IXYS IXTP5N50P Polarhv power mosfet - n-channel enhancement mode Datasheet

Advance Technical Information
PolarHVTM
Power MOSFET
VDSS = 500 V
= 4.8 A
ID25
RDS(on) ≤ 1.4 Ω
IXTA 5N50P
IXTP 5N50P
IXTY 5N50P
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
4.8
10
A
A
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
5
20
250
A
mJ
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 20 Ω
10
V/ns
PD
TC = 25°C
89
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Md
Mounting torque
Weight
TO-220
TO-263
TO-252
(TO-220)
VDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 50μA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
500
3.0
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
g
g
g
Characteristic Values
Min. Typ.
Max.
TJ = 125°C
G
S
(TAB)
TO-220 (IXTP)
G
(TAB)
D S
TO-252 (IXTY)
G
S
(TAB)
1.13/10 Nm/lb.in.
4
3
0.8
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
TO-263 (IXTA)
V
5.0
V
±100
nA
5
50
μA
μA
1.4
Ω
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
z
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99446(08/05)
IXTA 5N50P IXTP 5N50P
IXTY 5N50P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
3.0
4.7
S
620
pF
72
pF
C rss
6.3
pF
td(on)
18
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
18
ns
td(off)
RG = 20 Ω (External)
45
ns
16
ns
12.6
nC
4.3
nC
5.0
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
1.4 K/W
(TO-220)
0.25
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
5
A
ISM
Repetitive
15
A
VSD
IF = IS, VGS = 0 V, -di/dt = 100 A/μs
1.5
V
t rr
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
400
TO-263 (IXTA) Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
TO-220 (IXTP) Outline
ns
TO-252 (IXTY) Outline
Dim.
2,4 - Drain
Inches
Min.
Max.
A
A1
2.19
0.89
2.38
1.14
0.086
0.035
0.094
0.045
A2
b
0
0.64
0.13
0.89
0
0.025
0.005
0.035
b1
b2
0.76
5.21
1.14
5.46
0.030
0.205
0.045
0.215
c
c1
0.46
0.46
0.58
0.58
0.018
0.018
0.023
0.023
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
E
E1
6.35
4.32
6.73
5.21
0.250
0.170
0.265
0.205
e
e1
Pins: 1 - Gate
3 - Source
Millimeter
Min. Max.
2.28 BSC
4.57 BSC
Pins:
1 - Gate
3 - Source
0.090 BSC
0.180 BSC
H
L
9.40
0.51
10.42
1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
1.02
1.27
2.92
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
2,4 - Drain
IXTA 5N50P IXTP 5N50P
IXTY 5N50P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
10
5
VGS = 10V
VGS = 10V
9
7V
7V
8
4
6V
7
I D - Amperes
I D - Amperes
6V
3
2
5V
1
6
5
4
3
5V
2
1
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
V D S - Volts
18
21
24
27
30
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
@ 125ºC
3.2
5
VGS = 10V
VGS = 10V
2.8
7V
R D S ( o n ) - Normalized
4
I D - Amperes
15
V D S - Volts
Fig. 3. Output Characteristics
6V
3
2
1
5V
2.4
2
I D = 5A
1.6
I D = 2.5A
1.2
0.8
0
0.4
0
2
4
6
8
10
12
14
16
-50
18
-25
V D S - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs. ID
3.4
6.0
VGS = 10V
3
TJ = 125º C
5.0
2.6
I D - Amperes
R D S ( o n ) - Normalized
12
2.2
1.8
4.0
3.0
2.0
1.4
TJ = 25º C
1.0
1
0.6
0.0
0
1
2
3
4
5
6
I D - Amperes
© 2005 IXYS All rights reserved
7
8
9
10
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTA 5N50P IXTP 5N50P
IXTY 5N50P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
7
9
8
6
4
TJ = 125º C
3
25º C
-40º C
2
7
TJ = -40º C
6
125º C
25º C
g f s - Siemens
I D - Amperes
5
5
4
3
2
1
1
0
0
4
4.5
5
5.5
6
6.5
0
7
1
2
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
4
5
6
7
10
12
14
Fig. 10. Gate Charge
10
15
VG S - Volts
12
I S - Amperes
3
I D - Amperes
9
TJ = 125º C
6
TJ = 25º C
9
VDS = 250V
8
I D = 2.5A
7
I G = 10mA
6
5
4
3
3
2
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
0
2
4
V S D - Volts
6
8
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
100
10000
T J = 150º C
C iss
1000
C oss
100
T C = 25º C
R DS(on) Limit
I D - Amperes
Capacitance - picoFarads
f = 1MHz
10
25µs
100µs
1ms
1
C rss
10
DC
1
10ms
0.1
0
5
10
15
20
25
30
35
40
10
100
V D S - Volts
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
1000
IXTA 5N50P IXTP 5N50P
IXTY 5N50P
Fig. 13. Maximum Transient Thermal Resistance
R ( t h ) J C - ºC / W
10.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
© 2005 IXYS All rights reserved
0.1
1
10
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