NJSEMI J270 J270 - j271 /sst270 - sst271 Datasheet

£/-\oaue£i, Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
J270 - J271 /SST270 - SST271
FEATURES
DESCRIPTION
• Surface Mount
The J270/SST270 Series is an all-purpose amplifier for
designs requiring P-channel operation. These devices feature
high gain, low noise and tight VGS(OFF) limits for simple circuit
design. They are available in low-cost SOT-23 and TO-92
packages and are fully compatible with automatic insertion
techniques.
APPLICATIONS
• P-Channel Amplifier
ORDERING INFORMATION
Part
Package
J270-271
SST270-271
Plastic TO-92
Plastic SOT-23
Temperature Range
-55°Cto+135°C
-55°Cto+135°C
PIN CONFIGURATION
SOT-23
TO-92
1 GATE
2 SOURCE
3 DRAIN
1 DRAIN
2 GATE
3 SOURCE
TOP VIEW
BOTTOM VIEW
PRODUCT MARKING (SOT-23)
SST270
P20
SST271
P21
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
J270 - J271 /SST270 - SST271
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMIT
UNIT
VGD
VGS
Ic
Pr,
30
V
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Power Dissipation
Power Derating
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
30
-50
V
mA
mW
350
2.8
-55 to 150
-55 to 150
300
Tj
Tstg
TL
mW/°C
°C
°C
°c
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
271
270
SYMBOL
PARAMETER
TYP1
UNIT
MIN
MAX
MIN
TEST CONDITIONS
MAX
STATIC
V(BR)GSS
Gate-Source Breakdown Voltage
45
30
30
V
VGS<OFF)
Gate-Source Cutoff Voltage
loss
Saturation Drain Current 2
loss
Gate Reverse Current
Gate Operating Current
VGS<F)
Gate-Source Forward Voltage
0V
V D s = -15V, ID = -1nA
0.5
2.0
1.5
4.5
-2
-15
-6
-50
mA
Vos = -15V, VGS = OV
200
PA
VGS = 20V, VDS = 0V
5
nA
T A =125°C
10
pA
VDG = -15V, ID = -1mA
-0.7
V
IG = -1rnA, VDS = OV
10
IG
lG = 1|lA,VDS =
200
DYNAMIC
gfs
Common-Source Forward
Transconductance
9os
Common-Source Output
Conductance
Ciss
Common-Source Input Capacitance
Crss
Common-Source Reverse
Transfer Capacitance
en
Equivalent Input Noise Voltage
NOTES:
6
15
8
18
mS
VDS = -1 5V, VG 3 = 0V
f = 1kHz
200
500
uS
20
PF
4
20
1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300us, duty cycle < 3%.
nV
VJHz"
VDS ~ -1 5V VG 3 = OV
f = 1MHz
VDS = -10V, VGS = OV
f = 1kHz
Similar pages