IXYS IXTM12N100 Megamos fet Datasheet

MegaMOSTMFET
IXTH / IXTM 10N100
IXTH / IXTM 12N100
VDSS
ID25
RDS(on)
1000 V
1000 V
10 A
12 A
1.20 Ω
1.05 Ω
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
10N100
12N100
10
12
A
A
IDM
TC = 25°C, pulse width limited by TJM
10N100
12N100
40
48
A
A
PD
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
T stg
-55 ... +150
°C
TJ
Md
Mounting torque
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G
G = Gate,
S = Source,
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
°C
300
Features
l
l
l
l
l
Symbol
D = Drain,
TAB = Drain
Test Conditions
VDSS
VGS = 0 V, ID = 3 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
R DS(on)
VGS = 10 V, ID = 0.5 ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1000
2
TJ = 25°C
TJ = 125°C
10N100
12N100
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
4.5
V
±100
nA
250
1
µA
mA
1.20
1.05
Ω
Ω
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Applications
l
l
l
l
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
l
l
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
91540E(5/96)
1-4
IXTH 10 N100
IXTM 10 N100
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
C iss
C oss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
t d(on)
6
12
S
4000
pF
310
pF
70
pF
21
50
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
33
50
ns
td(off)
RG = 2 Ω, (External)
62
100
ns
32
50
ns
150
170
nC
30
45
nC
55
80
nC
tf
Q g(on)
Q gs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Q gd
R thJC
0.42
R thCK
0.25
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
10N100
12N100
10
12
A
A
ISM
Repetitive;
pulse width limited by TJM
10N100
12N100
40
48
A
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
1000
TO-247 AD (IXTH) Outline
1
2
Terminals: 1 - Gate
3 - Source
3
2 - Drain
Tab - Drain
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185 .209
A1
2.2
2.54
.087 .102
A2
2.2
2.6
.059 .098
b
1.0
1.4
.040 .055
b1
1.65
2.13
.065 .084
b2
2.87
3.12
.113 .123
C
.4
.8
.016 .031
D 20.80 21.46
.819 .845
E
15.75 16.26
.610 .640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
∅ P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170 .216
S
6.15 BSC
242 BSC
TO-204AA (IXTM) Outline
ns
Pins
Dim.
1 - Gate
2 - Source
Case - Drain
Millimeter
Min.
Max.
6.4
11.4
3.42
.97
1.09
22.22
10.67 11.17
5.21
5.71
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
L
7.93
∅ p 3.84
4.19
∅p 1 3.84
4.19
q
30.15 BSC
R
13.33
R1
4.77
s
16.64 17.14
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675
A
A1
∅b
∅D
e
e1
© 2000 IXYS All rights reserved
IXTH 12 N100
IXTM 12 N100
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXTH 10 N100
IXTM 10 N100
Fig. 1 Output Characteristics
20
Fig. 2 Input Admittance
TJ = 25°C
18
20
VGS = 10V
18
7V
16
6V
14
ID - Amperes
ID - Amperes
16
12
10
8
6
5V
14
12
TJ = 25°C
10
8
6
4
4
2
2
0
0
0
5
10
15
20
0
1
2
3
VDS - Volts
5
6
7
8
9
10
Fig. 4 Temperature Dependence
of Drain to Source Resistance
1.5
2.50
TJ = 25°C
2.25
RDS(on) - Normalized
1.4
RDS(on) - Normalized
4
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.3
1.2
VGS = 10V
VGS = 15V
1.1
1.0
2.00
1.75
1.50
ID = 6A
1.25
1.00
0.75
0.9
0
5
10
15
20
0.50
-50
25
-25
0
ID - Amperes
50
75
1.2
18
VGS(th)
BVDSS
1.1
BV/VG(th) - Normalized
16
14
12N100
12
10
10N100
8
100 125 150
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
20
6
4
1.0
0.9
0.8
0.7
0.6
2
0
-50
25
TJ - Degrees C
Fig. 5 Drain Current vs.
Case Temperature
ID - Amperes
IXTH 12 N100
IXTM 12 N100
-25
0
25
50
75
TC - Degrees C
© 2000 IXYS All rights reserved
100 125 150
0.5
-50
-25
0
25
50
75
100 125 150
TJ - Degrees C
3-4
IXTH 10 N100
IXTM 10 N100
Fig.7 Gate Charge Characteristic Curve
IXTH 12 N100
IXTM 12 N100
Fig.8 Forward Bias Safe Operating Area
10
10µs
VDS = 500V
ID = 6A
IG = 10mA
9
8
10 Limited by RDS(on)
ID - Amperes
VGS - Volts
7
6
5
4
3
100µs
1ms
1
10ms
100ms
2
1
0
0.1
0
25
50
75
100
125
150
1
10
Gate Charge - nCoulombs
1000
VDS - Volts
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
4500
20
Ciss
4000
18
16
3500
3000
ID - Amperes
Capacitance - pF
100
f = 1MHz
VDS = 25V
2500
2000
1500
1000
0
5
10
TJ = 125°C
8
6
TJ = 25°C
2
Crss
0
12
4
Coss
500
14
10
15
0
0.0
20
0.2
VDS - Volts
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
1
D=0.5
0.1 D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
4-4
Similar pages