IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low RDS(on) • Very low insertion inductance (<2nH) • No beryllium oxide (BeO) or other hazardous materials • Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes • Latch-Up Protected • Low Quiescent Supply Current Advantages • Optimized for RF and high speed • Easy to mount—no insulators needed • High power density • Single package reduces size and heat sink area 1000 Volts 12 A 0.7 Ohms Applications • Class D or E Switching Amplifier • Multi MHz Switch Mode Power Supplies (SMPS) Description The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications. The IXZ4DF12N100 in pulse mode can provide 72A of peak current while producing voltage rise and fall times of less than 5ns, and minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire operating range. Designed with small internal delays, the IXZ4DF12N100 is suitable for higher power operation where combiners are used. Its features and wide safety margin in operating voltage and power make the IXZ4DF12N100 unmatched in performance and value. The IXZ4DF12N100 is packaged in DEIs low inductance RF package incorporating DEI's RF layout techniques to minimize stray lead inductances for optimum switching performance. The IXZ4DF12N100 is a surfacemountable device. Figure 1. Functional Diagram IXZ4DF12N100 RF Power MOSFET & DRIVER Device Specifications Parameter Value 150°C - 40°C to 85°C 5.5g Maximum Junction Temperature Operating Temperature Range Weight Symbol fMAX VDSS VCC, VCCIN IDSS IDM25 IDM IAR Maximum Ratings 40MHz 1000V 20V 50uA 1mA 12A 72A 12A Test Conditions ID = 0.5IDM25 VDS = 0.8VDSS VGS = 0V TJ = 25C TJ = 125C TC = 25°C TC = 25°C, Pulse limited by TJM TC = 25°C PT (MOSFET and Driver) TC = 25°C TBD 500W 0.25 °C/W TBD °C/W RthJC RthJHS Device Performance Symbol Test Condition Rds(ON) VCC = 15V, ID = 0.5IDM25 Pulse Test, t ≤ 300µS, Duty Cycle ≤ 2% Minimum IN (Signal Input) VIH (High Input Voltage) 15V VCCIN+0.3V VCCIN -2V VCCIN+0.3V f = 1MHz 7960 Ω Cstray f = 1MHz Any one pin to the back plane metal 46pf COSS VGS = 0V, VDS = 0.8VDSS(max) , f =1MHz 150pf ZIN tONDLY tOFFDLY tR tF TC = 25°C VCC, VCCIN , VIN = 15V 1µS Pulse, VDS= 50V, RL = 2.5Ω TC = 25°C VCC, VCCIN, VIN = 15V 1µS Pulse, VDS = 50V, RL = 2.5Ω 20V - 5V 0.8V VIL (Low Input Voltage) Maximum 0.7 Ω 8V VCC, VCCIN Typical 20nS 22.6nS 3nS 4.5nS IXZ4DF12N100 RF Power MOSFET & DRIVER Fig. 2 Fig. 3 R DS(ON) vs. Temperature ID = 0.5IDM Extended Output Characteristics @ 25°C 2.5 50 V GS = V CC = 15V and 20V 2 R DS(ON) (Ohms) ID (A) 40 30 V GS = V CC = 8V 20 10 1.5 1 0.5 0 0 0 50 100 150 20 70 V DS (V) Fig. 4 120 170 Temperature (C) Fig. 5 Propagation Delay ON vs . Supply Voltage ID = 0.5IDM Propagation Delay OFF vs. Supply Voltage 28.5 25 Time (nS) Time (nS) 23 21 19 28 17 27.5 15 5 10 15 20 5 25 15 20 25 VCC / VCCIN / IN (V) V CC / V CCIN / IN (V) Fig. 6 10 Fig. 7 Propagation Delay ON vs.Temperature ID = 0.5 IDM, V CC / V CCIN / IN = 15V Propagation Delay OFF vs. Temperature ID = 0.5 IDM , VCC / VCCIN / IN = 15V 33 19 32 18.5 Time (nS) Time (nS) 31 18 17.5 17 30 29 28 27 16.5 26 16 25 20 70 120 Temperature (°C) 170 20 70 120 Temperature °C 170 IXZ4DF12N100 RF Power MOSFET & DRIVER Fig. 9 Rise Time vs. Supply Voltage ID = 0.5 IDM Fall Time vs. Supply Voltage ID = 0.5 IDM 4.5 8 4 7 3.5 6 Time (nS) Time (nS) Fig. 8 3 2.5 5 4 2 3 1.5 2 5 10 15 20 5 25 10 25 Fall Time vs. Temperature ID = 0.5 IDM , VCC / VCCIN / IN = 15V Fig. 11 Rise Time vs. Temperature ID = 0.5 IDM , VCC / VCCIN / IN = 15V 2.5 3 2.4 2.5 Time (nS) Time (nS) 20 VCC / VCCIN / IN (V) VCC / VCCIN / IN (V) Fig. 10 15 2.3 2.2 2 1.5 2.1 1 2 20 70 120 20 170 70 VCC Supply Current vs. Frequency Driver Section Fig. 13 Output Capacitance vs. V DS Voltage 10 VCC Current (A) 10,000 C a p a c ita n c e (p F ) 170 Temperature (°C) Temperature (°C) Fig. 12 120 1,000 100 10 0 100 200 300 400 500 600 V DS (V) 700 800 900 1000 20V 15V 8 V 1 0.1 0.01 0 10 20 30 Frequency (MHz) 40 50 IXZ4DF12N100 RF Power MOSFET & DRIVER Fig. 14 V CCIN Supply Current vs. Frequency Driver Section VCCIN Current (A) 10 20V 15V 1 8V 0.1 0.01 0.001 0 10 20 30 40 50 Frequency (MHz) Test Circuit Fig. 15 VDD 4.7UF 0.01u 0.01u 0.01u 0.01u 0.47u 0.47u + VCC + + 4.7UF 10UF 100V VCC Source DGND INVCC IN IN Drain INGND L1 5 ohm 20W CM Choke VCC + 4.7UF VCC 0.01u 0.01u 0.01u 0.01u .01uF Source 2 4.7UF 1 DGND + 0.47u 0.47u Place all capacitors on VCC as close to the VCC lead as possible IXZ4DF12N100 RF Power MOSFET & DRIVER Lead Description SYMBOL Drain Source FUNCTION MOSFET Drain Drain of Power MOSFET. MOSFET Source DESCRIPTION Source of Power MOSFET. This connection is common to DGND. VCC Power supply input for the driver output section. These leads provide power to the output Driver Section section of the DEIC515 driver. Both leads must be connected. Supply Voltage VCCIN Input for the positive input section power-supply voltage. This lead provides power to the Input Section input section of the DEIC515 driver. This lead should not be directly connected to VCC. Supply Voltage Input signal. IN Input DGND Power Driver Ground The system ground leads. Internally connected to all circuitry, these leads provide ground reference for the entire chip. These leads should be connected to a low noise analog ground plane for optimum performance. INGND Input Section Ground The input section ground lead. This lead is a Kelvin connection internally connected to DGND. This lead must not be connected to DGND as excessive current can damage this lead. IXYS RF reserves the right to change limits, test conditions and dimensions without notice. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002 IXZ4DF12N100 RF Power MOSFET & DRIVER Fig. 16 IXZ4DF12N100 Package Outline IXYS RF An IXYS Company 2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526 Tel: 970-493-1901; Fax: 970-493-1903 e-mail: [email protected]