Microsemi JAN2N3764 Pnp switching silicon transistor Datasheet

TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/396
Devices
2N3762
2N3762L
Qualified Level
2N3763
2N3763L
2N3764
JAN
JANTX
JANTXV
2N3765
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
2N3762*
2N3764
2N3763*
2N3765
40
40
60
60
VCEO
VCBO
VEBO
IC
Total Power Dissipation @ TA = +250C
Operating & Storage Junction Temp. Range
THERMAL CHARACTERISTICS
Characteristics
5.0
1.5
2N3762* 1
2N3763*
2N3764 2
2N3765
1.0
0.5
PT
Symbol
TO-39* (TO-205AD)
2N3762, 2N3763
W
C
Max.
2N3762*
2N3763*
Vdc
Vdc
Vdc
Adc
0
-55 to +200
Top, Tstg
Unit
TO-5*
2N3762L, 2N3763L
Unit
2N3764
2N3765
0
Thermal Resistance Junction-to-Case
60
88
C/W
RθJC
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly at 5.71 mW/0C for TA > +250C
2) Derate linearly at 2.86 mW/0C for TA > +250C
TO-46* (TO-206AB)
2N3764, 2N3765
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
V(BR)CEO
40
60
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 20 Vdc
VCB = 30 Vdc
VCB = 40 Vdc
VCB = 60 Vdc
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
ICBO
Vdc
100
100
10
10
ηAdc
µAdc
120101
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2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Emitter Cutoff Current
VEB = 2.0 Vdc, VCE = 20 Vdc
VEB = 2.0 Vdc, VCE = 30 Vdc
Emitter-Base Cutoff Current
VEB = 2.0 Vdc
VEB = 5.0 Vdc
Symbol
2N3762, 2N3764
2N3763, 2N3765
All Types
2N3762, 2N3764
2N3763, 2N3765
Min.
Max.
Unit
ICEX
100
100
ηAdc
IEBO
200
10
10
ηAdc
µAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 1.0 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc
IC = 1.5 Adc, VCE = 5.0 Vdc
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 150 m Adc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 150 m Adc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
hFE
35
40
40
30
20
30
20
140
120
80
0.1
0.22
0.5
0.9
Vdc
Vdc
0.9
0.8
1.0
1.2
1.4
1.8
1.5
6.0
6.0
VCE(sat)
VBE(sat)
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz
2N3762, 2N3764
2N3763, 2N3765
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
Cobo
25
pF
Cibo
80
pF
8.0
35
80
35
ηs
ηs
ηs
ηs
SWITCHING CHARACTERISTICS
Delay Time
VCC = 30 Vdc, VEB = 0,
Rise Time
IC = 1.0 mAdc, IB1 = 100 mAdc
Storage Time
VCC = 30 Vdc, VEB = 0,
Fall Time
IC = 1.0 mAdc, IB1 = 100 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
t
d
r
t
s
t
f
t
120101
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