IXYS IXTK90P20P Polarptm power mosfets p-channel enhancement mode avalanche rated Datasheet

I XTK90P20P
PolarPTM
Power MOSFETs
VDSS
ID25
IXTX90P20P
=
=
≤
RDS(on)
- 200V
- 90A
Ω
44mΩ
P-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXTK)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
- 200
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
- 200
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
IDM
TC = 25°C, Pulse Width Limited by TJM
IA
EAS
TC = 25°C
TC = 25°C
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
PD
TC = 25°C
- 90
A
- 270
A
- 90
3.5
A
J
10
V/ns
890
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
20..120 / 4.5..27
1.13 / 10
N/lb.
Nm/lb.in.
6
10
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Force
Mounting Torque
Weight
PLUS247
TO-264
(PLUS247)
(TO-264)
G
D
S
Tab
PLUS247 (IXTX)
G
z
z
z
z
VGS = 0V, ID = - 250μA
- 200
VGS(th)
VDS = VGS, ID = -1mA
- 2.0
IGSS
VGS = ±20V, VDS = 0V
±100 nA
IDSS
VDS = VDSS , VGS = 0V
- 50 μA
- 250 μA
z
44 mΩ
z
VGS = -10V, ID = 0.5 • ID25, Note 1
V
z
BVDSS
RDS(on)
z
V
Easy to Mount
Space Savings
High Power Density
Applications
z
z
z
© 2013 IXYS CORPORATION, All Rights Reserved
International Standard Packages
Rugged PolarPTM Process
Avalanche Rated
Fast Intrinsic Diode
Low Package Inductance
Advantages
Characteristic Values
Min.
Typ.
Max.
TJ = 125°C
D = Drain
Tab = Drain
Features
z
- 4.0
Tab
S
G = Gate
S = Source
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
D
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS99933C(01/13)
IXTK90P20P
IXTX90P20P
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ. Max.
gfs
30
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = - 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
51
S
12
nF
2210
pF
250
pF
32
ns
60
ns
89
ns
28
ns
Dim.
205
nC
45
nC
80
nC
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
0.14 °C/W
RthJC
RthCS
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
Note
Characteristic Values
Min. Typ.
Max.
- 90
A
Repetitive, Pulse Width Limited by TJM
- 360
A
IF = - 45A, VGS = 0V, Note 1
- 3.2
V
IF = - 45A, -di/dt = -150A/μs
VR = -100V, VGS = 0V
1:
TO-264 AA Outline
315
ns
6.6
μC
- 42
A
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS 247TM Outline
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTK90P20P
IXTX90P20P
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
-90
-240
VGS = -10V
- 9V
- 8V
-80
VGS = -10V
- 9V
-200
-70
- 8V
- 7V
-160
ID - Amperes
ID - Amperes
-60
-50
- 6V
-40
-30
-120
- 7V
-80
-20
- 5V
- 6V
-40
- 5V
-10
0
0
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
0
-10
-20
-25
-30
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 4. RDS(on) Normalized to ID = - 45A Value vs.
Junction Temperature
2.4
VGS = -10V
- 9V
- 8V
-80
VGS = -10V
2.0
-70
R DS(on) - Normalized
- 7V
-60
-50
- 6V
-40
-30
-20
I D = - 90A
1.6
I D = - 45A
1.2
0.8
- 5V
-10
0
0.4
0
-1
-2
-3
-4
-5
-6
-7
-8
-50
-25
0
VDS - Volts
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = - 45A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
-100
2.4
-90
VGS = -10V
-80
TJ = 125ºC
2.2
-70
2.0
ID - Amperes
R DS(on) - Normalized
-15
VDS - Volts
-90
ID - Amperes
-5
VDS - Volts
1.8
1.6
1.4
-60
-50
-40
-30
1.2
-20
TJ = 25ºC
1.0
-10
0
0.8
0
-30
-60
-90
-120
-150
ID - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
-180
-210
-240
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXTK90P20P
IXTX90P20P
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
-120
TJ = - 40ºC
25ºC
125ºC
-100
80
70
g f s - Siemens
-80
ID - Amperes
TJ = - 40ºC
90
-60
-40
25ºC
60
50
125ºC
40
30
20
-20
10
0
-3.0
0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
0
-20
-40
-60
VGS - Volts
-80
-100
-120
-140
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
-270
-10
-240
-9
VDS = -100V
I D = - 45A
-8
-210
VGS - Volts
-180
IS - Amperes
I G = -1mA
-7
-150
-120
TJ = 125ºC
-90
-6
-5
-4
-3
TJ = 25ºC
-60
-2
-30
-1
0
-0.5
0
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
0
-4.5
20
40
80
100
120
140
160
180
200
220
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
- 1,000
100,000
f = 1MHz
RDS(on) Limit
TJ = 150ºC
TC = 25ºC
Single Pulse
Ciss
25µs
- 100
10,000
ID - Amperes
Capacitance - PicoFarads
60
QG - NanoCoulombs
VSD - Volts
Coss
100µs
1ms
- 10
1,000
10ms
Crss
DC
100
0
-5
-10
-15
-20
-25
-30
-35
-40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
- 1
- 10
- 100
VDS - Volts
100ms
- 1000
IXTK90P20P
IXTX90P20P
Fig. 13. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_90P20P(B9)03-25-09-D
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