IXYS IXTP1R6N50D2 Depletion mode mosfet Datasheet

Preliminary Technical Information
IXTY1R6N50D2
IXTA1R6N50D2
IXTP1R6N50D2
Depletion Mode
MOSFET
VDSX
ID(on)
RDS(on)
N-Channel
=
>
≤
500V
1.6A
2.3Ω
Ω
TO-252 (IXTY)
G
S
D (Tab)
Symbol
Test Conditions
VDSX
TJ = 25°C to 150°C
Maximum Ratings
500
V
VGSX
Continuous
±20
V
VGSM
Transient
±30
V
PD
TC = 25°C
100
W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300
260
°C
°C
1.13 / 10
Nm/lb.in.
0.35
2.50
3.00
g
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque (TO-220)
Weight
TO-252
TO-263
TO-220
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
G
DS
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSX
VGS = - 5V, ID = 250μA
500
VGS(off)
VDS = 25V, ID = 100μA
- 2.0
IGSX
VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
RDS(on)
VGS = 0V, ID = 0.8A, Note 1
ID(on)
VGS = 0V, VDS = 25V, Note 1
- 4.0
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
V
Advantages
V
• Easy to Mount
• Space Savings
• High Power Density
±100 nA
2 μA
25 μA
TJ = 125°C
© 2009 IXYS CORPORATION, All Rights Reserved
2.3
1.6
Ω
A
Applications
•
•
•
•
•
•
Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
DS100179A(12/09)
IXTY1R6N50D2 IXTA1R6N50D2
IXTP1R6N50D2
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
1.00
VDS = 30V, ID = 0.8A, Note 1
Ciss
1.75
S
645
pF
VGS = -10V, VDS = 25V, f = 1MHz
Coss
Crss
td(on)
65
pF
16.5
pF
25
ns
70
ns
35
ns
41
ns
23.7
nC
2.2
nC
13.8
0.50
Resistive Switching Times
tr
VGS = ±5V, VDS = 250V, ID = 0.8A
td(off)
RG = 5Ω (External)
tf
Qg(on)
Qgs
VGS = 5V, VDS = 250V, ID = 0.8A
Qgd
RthJC
RthCS
TO-220
TO-252 AA (IXTY) Outline
Millimeter
Min. Max.
Inches
Min.
Max.
nC
A
A1
2.19
0.89
2.38
1.14
0.086
0.035
0.094
0.045
1.25 °C/W
°C/W
A2
b
0
0.64
0.13
0.89
0
0.025
0.005
0.035
b1
b2
0.76
5.21
1.14
5.46
0.030
0.205
0.045
0.215
c
c1
0.46
0.46
0.58
0.58
0.018
0.018
0.023
0.023
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
E
E1
6.35
4.32
6.73
5.21
0.250
0.170
0.265
0.205
Characteristic Values
Min.
Typ.
Max.
Test Conditions
SOA
VDS = 400V, ID = 0.15A, TC = 75°C, Tp = 5s
60
W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VSD
IF = 1.6A, VGS = -10V, Note 1
trr
IRM
QRM
IF = 1.6A, -di/dt = 100A/μs
VR = 100V, VGS = -10V
Characteristic Values
Min.
Typ.
Max.
0.8
Gate
Drain
Source
Drain
Bottom Side
Dim.
Safe-Operating-Area Specification
Symbol
1.
2.
3.
4.
1.3
400
9.16
1.83
V
e
e1
2.28 BSC
4.57 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
0.025
0.035
0.100
0.040
0.050
0.115
1.02
1.27
2.92
0.090 BSC
0.180 BSC
TO-220 (IXTP) Outline
ns
A
μC
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
1.
2.
3.
4.
