Microsemi JANTX2N5039 Npn high power silicon transistor Datasheet

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439
Devices
Qualified Level
2N5038
JAN
JANTX
JANTXV
2N5039
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ TC = +250C (1)
Operating & Storage Temperature Range
Symbol
2N5038
2N5039
Units
VCEO
VCBO
VEBO
IB
IC
PT
90
150
75
125
Vdc
Vdc
Vdc
Adc
Adc
W
Top, Tstg
7.0
5.0
20
140
0
-65 to +200
C
TO-3*
(TO-204AA)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 800 mW/0C for TC > +250C
Max.
1.25
Unit
C/W
0
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
V(BR)CEO
90
75
Vdc
V(BR)EBO
7.0
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Emitter-Base Breakdown Voltage
IE = 25 mAdc
Collector-Base Cutoff Current
VCE = 150 Vdc
VCE = 125 Vdc
Collector-Base Cutoff Current
VCE = 70 Vdc
VCE = 55 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VBE = -1.5 Vdc VCE = 100 Vdc
VBE = -1.5 Vdc VCE = 85 Vdc
2N5038
2N5039
2N5038
2N5039
ICBO
1.0
1.0
µAdc
2N5038
2N5039
ICEO
1.0
1.0
µAdc
IEBO
1.0
µAdc
ICEX
5.0
5.0
µAdc
2N5038
2N5039
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N5038, 2N5039, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
50
30
50
30
15
15
200
150
Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 5.0 Vdc
IC = 2.0 Adc, VCE = 5.0 Vdc
IC = 12 Adc, VCE = 5.0 Vdc
IC = 10 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 12 Adc, IB = 1.2 Adc
IC = 10 Adc, IB = 1.0 Adc
IC = 20 Adc, IB = 5.0 Adc
Base-Emitter Saturation Voltage
IC = 20 Adc, IB = 5.0 Adc
Base-Emitter Voltage
IC = 12 Adc, VCE = 5.0 Vdc
IC = 10 Adc, VCE = 5.0 Vdc
2N5038
2N5039
2N5038
2N5039
2N5038
2N5039
2N5038
2N5039
Both
2N5038
2N5039
hFE
VCE(sat)
1.0
1.0
2.5
VBE(sat)
3.3
VBE
1.8
1.8
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hFE
12
48
500
pF
on
0.5
µs
off
2.0
µs
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 ± 2 Vdc; IC = 12 Adc; IB1= 1.2 Adc
VCC = 30 ± 2 Vdc; IC = 10 Adc; IB1= 1.0 Adc
Turn-Off Time
VCC = 30 ± 2 Vdc; IC = 12 Adc; IB1 = -IB2 = 1.2 Adc
VCC = 30 ± 2 Vdc; IC = 10 Adc; IB1 = -IB2 = 1.0 Adc
2N5038
2N5039
t
2N5038
2N5039
t
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 28 Vdc, IC = 5.0 Adc
Test 2
VCE = 45 Vdc, IC = 0.9 Adc
Test 3
VCE = 7.0 Vdc, IC = 20 Adc
Test 4
VCE = 90 Vdc, IC = 0.23 Adc
2N5038
Test 4
VCE = 75 Vdc, IC = 0.32 Adc
2N5039
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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