ
TJM
Tstg
DS
G
D
S
Tab
TO-247(IXTH)
G
D
Tab
S
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
z
z
z
z
Avalanche Rated
Fast Intrinsic Diode
Dynamic dv/dt Rated
Low Package Inductance
Advantages
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
500
VGS(th)
VDS = VGS, ID = 250μA
2.5
IGSS
VGS = ± 30V, VDS = 0V
± 100 nA
IDSS
VDS = VDSS, VGS = 0V
5 μA
25 μA
RDS(on)
z
z
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
V
4.5
V
330 mΩ
Applications
z
z
z
z
z
© 2011 IXYS CORPORATION, All Rights Reserved
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS100241A(10/11)
IXTP450P2 IXTQ450P2
IXTH450P2
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 0.5 • ID25, Note 1
12
Ciss
Coss
20
S
2280
pF
257
pF
30
pF
16
ns
10
ns
50
ns
18
ns
43
nC
18
nC
11
nC
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
RthCS
TO-3P Outline
0.42 °C/W
TO-220
TO-3P & TO-247
0.50
0.25
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
16
A
ISM
Repetitive, Pulse Width Limited by TJM
64
A
VSD
IF = IS, VGS = 0V, Note 1
1.3
V
trr
IF = 16A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
400
TO-247 Outline
ns
1
2
∅P
3
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
e
Terminals: 1 - Gate
3 - Source
TO-220 Outline
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
1 - Gate 2 - Drain
3 - Source
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTP450P2 IXTQ450P2
IXTH450P2
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
16
50
VGS = 10V
7V
14
VGS = 10V
7V
45
40
12
35
ID - Amperes
ID - Amperes
6V
10
8
6
30
25
20
6V
15
4
10
2
5
5V
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
VDS - Volts
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 8A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
16
3.2
VGS = 10V
6V
14
VGS = 10V
2.8
R DS(on) - Normalized
ID - Amperes
12
10
8
6
5V
4
2.4
I D = 16A
2.0
I D = 8A
1.6
1.2
0.8
2
4V
0
0.4
0
1
2
3
4
5
6
7
8
9
10
11
-50
12
-25
0
25
VDS - Volts
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 8A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.6
18
VGS = 10V
16
TJ = 125ºC
3.2
12
ID - Amperes
R DS(on) - Normalized
14
2.8
2.4
2.0
TJ = 25ºC
10
8
6
1.6
4
1.2
2
0.8
0
0
5
10
15
20
25
30
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
35
40
45
50
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXTP450P2 IXTQ450P2
IXTH450P2
Fig. 7. Input Admittance
Fig. 8. Transconductance
40
50
TJ = - 40ºC
35
40
TJ = 125ºC
25ºC
- 40ºC
25
g f s - Siemens
ID - Amperes
30
20
15
25ºC
30
125ºC
20
10
10
5
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
5
10
15
VGS - Volts
20
25
30
35
40
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
50
10
45
9
VDS = 250V
40
8
I G = 10mA
35
7
VGS - Volts
IS - Amperes
I D = 8A
30
25
20
6
5
4
TJ = 125ºC
15
3
TJ = 25ºC
10
2
5
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
5
10
VSD - Volts
15
20
25
30
35
40
45
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
100
RDS(on) Limit
25µs
100µs
1,000
10
ID - Amperes
Capacitance - PicoFarads
Ciss
Coss
100
1
Crss
TJ = 150ºC
1ms
TC = 25ºC
Single Pulse
f = 1 MHz
10
0.1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXTP450P2 IXTQ450P2
IXTH450P2
Fig. 13. Maximum Transient Thermal Impedance
Z (th )J C - ºC / W
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_450P2(5J-N45) 10-17-11
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