IXYS IXTT28N50Q N-channel enhancement mode avalanche rated, low qg, high dv/dt Datasheet

Advanced Technical Information
VDSS
= 500 V
= 28 A
ID25
RDS(on) = 0.20 Ω
IXTH 28N50Q
IXTT 28N50Q
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
IDM
TC = 25°C, pulse width limited by TJM
IAR
EAR
28
A
112
A
TC = 25°C
28
A
TC = 25°C
40
mJ
1.5
J
10
V/ns
400
W
-55 to +150
°C
TJM
150
°C
Tstg
-55 to +150
°C
300
°C
EAS
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
TJ
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
Symbol
Test Conditions
1.13/10 Nm/lb.in.
6
4
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
VDSS
VGS = 0 V, ID = 250 µA
500
VGS(th)
VDS = VGS, ID = 250 µA
2.5
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V
4.5
V
±100
nA
TJ = 25°C
TJ = 125°C
25
1
µA
mA
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.20
Ω
© 2003 IXYS All rights reserved
TO-247 AD (IXTH)
(TAB)
TO-268 (D3) ( IXTT)
G
(TAB)
S
G = Gate
D
= Drain
S = Source TAB = Drain
Features
z
IXYS advanced low Qg process
z
Low gate charge and capacitances
- easier to drive
- faster switching
z
International standard packages
z
Low RDS (on)
z
Rated for unclamped Inductive load
switching (UIS) rated
z
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99038(04/03)
IXTH 28N50Q
IXTT 28N50Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25, pulse test
16
28
S
3300
pF
480
pF
Crss
125
pF
td(on)
17
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG
20
ns
51
ns
tf
12
ns
Qg(on)
94
nC
20
nC
42
nC
Qgs
= 2.0 Ω (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
0.31
(TO-247)
Source-Drain Diode
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
QRM
K/W
IF = IS, -di/dt = 100 A/µs, VR = 100 V
500
8.0
28
A
112
A
1.5
V
TO-247 AD (IXFH) Outline
1
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
TO-268 Outline
ns
µC
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXTH 28N50Q
IXTT 28N50Q
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
28
70
VG S = 10V
7V
21
50
6V
I D - Amperes
I D - Amperes
VG S = 10V
8V
60
14
7
5V
7V
40
30
6V
20
10
0
5V
0
0
1
2
3
4
V DS - Volts
5
6
7
0
5
Fig. 3. Output Characteristics
15
20
25
Fig. 4. RDS(on) Normalized to ID25 Value vs.
@ 125 Deg. C
Junction Temperature
28
3.1
VG S = 10V
7V
2.8
RD S (on) - Normalized
6V
21
I D - Amperes
10
V D S - Volts
14
5V
7
VG S = 10V
2.5
2.2
1.9
I D = 28A
1.6
1.3
I D = 14A
1
0.7
0
0.4
0
2
4
6
8
10
12
14
16
-50
V DS - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
3.4
30
VG S = 10V
3
25
2.6
I D - Amperes
RD S (on) - Normalized
-25
T J = 125º C
2.2
1.8
1.4
T J = 25º C
20
15
10
5
1
0
0.6
0
14
28
42
I D - Amperes
© 2003 IXYS All rights reserved
56
70
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTH 28N50Q
IXTT 28N50Q
Fig. 8. Transconductance
Fig. 7. Input Admittance
60
56
49
T J = -40º C
50
25º C
g f s - Siemens
I D - Amperes
42
35
28
T J = -40º C
21
25º C
125º C
14
125º C
40
30
20
10
7
0
0
3.5
4
4.5
5
5.5
6
6.5
0
7
14
28
V G S - Volts
Fig. 9. Source Current vs. Source-To-Drain
84
70
84
10
70
VD S = 250V
I D = 14A
I G = 10mA
8
56
VG S - Volts
I S - Amperes
56
Fig. 10. Gate Charge
Voltage
42
T J = 125º C
28
14
6
4
2
T J = 25º C
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
1.2
20
40
60
80
100
QG - nanoCoulombs
V SD - Volts
Fig. 12. Maximum Transient Thermal
Fig. 11. Capacitance
Resistance
1
10000
f = 1M Hz
C iss
1000
R(th) J C - (ºC/W)
Capacitance - p F
42
I D - Amperes
C oss
0.1
C rss
100
0.01
0
5
10
15
20
25
V DS - Volts
30
35
40
1
10
100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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