Microsemi JAN2N3767 Npn power silicon transistor Datasheet

TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices
Qualified Level
2N3766
JAN
JANTX
JANTXV
2N3767
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +250C (1)
Operating & Storage Temperature Range
Symbol
2N3766
2N3767
Units
VCEO
VCBO
VEBO
IB
IC
PT
60
80
80
100
Vdc
Vdc
Vdc
Adc
Adc
W
Top, Tstg
6.0
2.0
4.0
25
-65 to +200
0
C
TO-66*
(TO-213AA)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C
Max.
7.0
Unit
0
C/W
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N3766
2N3767
V(BR)CEO
60
80
2N3766
2N3767
ICEO
500
500
µAdc
2N3766
2N3767
ICEX
10
10
µAdc
2N3766
2N3767
ICBO
10
10
µAdc
IEBO
500
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
VCE = 80 Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 1.5 Vdc
VCE = 100 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
VCB = 80 Vdc
VCB = 100 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
µAdc
120101
Page 1 of 2
2N3766, 2N3767 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
hFE
30
40
20
160
Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 5.0 Vdc
IC = 500 mAdc, VCE = 5.0 Vdc
IC = 1.0 Adc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 0.5 Adc, IB = 0.05 Adc
Base-Emitter Voltage
IC = 1.0 Adc, VCE = 10 Vdc
VCE(sat)
2.5
1.0
Vdc
VBE(on)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 mAdc, VCE = 10 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1.0 MHz
hfe
1.0
8.0
50
pF
on
0.25
µs
off
2.5
µs
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 0.5 Adc; IB = 0.05 Adc
Turn-Off Time
VCC = 30 Vdc; IC = 0.5 Adc; IB = IB = 0.05 Adc
t
t
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 6.25 Vdc, IC = 4.0 Adc
Test 2
VCE = 20 Vdc, IC = 1.25 Adc
Test 3
VCE = 50 Vdc, IC = 150 mAdc
2N3766
VCE = 65 Vdc, IC = 150 mAdc
2N3767
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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