Gate
Drain
Source
Drain
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
6.22
2.54
14.61
2.29
1.02
1.27
8.13
BSC
15.88
2.79
1.40
1.78
.270
.100
.575
.090
.040
.050
.320
BSC
.625
.110
.055
.070
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTY1R6N50D2 IXTA1R6N50D2
IXTP1R6N50D2
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
10
1.6
VGS = 5V
3V
2V
1V
1.4
1.2
VGS = 5V
3V
9
8
2V
ID - Amperes
ID - Amperes
7
1.0
0V
0.8
-1V
0.6
6
1V
5
4
0V
3
0.4
-1V
2
-2V
0.2
1
0.0
-2V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
20
25
30
Fig. 4. Drain Current @ T J = 25ºC
Fig. 3. Output Characteristics @ T J = 125ºC
1.6
1E+00
VGS = 5V
2V
1V
1.4
VGS = - 2.25V
- 2.50V
1E-01
- 2.75V
0V
1.2
- 3.00V
1E-02
-1V
1.0
ID - Amperes
ID - Amperes
15
VDS - Volts
VDS - Volts
0.8
0.6
- 3.25V
1E-03
- 3.50V
1E-04
- 3.75V
1E-05
- 4.00V
-2V
0.4
0.2
-3V
0.0
1E-06
0
1
2
3
4
5
6
0
100
200
VDS - Volts
300
400
500
600
VDS - Volts
Fig. 5. Drain Current @ T J = 100ºC
Fig. 6. Dynamic Resistance vs. Gate Voltage
1.E+08
1.E+00
VGS = -2.50V
∆VDS = 350V - 100V
1.E+07
-2.75V
1.E-01
R O - Ohms
ID - Amperes
-3.00V
-3.25V
1.E-02
-3.50V
1.E+06
TJ = 25ºC
1.E+05
TJ = 100ºC
-3.75V
1.E-03
1.E+04
-4.00V
1.E-04
1.E+03
0
100
200
300
400
VDS - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
500
600
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
-3.0
VGS - Volts
-2.8
-2.6
-2.4
-2.2
IXTY1R6N50D2 IXTA1R6N50D2
IXTP1R6N50D2
Fig. 8. RDS(on) Normalized to ID = 0.8A Value
vs. Drain Current
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6
3.5
VGS = 0V
VGS = 0V
I D = 0.8A
3.0
R DS(on) - Normalized
R DS(on) - Normalized
2.2
1.8
1.4
1.0
5V - - - -
2.5
TJ = 125ºC
2.0
1.5
TJ = 25ºC
0.6
1.0
0.2
0.5
-50
-25
0
25
50
75
100
125
0
150
1
2
TJ - Degrees Centigrade
4
5
6
5
6
Fig. 10. Transconductance
Fig. 9. Input Admittance
6
3.5
VDS= 30V
VDS= 30V
3.0
5
2.5
g f s - Siemens
4
ID - Amperes
3
ID - Amperes
3
TJ = 125ºC
25ºC
- 40ºC
2
TJ = - 40ºC
25ºC
125ºC
2.0
1.5
1.0
1
0.5
0
-3.5
0.0
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
0
1
2
VGS - Volts
3
4
ID - Amperes
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
Fig. 12. Forward Voltage Drop of
Intrinsic Diode
1.3
5
4
1.2
VGS(off) @ VDS = 25V
IS - Amperes
BV / VGS(off) - Normalized
VGS= -10V
1.1
BVDSX @ VGS = - 5V
1.0
3
2
TJ = 125ºC
TJ = 25ºC
1
0.9
0
0.8
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.3
0.4
0.5
0.6
VSD - Volts
0.7
0.8
0.9
IXTY1R6N50D2 IXTA1R6N50D2
IXTP1R6N50D2
Fig. 13. Capacitance
Fig. 14. Gate Charge
5
10,000
VDS = 250V
4
f = 1 MHz
I D = 0.8A
Capacitance - PicoFarads
3
2
Ciss
VGS - Volts
1,000
100
I G = 10mA
Coss
1
0
-1
-2
-3
Crss
-4
-5
10
0
5
10
15
20
25
30
35
0
40
5
10
15
20
25
VDS - Volts
QG - NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area
Fig. 16. Forward-Bias Safe Operating Area
@ T C = 25ºC
@ T C = 75ºC
10.0
10.0
RDS(on) Limit
RDS(on) Limit
25µs
100µs
ID - Amperes
ID - Amperes
100µs
1ms
1.0
1.0
1ms
10ms
TJ = 150ºC
TJ = 150ºC
100ms
TC = 25ºC
Single Pulse
10ms
TC = 75ºC
Single Pulse
DC
DC
Fig. 17. Maximum Transient Thermal Impedance
0.1
10.0010
100ms
0.1
100
1,000
10
100
VDS - Volts
1,000
VDS - Volts
Fig. 17. Maximum Transient Thermal Resistance
2.00
Z(th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1R6N50D2(2C)8-14-09
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