IXYS IXTP102N15T Trench gate power mosfet n-channel enhancement mode avalanche rated Datasheet

Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
TO-263 (IXTA)
G
S
(TAB)
G
D
VDSS
ID25
IXTA102N15T
IXTH102N15T
IXTP102N15T
IXTQ102N15T
TO-3P (IXTQ)
TO-220 (IXTP)
(TAB)
S
RDS(on)
G
= 150V
= 102A
Ω
≤ 18mΩ
G
(TAB)
D S
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C RGS = 1MΩ
150
150
V
V
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
ID25
ILRMS
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
102
75
300
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
51
750
A
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C
10
V/ns
PD
TC = 25°C
455
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13 / 10
Nmlb.in.
10..65/2.2..14.6
N/lb.
2.5
3.0
5.5
6.0
g
g
g
g
D
(TAB)
S
Maximum Ratings
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Md
Mounting Torque
(TO-220, TO-3P, TO-247)
FC
Mounting Force
(TO-263)
Weight
TO-263
TO-220
TO-3P
TO-247
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
G = Gate
S = Source
Features
z
z
z
z
z
VGS = 0V, ID = 250μA
150
z
z
z
z
VGS(th)
VDS = VGS, ID = 1mA
3.0
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
V
5.0
V
Easy to mount
Space savings
High power density
Applications
z
BVDSS
International standard packages
Avalanche rated
Advantages
z
Characteristic Values
Min.
Typ.
Max.
D = Drain
TAB = Drain
z
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
Uninterruptible power supplies
High speed power switching
applications
± 200 nA
TJ = 150°C
© 2008 IXYS CORPORATION, All rights reserved
5 μA
250 μA
18 mΩ
DS99661B(10/08)
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
gfs
50
VDS= 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
Qg(on)
Qgs
VGS= 10V, VDS = 0.5 • VDSS , ID = 25A
Qgd
80
S
5220
pF
685
pF
95
pF
20
ns
14
ns
25
ns
22
ns
87
nC
23
nC
31
nC
0.33 °C/W
RthJC
RthCH
(TO-220)
0.50
°C/W
(TO-3P & TO-247)
0.25
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
102
A
ISM
Repetitive, pulse width limited by TJM
400
A
VSD
IF = 100A, VGS = 0V, Note 1
1.3
V
trr
IRM
QRM
IF = 51A, -di/dt = 100A/μs
97
8.4
409
VR = 75V, VGS = 0V
ns
A
nC
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
TO-263 (IXTA) Outline
TO-247 (IXTH) Outline
∅P
1
2
3
e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
TO-3P (IXTQ) Outline
TO-220 (IXTP) Outline
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
© 2008 IXYS CORPORATION, All rights reserved
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fig. 1. Output Characteristics
@ 25ºC
110
Fig. 2. Extended Output Characteristics
@ 25ºC
300
VGS = 15V
10V
9V
8V
100
90
VGS = 15V
10V
9V
250
200
7V
70
ID - Amperes
ID - Amperes
80
60
50
40
30
8V
150
7V
100
6V
20
50
10
6V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1.6
2
4
6
110
7V
RDS(on) - Normalized
ID - Amperes
14
16
VGS = 10V
2.6
80
70
60
6V
50
40
30
20
2.2
I D = 102A
1.8
I D = 51A
1.4
1.0
0.6
10
5V
0
0.2
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
-50
-25
0
VDS - Volts
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 51A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
80
5.0
VGS = 10V
4.5
External Lead Current Limit
70
TJ = 175ºC
4.0
60
3.5
ID - Amperes
RDS(on) - Normalized
12
3.0
VGS = 15V
10V
9V
8V
90
10
Fig. 4. RDS(on) Normalized to ID = 51A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
100
8
VDS - Volts
VDS - Volts
3.0
2.5
2.0
TJ = 25ºC
50
40
30
20
1.5
10
1.0
0
0.5
0
40
80
120
160
200
240
280
ID - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fig. 7. Input Admittance
Fig. 8. Transconductance
120
160
100
90
g f s - Siemens
120
ID - Amperes
TJ = - 40ºC
110
140
100
80
TJ = 150ºC
25ºC
- 40ºC
60
80
25ºC
70
60
50
150ºC
40
30
40
20
20
10
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
7.5
20
40
60
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
10
275
9
VDS = 75V
250
8
I G = 10mA
120
140
160
80
90
I D = 51A
7
200
VGS - Volts
IS - Amperes
100
Fig. 10. Gate Charge
225
175
150
125
TJ = 150ºC
100
6
5
4
3
75
TJ = 25ºC
2
50
1
25
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
10
20
30
40
50
60
70
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
1000.0
RDS(on) Limit
Ciss
100.0
1,000
ID - Amperes
Capacitance - PicoFarads
80
ID - Amperes
Coss
25µs
100µs
10.0
1ms
100
Crss
1.0
10ms
100ms
TJ = 175ºC
DC
TC = 25ºC
Single Pulse
f = 1 MHz
0.1
10
0
5
10
15
20
25
VDS - Volts
© 2008 IXYS CORPORATION, All rights reserved
30
35
40
1
10
100
1000
VDS - Volts
IXYS REF: F_102N15T(6E)90-30-08
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
18
19
RG = 3.3Ω
18
RG = 3.3Ω
TJ = 125ºC
VDS = 75V
VDS = 75V
t r - Nanoseconds
t r - Nanoseconds
17
VGS = 10V
17
VGS = 10V
16
I
15
D
= 102A
14
I
13
D
= 51A
16
15
14
12
TJ = 25ºC
13
11
12
10
25
35
45
55
65
75
85
95
105
115
50
125
55
60
65
70
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
80
TJ = 125ºC, VGS = 10V
I D = 102A
tf
28
28
RG = 3.3Ω, VGS = 10V
36
27
VDS = 75V
34
50
22
40
20
I D = 51A
18
20
10
0
8
10
12
14
16
18
40
26
32
25
30
I D = 51A
24
28
23
26
14
21
12
20
24
I D = 102A
25
20
35
45
TJ = 125ºC
30
22
26
21
TJ = 25ºC
20
60
65
70
75
80
105
115
20
125
85
90
95
tf
td(off) - - - -
140
TJ = 125ºC, VGS = 10V
VDS = 75V
200
120
I D = 102A
160
100
120
I
D
80
= 51A
80
60
22
40
40
18
100 105
0
ID - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
20
2
4
6
8
10
12
RG - Ohms
14
16
18
20
t d(off) - Nanoseconds
34
td(off) - - - -
RG = 3.3Ω, VGS = 10V
55
95
160
240
38
t d(off) - Nanoseconds
t f - Nanoseconds
25
50
85
280
42
VDS = 75V
75
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
t f - Nanoseconds
26
23
65
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
tf
22
55
RG - Ohms
24
38
td(off) - - - -
22
16
6
105
29
24
4
100
30
60
2
95
30
26
30
90
t d(off) - Nanoseconds
VDS = 75V
70
85
32
t f - Nanoseconds
td(on) - - - -
t d(on) - Nanoseconds
t r - Nanoseconds
tr
80
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
100
90
75
ID - Amperes
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fig. 19. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: F_102N15T(6E)90-30-08
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