IRF JANTXV1N6844U3 Schottky rectifier high efficiency sery Datasheet

PD-91855B
15LJQ100
JANS1N6844U3
JANTX1N6844U3
JANTXV1N6844U3
15A, 100V
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
REF: MIL-PRF-19500/679
Major Ratings and Characteristics
Description/Features
Characteristics
Limits
IF(AV) Rectangular Waveform
15
A
VRRM
100
V
IFSM @tp = 8.3ms half-sine
250
A
VF @15Apk, TJ =125°C
0.72
V
The1N6844U3 Schottky rectifier has been expressly
designed to meet the rigorous requirements of Hirel
environments. It is packaged in the hermetic surface
mount SMD-0.5 ceramic package. The device's
forward voltage drop and reverse leakage current are
optimized for the lowest power loss and the highest
circuit efficiency for typical high frequency switching
power supplies and resonent power converters. Full
MIL-PRF-19500 quality conformance testing is available
on source controlled drawings to S, TX and TXV levels.
TJ, Tstg Operating and Storage -65 to 150
Units
°C
• Hermetically Sealed
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long Term
Reliability
• Surface Mount
• Lightweight
CASE STYLE
( ISOLATED BASE )
CATHODE ANODE ANODE
Case Outline and Dimensions - SMD-0.5
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09/08/05
15LJQ100, 1N6844U3
Voltage Ratings
Part number
VR
VRWM
1N6844U3
Max. DC Reverse Voltage (V)
100
Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
Limits
Units
15
A
50% duty cycle @ TC = 125°C, rectangular waveform
Conditions
250
A
@ t p = 8.3 ms half-sine
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
Electrical Specifications
Parameters
V FM
Limits
Units
Max. Forward Voltage Drop
0.70
V
Conditions
See Fig. 1
0.90
V
@ 15A
1.0
V
@ 20A
@ 5.0A
0.58
V
@ 5.0A
0.72
V
@ 15A
TJ = 25°C
TJ =1 25°C
0.85
V
@ 5.0A
TJ = -55°C
Max. Reverse Leakage Current
50
µA
TJ = 25°C
VR = rated VR
See Fig. 2 
10
mA
TJ = 125°C
CT
Max. Junction Capacitance
600
pF
VR = 5VDC ( 1MHz, 25°C )
LS
Typical Series Inductance
4.8
nH
I RM
Measured from center of cathode pad to center of
anode pad
Thermal-Mechanical Specifications
Parameters
Limits Units
TJ
Max.Junction Temperature Range
-65 to 150
Tstg
Max. Storage Temperature Range
-65 to 150
°C
2.0
°C/W
RthJC Max. Thermal Resistance, Junction
Conditions
°C
DC operation
See Fig. 4
to Case
wt
Weight (Typical)
Die Size
Case Style
1.0
g
125X125
mils
SMD-0.5
 Pulse Width < 300µs, Duty Cycle < 2%
2
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15LJQ100, 1N6844U3
Reverse Current - I R (mA)
1000
100
100
TJ = 175°C
10
150°C
1
125°C
0.1
75°C
0.01
50°C
0.001
25°C
A
0.0001
0
20
40
60
80
100
10
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
TJ = 150°C
TJ = 125°C
TJ = 25°C
TJ = -55°C
T
(pF)
1000
1
Junction Capacitance - C
Instantaneous Forward Current - I F (A)
Reverse Voltage - V R (V)
0.1
0.0
0.5
1.0
1.5
Forward Voltage Drop - V FM (V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
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TJ = 25°C
A
100
0
20
40
60
80
100
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
3
15LJQ100, 1N6844U3
Thermal Response ( Z thJC )
10
1
D = 0.5
D = 0.4
D = 0.3
D = 0.2
D = 0.1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
Allowable Case Temperature - (°C)
160
R thJC (DC) = 2°C/W
140
DC
120
Square Wave (D=0.50)
80% Rated VR applied
100
80
60
40
20
0
0
5
10
15
20
25
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/05
4
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